• Title/Summary/Keyword: light optical light microscopy

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Introduction to Cathodoluminescence Spectroscopy Using Scanning Transmission Electron Microscopy (주사 투과 전자현미경을 활용한 음극형광 분석법)

  • Sung-Dae Kim
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.326-331
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    • 2023
  • The utilization of scanning transmission electron microscopy (STEM) in conjunction with cathodoluminescence (CL) has emerged as a valuable tool for the investigation of material optical properties. In recent years, this technique has facilitated significant advancements in the fields of plasmonics and quantum emitters by surpassing prior technical restrictions. The review commences by providing an outline of the diverse STEM-CL operating modes and technical aspects of the instrumentation. The review explains the fundamental physics of light production under electron beam irradiation and the physical basis for interpreting STEM-CL experiments for different types of excitations. Additionally, the review compares STEM-CL to other related techniques such as scanning electron microscope CL, photoluminescence, and electron energy-loss spectroscopy.

Development of a Total Internal Reflection Fluorescence (TIRF) Microscopy for Precise Imaging the Drying Pattern of a Sessile Droplet (고착 액적 증발면의 정밀 관측을 위한 전반사 형광 현미경 기법 개발)

  • Wonho Cho;Jinkee Lee
    • Journal of the Korean Society of Visualization
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    • v.21 no.3
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    • pp.65-74
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    • 2023
  • Compared to epifluorescence(EPI) microscopy which captures fluorescence from the entire depth of sample, total internal reflection fluorescence(TIRF) can selectively visualize only a single surface of it. TIRF uses a thin evanescent field generated by the total internal reflection of laser light on surface. However, conventional TIRF system are designed for total internal reflection to occur at the upper surface of sample, making them unsuitable for sessile droplet imaging. We designed a TIRF system suitable for a sessile droplet imaging by utilizing slide glass as a lightguide. We presented the details for constructing the TIRF system using a prism, slide glass, air slit, and optical trap. Then, we compared the TIRF with EPI by imaging the droplet with fluorescent particles during its drying process. As a result, TIRF allows us to distinctly visualize the drying pattern on the bottom surface of droplet.

Luminescent Characteristics of Bi Co-doped ZnS:Mn Yellow Phosphors for White Light Emitting Diodes (Bi를 첨가한 백색 LED용 ZnS:Mn 황색형광체의 발광특성)

  • Jung, Jong-Hun;Yu, Il
    • Korean Journal of Materials Research
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    • v.21 no.1
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    • pp.46-49
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    • 2011
  • Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

Visible light assisted photocatalytic degradation of methylene blue dye using Ni doped Co-Zn nanoferrites

  • Thakur, Preeti;Chahar, Deepika;Thakur, Atul
    • Advances in nano research
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    • v.12 no.4
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    • pp.415-426
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    • 2022
  • Nickel substituted cobalt-zinc ferrite nanoparticles with composition Co0.5Zn0.5NixFe2-xO4 (x = 0.25, 0.5, 0.75, 1.0) were synthesized using a wet chemical method named citrate precursor method. Various characterizations of the prepared nanoferrites were done using X-ray powder diffractometry (XRD), Scanning electron microscopy (SEM), UV visible spectroscopy and Fourier transform spectroscopy technique (FT-IR). XRD confirmed the formation of cubic spinel structure of the samples with single phase having one characteristic peak at (311). The value of optical band gap (Eg) was found to decrease with Ni substitution and have values in the range 2.30eV to 1.69eV. A Fenton-type system was created by photocatalytic activity using source of visible light for removal of methylene blue dye. Observations revealed increase in the degradation of methylene blue dye with increasing nickel content in the samples. The degradation percentage was increased from 77.32% for x = 0.25 to 90.16% for x = 1.0 in one hour under the irradiation of visible light. Also, the degradation process was found to have pseudo first order kinetics model. Hence, it can be observed that synthesized nickel doped cobalt-zinc ferrites have good capability for water purification and its degradation efficiency enhanced with increase in nickel concentration.

Fabrication of AlGaN-based vertical light-emitting diodes

  • Bae, Seon Min;Jeon, Hunsoo;Lee, Gang Seok;Jung, Se-Gyo;Kim, Kyoung Hwa;Yi, Sam Nyung;Yang, Min;Ahn, Hyung Soo;Yu, Young Moon;Kim, Suck-Whan;Cheon, Seong Hak;Ha, Hong-Ju;Sawaki, Nobuhiko
    • Journal of Ceramic Processing Research
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    • v.13 no.spc1
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    • pp.75-77
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    • 2012
  • The AlGaN-based vertical light-emitting diodes (LEDs) on thick GaN epilayer were fabricated by a hydride vapor phase epitaxy with multi sliding boat system. The optical and electrical characteristics of AlGaN-based vertical LEDs were evaluated using a scanning electron microscopy, electroluminescence and I-V measurements. The AlGaN-based vertical LEDs structure has hexagonal symmetry, 500 ㎛ in diameter and above 67 ㎛ in growth thickness. At the room-temperature, the broaded strong peak and relatively high intensity peak were gradually measured at 405 nm with increasing injection current. And a forward operator voltage was measured to be about 7.5 V.

