• Title/Summary/Keyword: light-induced degradation

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Study of High-efficiency and Long-lived Blue - Green Light Emitting Diodes Using ZnSSe:Te System Grown by MBE (ZnSSe:Te계 청 -녹색 발광다이오드의 고효율화 및 장수명화에 관한 연구)

  • 이홍찬;이상태;이성근;김윤식
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2002.05a
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    • pp.167-171
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    • 2002
  • We have investigated the optical properties of Te-doped ZnSSe:Te epitaxial layers grown on (100) GaAs substrates by molecular beam epitaxy. The Te-doped ternary specimen shows strong blue or green emission (at 300k) which is assigned to Te$_{1}$ or Te$_{n}$( n$\geq$2) cluster bound exciton. Bright green and blue light-emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 A/cm$^{2}$ under CW condition at room temperature. It is confirmed that the Te-doping induced "crystal-hardening effect" plays a significant role in both efficient and strong suppression of the optical device degradation.gradation.

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Preparation of Highly Visible-Light Photocatalytic Active N-Doped TiO2 Microcuboids

  • Zhao, Kang;Wu, Zhiming;Tang, Rong;Jiang, Yadong
    • Journal of the Korean Chemical Society
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    • v.57 no.4
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    • pp.489-492
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    • 2013
  • N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

Ultrastructural Study of Rat Skin Tumor Induced by 7, 12-Dimethylbenz[a]anthracene(DMBA) (7, 12-Dimethylbenz[a]anthracene(DMBA)에 의해 유발된 백서 피부종양의 미세구조적 연구)

  • Deung, Young-Kun;Kim, Wan-Jong;Park, Kwang-Kyun
    • Applied Microscopy
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    • v.20 no.2
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    • pp.102-116
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    • 1990
  • To investigate the ultrastructural features of rat back skin tumor induced by 7, 12-Dimethylbenz[a]anthracene(DMBA), morphological changes during carcinogenesis were undertaken by the light and the electron microscopes. On the light microscopic levels, dysplasia was observed at the 6th week of treatment with 0.5% DMBA, hyperplasia at the 8th week, and carcinoma in sitv or invasive carcinoma at the 12th week. In addition to those characteristics, papillomatosis was observed at the 18th week. Under the electron microscopy, intercellular spaces were enlarged in the early phase. Nucleolar enlargement, the increase of free ribosomes, the condensation of tonofibrils, and the irregular arrangement of desmosomes appeared at the 6th week of application. Thereafter, the degradation of desmosomes and the discontinuity of basal lamina were characterized. And then, epidermal cell processes were protruded toward the connective tissue at the site of discontinuity of basal lamina at the 12th week. At the 14th to 18th week, DMBA-induced fibrosarcomas or papillomas were observed.

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Analysis of Visible Light Communication Module Degraded by High Dose-Rate Gamma Irradiation using Thermal Infrared Image (적외선 열영상을 이용한 가시광 통신모듈의 고선량 감마선조사에 따른 열화 분석)

  • Cho, Jai-Wan;Hong, Seok-Boong;Koo, In-Soo
    • Journal of Institute of Control, Robotics and Systems
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    • v.17 no.12
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    • pp.1203-1209
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    • 2011
  • In this paper, the degradation evaluation method of VLC (Visible Light Communication) wireless module after high dose rate gamma-ray irradiation using the thermal infrared camera is proposed. First, the heating characteristics of the active devices embedded in the VLC wireless module during the condition of normal operation is monitored by thermal infrared camera. By the image processing technique, the trends of the intensity of the heat emitted by the active devices are calculated and stored. The feature of the blob area including the area of the active devices in the thermal infrared image is extracted and stored. The feature used in this paper is the mean value of the gray levels in the blob area. The same VLC module has been gamma irradiated at the dose rate of about 4.0 kGy/h during 72 hours up to a total dose of 288 kGy. And then, the heating characteristics of the active devices embedded in the VLC wireless module after high dose gamma ray irradiation is observed by thermal infrared camera. The high dose gamma-ray induced degradation of the active devices embedded in the VLC module was evaluated by comparing the mean value of the blob area to the one of the same blob area of the VLC module before the gamma ray irradiation.

A Study of Moth-eye Nano Structure Embedded Optical Film with Mitigated Output Power Loss in PERC Photovoltaic Modules (PERC 태양전지 모듈의 출력저하 방지를 위한 모스아이(Moth-eye) 광학필름 연구)

  • Oh, Kyoung-suk;Park, Jiwon;Choi, Jin-Young;Chan, Sung-il
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.55-60
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    • 2020
  • The PERC photovoltaic (PV) modules installed in PV power plant are still reports potential-induced degradation (PID) degradation due to high voltage potential differences. This is because Na+ ions in the cover glass of PV modules go through the encapsulant (EVA) and transferred to the surface of solar cells. As positive charges are accumulated at the ARC (SiOx/SiNx) interface where many defects are distributed, shunt-resistance (Rsh) is reduced. As a result, the leakage current is increased, and decrease in solar cell's power output. In this study, to prevent of this phenomenon, a Moth-eye nanostructure was deposited on the rear surface of an optical film using Nano-Imprint Lithography method, and a solar mini-module was constructed by inserting it between the cover glass and the EVA. To analyze the PID phenomenon, a cell-level PID acceleration test based on IEC 62804-1 standard was conducted. Also analyzed power output (Pmax), efficiency, and shunt resistance through Light I-V and Dark I-V. As a result, conventional solar cells were decreased by 6.3% from the initial efficiency of 19.76%, but the improved solar cells with the Moth-eye nanostructured optical film only decreased 0.6%, thereby preventing the PID phenomenon. As of Moth-eye nanostructured optical film, the transmittance was improved by 4%, and the solar module output was improved by 2.5%.

