• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.150-156
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• 2009

Plasma Display Panels(PDPs) require to have improved luminous efficiency, low manufacturing cost, and high image quality to compete with other flat display devices such as Liquid Crystal Displays(LCDs) and organic light-emitting diodes(OLEDs). In addition, the diversity of product line-up may be needed for high market share. In this paper, the optical characteristics of typical green phosphor for PDP application are reviewed and the problem-based solution will be proposed. We also shortly describe the principle of 3D-PDPs which are promising. Then, the requirement of green phosphor for 3D-PDP application is summarized and research achievement, as of now, is described. The typical problems of $Zn_2SiO_4:Mn$ phosphor, which is the most well-known, are the negatively charged surface property and the long decay time, which leads to unstable discharge in green cell and afterimage. These problems were solved by coating the phosphor surface with metallic oxide. It was found that $Al_2O_3$ would be the best material for $Zn_2SiO_4:Mn$ phosphor. It gives longevity as well as low operating voltage due to the charging effect in green cells. Also, new phosphors, $(Y,\;Gd)Al_3(BO_3)_4:Tb$ and $(Mg,\;Zn)Al_2O_4:Mn$ phosphor are proposed for increasing the luminance and reducing the decay time, which are capable to apply for 3D-PDP application.

• Management & Information Systems Review
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• v.37 no.2
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• pp.63-85
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• 2018

Electronic displays have developed as instruments that function as windows of information to satisfy the bidirectional needs of electronic device manufacturers and users. The cathode-ray tube (CRT) display once dominated the display industry. Now, the liquid crystal display (LCD) is dominant, and promising displays are competing to become the next-generation display. Displays reflect the characteristics of the information and communication technology (ICT) industries, such as technological changes, innovative features, and competitive dynamics, and have technologically evolved to dominate the industry and market through various ICT devices. This research utilizes a dominant design concept and examines the case of the flat-panel display industry to propose a comprehensive framework, which considers technological, organizational, and environmental characteristics, of the determinants influencing dominance in the technology-intensive ICT industry. The results show that a dominant design in the flat-panel display industry emerges from technological competition among several designs, based on technological characteristics and market acceptance, and dominates the industry and market by various environmental factors. Our results emphasize the difference between generic technologies and the speed of technological innovation and expand the understanding of the emergence of a dominant design. Furthermore, this paper suggests practical implications for establishing a competition strategy and strategic guidance for other ICT industries as well as the display industry.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.272-279
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• 2015

$Y_2O_3:Eu^{3+}$ is an excellent red-emitting phosphor, which has been widely used for display devices due to highly luminescent property and chemical stability. In this study, $Y_2O_3:Eu^{3+}$ red phosphors were prepared using the solid state reaction and RF thermal plasma synthesis. The particle size of $Y_2O_3:Eu^{3+}$ phosphors obtained by the solid state reaction varied from 10 to $20{\mu}m$, and 30~100 nanometer sized $Y_2O_3:Eu^{3+}$ particles were obtained from a liquid form of raw material through RF thermal plasma synthesis without an additional heat treatment. Photoluminescence measurements of the obtained $Y_2O_3:Eu^{3+}$ particles showed a red emission peak at 611 nm ($^5D_0{\rightarrow}^7F_2$). PL intensity of red nano phosphors prepared by RF thermal plasma synthesis was comparable to that of red phosphors prepared by the solid state reaction, indicating that nano-sized $Y_2O_3:Eu^{3+}$ red phosphors could be successfully synthesized using one-step process of RF thermal plasma.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.344-349
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• 2015

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.116.1-116.1
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• 2011

Materials with a combination of high electrical conductivity and optical transparency are important components of many electronic and optoelectronic devices such as liquid crystal displays, solar cells, and light emitting diodes. In this study, to fabricate a low-resistance and high optical transparent electrode film for organic photovoltaic, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of thermal roll imprinted (TRI) poly-carbonate (PC) patterned films, the manufacture of high-conductivity and low-resistance Ag paste which was filled into patterned PC film using a doctor blade process and then coated with a thin film layer of conductive polymer by a spin coating process. As a result of these imprinting processes the PC films obtained a line width of $10{\pm}0.5{\mu}m$, a channel length of $500{\pm}2{\mu}m$, and a pattern depth of $7.34{\pm}0.5{\mu}m$. After the Ag paste was used to fill part of the patterned film with conductive polymer coating, the following parameters were obtained: a sheet resistance of $9.65{\Omega}$/sq, optical transparency values were 83.69 % at a wavelength of 550 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.529-529
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• 2006

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.12
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• pp.5998-6016
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• 2017

In thin-film transistor liquid-crystal displays (TFT-LCDs), which are most commonly used in mobile devices, the backlight accounts for about 70% of the power consumption. Therefore, most low-power-related studies focus on realizing power savings through backlight dimming. Image compensation is performed to mitigate the visual distortion caused by the backlight dimming. Therefore, popular techniques include pixel compensation for brightness recovery and contrast enhancement, such as histogram equalization. However, existing pixel compensation techniques often have limitations with respect to blur owing to the pixel saturation phenomenon, or because contrast enhancement cannot adequately satisfy the human visual system (HVS). To overcome these, in this study, we propose a novel dimming technique to achieve both power saving and HVS-awareness by combining the pixel compensation and histogram specifications, which convert the original cumulative density function (CDF) by designing and using the desired CDF of an image. Because the process of obtaining the desired CDF is customized to consider image characteristics, histogram specification is found to achieve better HVS-awareness than histogram equalization. For the experiments, we employ the LIVE image database, and we use the structural similarity (SSIM) index to measure the degree of visual satisfaction. The experimental results show that the proposed technique achieves up to 15.9% increase in the SSIM index compared with existing dimming techniques that use pixel compensation and histogram equalization in the case of the same low-power ratio. Further, the results indicate that it achieves improved HVS-awareness and increased power saving concurrently compared with previous techniques.