Nanoscale Patterning Using Femtosecond Laser and Self-assembled Monolayers (SAMs) (펨토초레이저와 자기조립박막을 이용한 나노스케일 패터닝)

  • Chang, Won-Seok;Choi, Moo-Jin;Kim, Jae-Gu;Cho, Sung-Hak;Whang, Kyung-Hyun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.9
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    • pp.1270-1275
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    • 2004
  • Standard positive photoresist techniques were adapted to generate nano-scale patterns of gold substrate using self-assembled monolayers (SAMs) and femtosecond laser. SAMs formed by the adsorption of alkanethiols onto gold substrate are employed as very thin photoresists, Alkanethiolates formed by the adsorption of alkanethiols are oxidized on exposure to UV light in the presence of air to alkylsulfonates. Specifically, it is known that deep UV light of wavelength less than 200nm is necessary for oxidation to occur. In this study, ultrafast laser of wavelength 800nm and pulse width 200fs is applied for photolithography. Results show that ultrafast laser of visible range wavelength can replace deep UV laser source for photo patterning using thin organic films. Femtosecond laser coupled near-field scanning optical microscopy facilitates not only the patterning of surface chemical structure, but also the creation of three-dimensional nano-scale structures by combination with suitable etching methods.

Electrical and Optical Characterizations of Metal/Semiconductor Contacts for Photovoltaic Applications

  • Kim, Dong-Uk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.11.2-11.2
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    • 2010
  • Photovoltaic devices are promising candidates as affordable and large-area renewable energy sources, which can replace the fossil-fuel-based resources. Especially, thin film solar cells have attracted increasing research attention, since they have a great advantage of low production cost. From the physical point of view, the photovoltaic devices can provide us interesting questions, how to enhance the light absorption and the carrier collection efficiency. A lot of approaches would be possible to address these issues. We have focused on two major topics relevant to photovoltaic device physics; (1) light management using surface plasmons and (2) junction characterizations aiming at proper interface engineering. Regarding the first topic, we have investigated the influences of Ag under-layer morphology on optical properties of ZnO thin films. The experimental results suggested that coupling between the surface plasmon polaritons at the ZnO/Ag interface and excitons in ZnO should play important roles in reflectivity of the ZnO/Ag thin films, which are widely used back reflector structures in thin film solar cells. For the second topic, we have carried out scanning probe microscopy studies of Schottky junctions consisting of photovoltaic materials. Such a research is very helpful to understand the correlation between the defects (e.g., grain boundaries) and local electrical properties. We will introduce some of the recent experimental results and discuss the physical significance.

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Morphology Development in a Range of Nanometer to Micrometer in Sulfonated Poly(ethylene terephthalate) Ionomer

  • Lee, Chang-Hyung;Inoue, Takashi;Nah, Jae-Woon
    • Bulletin of the Korean Chemical Society
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    • v.23 no.4
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    • pp.580-586
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    • 2002
  • We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

Characterization of CdS-quantum dot particles using sedimentation field-flow fractionation (SdFFF) (침강 장-흐름 분획법을 이용한 CdS 양자점 입자의 특성 분석)

  • Choi, Jaeyeong;Kim, Do-Gyun;Jung, Euo Chang;Kwen, HaiDoo;Lee, Seungho
    • Analytical Science and Technology
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    • v.28 no.1
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    • pp.33-39
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    • 2015
  • CdS-QD particles are a nano-sized semiconducting crystal that emits light. Their optical properties show great potential in many areas of applications such as disease-diagnostic reagents, optical technologies, media industries and solar cells. The wavelength of emitting light depends on the particle size and thus the quality control of CdS-QD particle requires accurate determination of the size distribution. In this study, CdS-QD particles were synthesized by a simple ${\gamma}$-ray irradiation method. As a particle stabilizer polyvinyl pyrrolidone (PVP) were added. In order to determine the size and size distribution of the CdS-QD particles, sedimentation field-flow fractionation (SdFFF) was employed. Effects of carious parameters including the the flow rate, external field strength, and field programming conditions were investigated to optimize SdFFF for analysis of CdS-QD particles. The Transmission electron microscopy (TEM) analysis show the primary single particle size was ~4 nm, TEM images indicate that the primarty particles were aggregated to form secondary particles having the mean size of about 159 nm. As the concentration of the stabilizer increases, the particle size tends to decrease. Mean size determined by SdFFF, TEM, and dynamic light scattering (DLS) were 126, 159, and 152 nm, respectively. Results showed SdFFF may become a useful tool for determination of the size and its distribution of various types of inorganic particles.

Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition

  • Seong, Jin-Wook;Yoon, Ki-Hyun;Kim, Ki-Hwan;Beag, Young-Whoan;Koh, Seok-Keun
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.364-369
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    • 2004
  • The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.