• 전자통신동향분석
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• 제34권5호
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• pp.99-112
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• 2019

A quantum light source is an essential element for quantum information technology, including quantum communication, quantum sensor, and quantum computer. Quantum light sources including photon number state, entangled state, and squeezed state can be divided into two types according to the generation mechanism, namely single emitter and non-linear based systems. The single emitter platform contains atom/ion trap, solid-state defect/color center, two-dimensional material, and semiconductor quantum dot, which can emit deterministic photons. The non-linear based platform contains spontaneous parametric down-conversion and spontaneous four-wave mixing, which can emit probabilistic photon pairs. For each platform, we give an overview of the recent research trends of the generation, manipulation, and integration of single photon and entangled photon sources. The characteristics of quantum light sources are investigated for each platform. In addition, we briefly introduce quantum sensing, quantum communication, and quantum computing applications based on quantum light sources. We discuss the challenges and prospects of quantum light sources for quantum information technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.172-176
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• 1995

Schemes to trap weakly absorbed light into the cell have played an important role in improving the efficiency of both amorphous and crystlline silicon solar cells. One class of scheme relies on randomizing the direction of light within the cell by use of Lambertian(diffuse)surfaces. A second class of scheme relies on the use fo well defined geometrical features to control the direction of light wihin the cell, Widly used geometrical features in crystalline silicon solar cells are the square based pyramids and V-shaped grooves formed in (100) orientated surfaces by intersecting(III) crystallographic planes exposed by anisotropic etching. 18.5% conversion efficiency of Buried Contact Solar Cell with pyramidally textured surface has been achieved. 18.5% efficiency of silicon solar cell is one the highest record in the world The efficieny of cell without textured surface was 16.6%, When adapting textured surface to the Cell, the efficiency has been improved over 12%.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권7호
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

• Journal of Information Display
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• 제8권3호
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• pp.11-16
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• 2007

Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J-V characteristics of the multi-layer organic light emitting diodes are carried out. Drift-diffusion current transport, field-dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.24-28
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• 2004

We have used ITO/Alq$_3$/Al structure to study electrical conduction mechanism in organic light-emitting diodes. Current-voltage-luminance characteristics were measured at room temperature by varying the thickness of Alq$_3$ layer from 60 to 400mm. We were able to confirm that there are three different mechanisms depending on the applied voltage region; ohmic, space-charge-limited current, and trap-charge-limit-current mechanism. And the maximum luminous efficiency was obtained when the thickness of Alq$_3$ layer is 200nm.

• 농업과학연구
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• 제29권1호
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• pp.32-43
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• 2002

충청남도 지역의 공주와 청양, 부여 지방에서 1996년, 1998년, 1999년 3년간 밤나무 종실의 주요 해충인 복숭아명나방(Dichocrocis punctiferalis)의 발생소장을 파악하기 위하여 유아등과 합성 성페로몬 트랩을 설치하여 유인되는 개체수를 조사하였으며, 또한 각각의 지역에서 밤나무 종실의 피해율을 조사하였다. 1996년에 공주 지역의 3개소에 유아등을 설치하여 조사한 결과, 밤나무 구과에 피해를 주는 2화기 성충의 발생 최성기는 8월 초순이었으며, 9월 이후 3화기로 추정되는 개체가 발생했다. 숙기별 밤송이 평균 피해율은 26.5%이었으며 조생종, 만생종, 중생종의 순으로 피해가 심했다. 1998년에 공주, 청양, 부여 3개 지역에 합성 성페로몬 트랩을 설치하여 년중 발생소장과 피해율을 조사한 결과, 공주 지역에서는 2화기 성충이 8월 중순에, 3화기 성충이 9월 하순에 발생하였으며, 청양지역에서는 8월초~9월말까지 연속적으로 5번의 발생 최성기를 보여 2, 3화기가 혼재해 나타났다. 부여 지역에서는 8월중순에 2화기 성충이 발생했으며 9월말~10월초에 걸쳐 3화기 성충이 발생했다. 1999년에 3화기 발생 최성기를 집중적으로 조사한 결과 공주, 청양, 부여 지역의 발생 최성기가 각각 9월 상순, 9월 중순, 9월말로 나타났으며 피해율은 각각 6.8%, 6.6%, 15.3%로 나타났다. 1999년에 밤나무 품종별 피해율을 조사한 결과 부여 지역에서는 은기, 축파, 단파, 복파, 왕정, 병고57, 유마 순으로 피해가 심했으며, 청양 지역에서는 축파, 덕명, 병고57 순으로 피해가 심했다.

• 대한화장품학회:학술대회논문집
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• 대한화장품학회 2003년도 IFSCC Conference Proceeding Book II
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• pp.405-406
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• 2003

DNA is known as the genetic material in cells. Various environmental factors can cause DNA damages. One of them is sunlight. The life on earth depends on the sunlight, but on the other hand, the UV light in sunlight can cause skin DNA damages. When these damages are not fully repaired before replication, they can lead to mutations of oncogenes and tumour suppressor gene and result in photo carcinogenesis, in the end, skin cancer.(omitted)

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evalulate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to charactrize the surface states. A qualitative analysis of the proposed measuremen is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1088-1091
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4'-diamine (TPD) as a hole transport and trim(8-hydroxyquinoline) alulninum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.