• Title/Summary/Keyword: light I-V

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Use of a Transformed Diode Equation for Characterization of the Ideality Factor and Series Resistance of Crystalline Silicon Solar Cells Based on Light I-V Curves (Light I-V 곡선을 이용한 결정질 태양전지의 이상계수와 직렬 저항 특성 분석)

  • Jeong, Sujeong;Kim, Soo Min;Kang, Yoonmook;Lee, Hae-seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.422-426
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    • 2016
  • With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

UBVRI CCD PHOTOMETRY OF THE TYPE Ic SUPERNOVA SN 1994I IN M51: THE FIRST TWO MONTHS

  • LEE MYUNG GYOON;KIM EUNHYEUK;KIM SANG CHUL;KIM SEUNG LEE;PARK WON KEE;PYO TAE SOO
    • Journal of The Korean Astronomical Society
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    • v.28 no.1
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    • pp.31-43
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    • 1995
  • We present UBVRI CCD photometry of the Type Ie supernova SN 19941 in M51 which was discovered on April 2, 1994 (UT). UBVRI CCD photometry of SN 1994 I were obtained for the period of the first two months from April 4, 1994, using the Seoul National University Observatory 60 cm telescope. The light curves of SN 19941 show several interesting features: (a) SN 19941 reaches the maximum brightness at B-band on April 8.23 (B = 13.68 mag), at V-band on April 9.10 (V = 12.89 mag), and at I-band on April 10.32 (I = 12.48 mag); (b) The light curves around the maximum brightness are much narrower than those of other types of supernovae; (c) The light curves after the peak decline more steeply than those of other types of supernovae; and (d) The colors get redder from $(V-R){\approx}0.2 mag ((V - I){\approx} 0.3 mag, (B - V){\approx}0.7 mag)$ on April 4 to $(V-R){\approx}0.6 mag ((V-1){\approx}0.9 mag, (B-V){\approx}1.3 mag)$ on April 18. Afterwards (V - R) colors get bluer slightly $(by\~0.005 mag/day)$, while (V-I) colors stay almost constant around $(V-1){\approx}1.0 mag$. The color at the maximum brightness is (B-V)=0.9 mag, which is $\~1$mag redder than the mean color of typical Type la supernovae at the maximum brightness. The light curves of SN 1994I are similar to those of the Type Ie supernova SN 1962L in NGC 1073. Adopting the distance modulus of $(m-M)_0 = 29.2 mag$ and the reddening of E(B - V) = 0.45 mag [Iwamoto et al. 1994, preprint for ApJ], we derive absolute magnitudes at the maximum brightness of SN 1994I, Mv(max) = -17.7 mag and MB(max) = -17.4 mag. This result shows that SN 1994I was $\~2$mag fainter at the maximum brightness compared with typical Type Ia supernovae. A narrower peak and faster decline after the maximum in the light curve of SN 1994I compared with other types of supernovae indicate that the progenitor of SN 1994I might be a lower mass star compared with those of other types of supernovae.

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Performance of CSK Scheme for V2I Visible Light Communication

  • Kim, Hyeon-Cheol;Kim, Byung Wook;Jung, Sung-Yoon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.3
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    • pp.595-601
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    • 2015
  • These days, research related to Intelligent Transportation System (ITS) technology is being widely considered. ITS is inevitable for future transportation systems to reduce accidents, congestion, and offer a smooth flow of traffic. The use of Visible Light Communication (VLC) in ITS systems has been considered widely because of its EMC/EMI free and LED infrastructure reusable properties. Among the VLC schemes, this study analyzed the performance of the Color Shift Keying (CSK) scheme under a Vehicle-to-Infrastructure (V2I) downlink scenario to verify the capability of CSK as a communication tool for ITS. By modeling daylight noise using the modified Blackbody radiation model, this study examined the performance of V2I VLC under daytime conditions. The relationship between BER, the communication distance, and the amount of ambient-light noises under the pre-described V2I scenario were determined by simulations.