Disassembly of Chlorophyll-Protein Complexes in Arabidopsis thaliana during Dark-Induced Foliar Senescence

  • Lee, Choon-Hwan
    • Journal of Plant Biology
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    • v.39 no.4
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    • pp.301-307
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    • 1996
  • The disassembly of Chl-protein complexes during dark-induced senescence (DIS) was investigated using detached third and fourthleaves of 21$\pm$1 day-old Arabidopsis thaliana. Although Chl content decreased linearly after 1 d, a significant decrease of photochemical effeciency (Fv/Fm) was observed after 2 d. In experiments using native green gel electrophoresis of Chl-protein complexes combined with additional two-dimensional SDS-PAGE analysis, we could observe the degradation of both photosystems after 2 d. Although light-harvesting complex(LHC) for PSI (LHCI) was degraded first in PSI complex, small PSII apoproteins including CP47/CP43 and D1/D2 apoproteins were degraded first in PSII complexes. LHC for PSII (LHCII) trimers were stable until 4 d. The level of LHCII monomers was increased until 3 and decreased thereafter, resulting in the increase of free pigments. These results suggest that the disassembly process of PSI is different from that of PSII.

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Quality evaluation of diamond wire-sawn gallium-doped silicon wafers

  • Lee, Kyoung Hee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.3
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    • pp.119-123
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    • 2013
  • Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

The design and fabrication of n-type rear local emitter by calculation (N-type rear local emitter 태양전지의 시뮬레이션을 통한 구조 설계 및 제조)

  • Kim, Soo Min;Bae, Su Hyun;Kim, Seong Tak;Kim, Hyun Ho;Park, Hyo Min;Kim, Young Do;Park, Sungeun;Tark, Sung Ju;Kim, Donghwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.107.1-107.1
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    • 2011
  • 현재 상용으로 많이 사용되는 p-type 태양전지는 Dopant로 사용된 Boron이 $O_2$와 결합하면서 Light induced degradation이 발생하여 태양 전지 효율의 감소를 불러일으키는 단점이 있다. 이러한 문제를 해결하기 위하여 여러 가지 방법들이 제시되었는데 일반적으로 n-type wafer를 이용함으로써 Light induced degradation을 해결하는 방법이 주로 사용된다. n-type 태양전지를 제조함에 있어서 보다 높은 효율을 달성하기 위하여 태양전지 후면 구조에 local contact 개념을 도입하여 rear local emitter를 형성함으로써 전체적인 효율 증가를 도모하였다. 이러한 local contact을 제조하기 위해서는 전기적으로 구조적으로 고려할 사항들이 여러 가지 존재한다. 따라서 우리는 이러한 고려 사항들을 실험적인 방법으로 결정하는 것이 아니라, 정교한 변수 통제를 이용한 시뮬레이션으로 최종적인 효율 상승을 가져오는 조건을 찾으려고 한다. 이때 사용될 수 있는 시뮬레이션은 여러 가지 종류가 존재하는데 우선 상용 태양전지의 해석에 가장 많이 사용되는 PC1D프로그램이 있다. 그러나 PC1D의 경우에는 1차원의 해석만 가능하기 때문에 local contact의 2차원 이상의 구조 변화에 따른 최종적인 효율을 계산하는데 무리가 따르게 된다. 따라서 2차원 이상의 형상에 대한 분석이 가능한 프로그램을 이용하여 실제 셀에서 일어나는 현상을 더 정밀하게 모사함으로써 local contact에서 일어나는 전기적, 구조적 변화가 최종적인 효율에 어떻게 영향을 미치는지를 파악해볼 것이며, 어떤 구조를 선택하였을 때 가장 높은 효율을 달성할 수 있는지 알아보려고 한다.

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Role of Plant Hormones in the Senescing Detached Leaves of Phaseolus vulgaris (강남콩 잎의 노화에 있어서 식물 호르몬의 역할)

  • 이동희;서영희;김영상
    • Journal of Life Science
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    • v.7 no.4
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    • pp.297-308
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    • 1997
  • Role of plant hormones on the leaf senescence of Phaseolus vulgaris were investigated by measuring the disassembly of chlorophyll-protein complexes in detached leaves treated with NAA, GA$_{3}$ , or BA. The loss of chlorophyll that was characteristic of leaf senescence induced disassembly of chlorophyll-protein complexed. During dark-induced senescence, PSI complex was rapidly degraded after the early stage, whereas RC-Core3 was slightly increased until the middle stage and slowly decreased thereafter. And gradual degradation of trimeric LCHII progressed after the late stage of senescence. Exogenous application of NAA and GA$_{3}$ had little or no effect in protecting disassembly of chlorophyll-protein complexes during leaf senescence compared to control. However exogenous BA application strongly leaves. In the simultaneous treatment of plant hormones and light, BA application under illumination of light was most effective in the stability of chlorophyll-protein complexes, particularly PSI, LHCII, RC-Core2, RC-Core3 and SC-1. these results suggest, therefore, that simultaneous application of BA and light induced synergistic effect on the stability off chlorophyll-protein complexes during leaf senescence.

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Analysis of Aluminum Back Surface Field on Different Wafer Specification

  • Park, Seong-Eun;Bae, Su-Hyeon;Kim, Seong-Tak;Kim, Chan-Seok;Kim, Yeong-Do;Tak, Seong-Ju;Kim, Dong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.216-216
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    • 2012
  • The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

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