• Proceedings of the KIEE Conference
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• 2004.11d
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• pp.93-96
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• 2004

In this paper, we analyzed the current limiting characteristics according to increase of source voltage in the flux-lock type high-Tc superconducting fault current limiter (SFCL). The flux-lock type SFCL consisted of two coils, which were wound in parallel each other through an iron core, and high-Tc superconducting (HTSC) element connected with coil 2 in series. The flux-lock type SFCL has the characteristics better in comparison with the resistive type SFCL because the fault current in the flux-lock type SFCL can be divided into two coils by the inductance ratio of coil 1 and coil 2. The fault current limiting operation of the flux-lock type SFCL can be different due to winding direction of the two coils. The winding method where the decrease of linkage flux between two coils in the accident happens is called the subtractive polarity winding and the winding method in case of the increase of linkage flux is called the additive polarity winding. The fault current limiting experiments according to the source voltage were performed for these two winding methods. Through the comparison and the analysis of the experimental data, we confirmed that the quench time was shorter, irrespective of the winding direction as the source voltage increased and that the fault current and the HTSC's resistance increased as the amplitude of the source voltage increased. The additive polarity winding made the fast quench time and the lower resistance of HTSC element in comparison with the subtractive polarity winding. The fault current of the subtractive polarity winding was larger than that of the additive polarity winding. In conclusion, we found that the additive polarity winding reduced the burden of SFCL because the quench time was shorter and the fault current was smaller than those of the subtractive polarity winding.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.5
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• pp.717-722
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• 2016

In this paper, in order to support the peak current limiting function depending on the intensity of the fault current at the early stage of failure, a two magnetically coupled type superconducting fault current limiter (SFCL) is proposed, which includes high-Tc superconducting (HTSC) element 1, where the existing primary and secondary coils are connected to one iron core in parallel, and HTSC element 2, which is connected to the tertiary winding using an additional iron core. The results of the experiments in this study confirmed that the two magnetic coupling type SFCL having coil 1 and coil 2 connected in parallel using dual iron cores is capable of having only HTSC element 1 support the burden of the peak current when a failure occurs. The reason for this is that although HTSC element 1 was quenched and malfunctioned because the instantaneous factor of the initial fault current was large, the current flowing to coil 3 did not exceed the critical current, which would otherwise cause HTSC element 2 to be quenched and not function. In order to limit the peak current upon fault through the sequential HTSC elements, the design should allow it to have the same value as the low value of coil 1 while having coil 3 possess a higher self-inductance value than coil 2. In addition, a short-circuit simulation experiment was conducted to examine and validate the current limiting and recovery characteristics of the SFCL when the winding ratio between coil 1 and coil 2 was 0.25. Through the analysis of the short-circuit tests, the current limiting and recovery characteristics in the case of the additive polarity winding was confirmed to be superior to that of the subtractive polarity winding.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.66-69
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• 2009

To manufacture YBCO-coated conductors as superconducting fault current limiters, it is important to conduct researches on their durability. To test their durability, it is necessary to investigate their properties before and after the quench in more severe conditions than in general operating conditions. In this study, their voltage-current and resistance properties were measured before and after a fault current was repetitively applied to them. For the applied voltage, the voltage grades of the YBCO coated conductors were considered. The current amplitude was controlled using protective resistance on an experimental track, and the time and number of applications were fixed to produce the quench occurrence at the fault angles of $0^{\circ}$, $45^{\circ}$, and $90^{\circ}$. The operating conditions of the YBCO coated conductors as the main components of superconducting fault current limiters were determined using their voltage properties. The voltage properties of the YBCO coated conductors that were analyzed in this research will be used as important data for their practical application to superconducting fault current limiters.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.162-162
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• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.753-758
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• 2005

A flux-lock type superconducting fault current limiter(SFCL) consists of two coils, which are wound in parallel each other through an iron core, and a high-$T_c$ Superconducting(HTSC) thin film connected in series with coil 2. If the current of the HTSC thin film exceeds its critical current by the fault accident, the resistance of the HTSC thin film generated, and thereby the fault current can be limited by the impedance of the fluk-lock type SFCL. In this paper, we investigated the dependence of both the fault current limiting characteristics and the current distribution between two coils on the operational current of the flux-lock type SFCL through the equivalent circuit analyses and short circuit tests. From the comparison of both the results, the experimental results well agreed with the analyses for equivalent circuit.

• Proceedings of the KIEE Conference
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• 2006.10b
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• pp.208-211
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• 2006

We have analyzed operating characteristics of hybrid-type superconducting fault current limiter (SFCL) according to the parallel connection of secondary windings with $YBa_{2}Cu_{3}O_{7}$ (YBCO) films. The turn ratio between the primary and secondary windings of each reactor was 63:21. Hybrid-type SFCL using a transformer with parallel reactors could reduce the unbalanced quench caused by differences of the critical current density between YBCO films. We found that hybrid-type SFCL having parallel connection induced simultaneous quench between the superconducting elements. The quench-starting point at this time was almost same. When the applied voltage was 200V, the limiting current in the hybrid-type SFCL with a serial connection was lowered to 34 percent than that in the SFCL with a parallel connection. In the meantime, when the voltage generated in the superconducting elements was the same, the current value in the parallel connection was 60 percent less than in the serial connection. The voltage generated in the primary winding also showed the similar behavior. In conclusion, we found that the fault current was limited more effectively in the SFCL with the serial connection but the power burden of the superconducting elements was reduced in the parallel connection.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.200-202
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• 2006

We investigated the operating characteristics of a flux-lock type superconducting fault current limiters according to the number of the serial connection each the superconducting element at the additive polarity winding of a transformer. This SFCL consists of two coils wound in parallel on the same iron core, and the secondary coil is connected to the elements in series. Operating characteristics can be controlled by adjusting the inductances and the winding directions of the coils. It turns ratio between the primary and the secondary coils is 63:21. The analysis of voltage, current, and resistance in serial connection each element was performed to increase the applied voltage of flux-lock type SFCL. When the applied voltage was 200/$\sqrt{3}[V_{rms}]$ with three elements connected in seres, the peak value of the line current increased up to 26,24[A]. On the other hands, resistive SFCL increased up to 36.35[A], under the same conditions. This enabled the flux-lock type SFCL to be easy to increase the capacity of power system.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.393-395
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• 2006

We investigated the operational characteristics of the hybrid-type superconducting fault current limiter (SFCL) according to the serial and parallel connections of secondary circuits. The hybrid-type SFCL consists of a transformer, which has a primary winding and several secondary windings with $YBa_2Cu_3O_7$ films connected in series and parallel. In order to increase the capacity of the SFCL, the serial connection between each current limiting unit is necessary. The hybrid-type SFCL with the serial connection in secondary circuits could show superior characteristics than those of the parallel connections in the current limiting and quench time. The resistances generated in the superconducting units were also lowered at the parallel connections. We confirmed that the parallel connection reduced the power burden of each superconducting unit under the same conditions because of the simultaneous quenching between superconducting units.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.2
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• pp.35-40
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• 1983

The bit error probability of PCM/FM system was derived and numerically calculated. Binary NRZ-L baseband signal was premodulation filtered to frequency modulate a sinusoidal carrier, and a common circuit of limiter-discriminator was employed as a detector. Considering both RF spectrum limitation and bit error Probability reduction, it was found that h ≒ 3WT would be reasonable, where h is the frequency deviation ratio, W is the bandwidth of a premodulation filter and T is the time interval of one bit.