Characteristics of a-Si:H Films for Contact-type Linear Image Sensor (밀착형 선형 영상감지소자를 위한 a-Si:H막의 특성)

  • 오상광;박욱동;김기완
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.11
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    • pp.894-901
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    • 1991
  • Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

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Analysis of the Optical and Electrical Properties of a White OLEDs Using the newly Synthesized Blue Material (신규 합성 청색재료를 사용한 백색 유기발광소자의 광학적$\cdot$전기적 특성평가)

  • Yoon Seok Beom
    • Journal of the Korea Society of Computer and Information
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    • v.10 no.1 s.33
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    • pp.1-6
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    • 2005
  • White light emission is very important for applying electroluminescent device to full display, backlight and illumination light source. In this letter, Multilayer molecular organic white-light-emitting device using thin nim of blue material nitro-DPVT with fluorescent dye Rubrene for an orange emission were fabricated. The basic structure of the fabricated device is a-NPD / nitro-DPVT / nitro- DPVT:Rubrene / BCP/ Alq3. Aluminum is used as the cathode material and ITO was anode material. The white light emission spectrum covers a wide range of the visible region and the Commission Internationale do I'E clairage (C.I.E.) coordinates of the emitted light was ((0.3347, 0.3515) at 14V. The turn voltage is as low as 2.5V and quantum efficiencies are $0.35\%$.

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Electrophotographic properties of $\tau$-H$_2$Pc/oxadiazole photoreceptor (I) ($\tau$-H$_2$PC/oxadiazole 유기이층막의 감광특성 연구 (I))

  • 이덕출;박구범;조기선;오승현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.141-143
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    • 1993
  • A nontoxic organic photoreceptor for near infrared light has been developed. A double layered photoreceptor using $\tau$-H$_2$Pc as the CGL was made. The CTL was formed by oxadiazole derivative dispersed in two other host polymers. This photoreceptor has a charge acceptance of -900 V when a corona charge is used, and has residual potentials of -20 V for PC, and -10 V for PVB by light irradiation.

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A Study on Characteristics of Organic Light-Emitting Device with Various Cathodes (음극전극의 종류에 따른 유기발광소자의 특성에 관한 연구)

  • 노병규;김중연;오환술
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.37-40
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    • 2000
  • This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al:Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

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CONTROL OF POLARIZATION OF LIGHT TRANSMITTED AND REFELECTED BY ANISOTROPIC SUBSTRATES WITH MICRORELIEF

  • Belyaev, V.V.;Kushnir, E.M.;Kalashnikov, A.Y.;Klyckov, A.V.;Tsoy, V.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1251-1253
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    • 2004
  • Light diffraction on optically anisotropic substrates with the surface microrelief has been calculated by using the OAGSM method. Varying of the microrelief depth and material birefringence allows to realize different polarization state of the light beam transmitted or reflected by the substrate. The approach can be used to optimize the LCD backlight.

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Current-Voltage Characteristics with a direction of Voltage in Organic Light-Emitting Diodes (유기 전기발광 소자에서 인가전압 방향에 따른 전류-전압 특성)

  • Kim, Sang-Keol;Chung, Dong-Hoe;Chung, Taek-Gyun;Lee, Ho-Sik;Kim, Tae-Wan;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.130-132
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    • 2001
  • We have investigated current-voltage (I-V) characteristics of organic light-emitting diodes based on $TPD/Alq_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from $Alq_3$.

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Current-Voltage Characteristics with a direction of Voyage in Organic Light-Emitting Diodes (유기 전기발광 소자에서 인가전압 방향에 따른 전류-전압 특성)

  • 김상걸;정동회;정택균;이호식;김태완;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.130-132
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    • 2001
  • We have investigated current-voltage(I-V) characteristics of organic light-emitting diodes based on TPD/Alq$_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from Alq$_3$.

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