• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.165-165
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• 1996

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.02a
• /
• pp.169-169
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• 1996

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.02a
• /
• pp.167-167
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• 1996

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.401-404
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• 2004

Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2013-2015
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• 1997

Elevator stops emergently when power failures happen during operation. In that case, the passenger should wait with frightened in the car untill they are rescued by repair man or power resumes. This paper describes an automatic landing device for power-failure(ALP) that consists of UPS and battery charge control system. The excellence of the ALP operation is verified by experiments in elevator test tower.

• Journal of Korean Institute of Industrial Engineers
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• v.32 no.4
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• pp.338-346
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• 2006

In this paper, we analyze and review introduction, implementation, and revision phases in the six sigma movement in LG Electronics. In LG Electronics, 6 sigma activities have been activated not only at manufacturing divisions but also in transactional processes, business, product R&D, marketing, and software development. At present, six sigma is a tool to improve processes and also become the engine of the business innovation. In this paper, concepts and contents of an on-going LG innovation process called TDR(Tear Down & Redesign) are explained in detail. We also propose important aspects and give the future prospect for six sigma.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1333-1335
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• 2007

We studied the surface defects and the current distributions of ITO thin films by reflected electron energy loss spectroscopy (REELS) and conductiveatomic force microscope (c-AFM). The ohmic behavior of ITO thin film was observed at $230\;^{\circ}C$ annealed sample. The defects related to the electronic structure decreased after anneal process.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1071-1074
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• 2007

6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) has been developed and verified by manufacturing a 6Mask CMOS AMLCD panel. The novel 6Mask CMOS process is realized by eliminating the storage mask, gate mask and via open mask of conventional structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1774-1777
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• 2007

Ultra-fine Ag line was automatically patterned to the extent of 10 ${\mu}m$ in width by slit coating on the $10^4$ $mm^2$ glass, which was pre-patterned as hydrophobic and hydrophilic zone by using hydrophobic material. The resistivity of Ag film was about $4{\mu}\;{\Omega}{\cdot}cm$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1298-1300
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• 2007

The interface between SiNx and ZnO was investigated with Near Edge X-ray Absorption Fine Structure (NEXAFS) for ZnO based thin film transistor (TFT) applications. Impurity species were interstitial $N_2$ molecules at the SiNx / ZnO interface. The evolution of $N_2$ is decreased with increasing of anneal temperature.