• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.16 no.1
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• pp.59-68
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• 1986

The purpose of this investigation was to locate the central plane of the image layer on the panoramic machine relative to a specific point on the machine. In the study of the central plane of the image layer of panoramic radiograph, using the Morrita Company PANEX-EC a series of 33 exposures were taken with the 4-5 experimental pins placed in the holes of the plastic model plate, then evaluated by human eye. The author analyzed the central plane of the image layer by Mitutoyo-A-221 and calculated horizontal and vertical magnification ratio in the central plane of the image layer determined experimentally. The results were as follows: 1. The location of the central plane of the image layer determined experimentally was to lateral, compared with manufactural central plane. 2. Horizontal magnification ratio in the central plane of the image layer determined experimentally was 9.25%. 3. Vertical magnification ratio in the central plane of the image layer determined experimentally was 9.17%.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.313-316
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• 2009

A zinc borosilicate glass having a low softening temperature of $490^{\circ}C$ has been investigated as a protective layer for Ag patterns against chemical reactions with a $I^-/I_3^-$ electrolyte in dye-sensitized solar cells (DSSCs). A thick glass layer was prepared by the typical screen printing and firing processes to obtain a final thickness of ${\sim}5{\mu}m$. The chemical leaching performance of the glass layer in the electrolyte revealed that the reactive Ag pattern can be significantly protected by utilizing the low softening protective layer. The electrical resistance of the FTO-coated glass substrate was effectively maintained at a low value of ${\sim}27{\Omega}$ as long as the glass layer was well densified at a sufficiently high temperature of ${\sim}520^{\circ}C$. The transmittance of the layer was near 60%, depending on the firing temperature of the glass layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• Journal of Microbiology and Biotechnology
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• v.16 no.1
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• pp.15-19
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• 2006

A ferredoxin adsorbed hetero self-assembled layer was fabricated on chemically modified Au substrate, 4-Aminothiophenol (4-ATP) was deposited onto Au substrate and then N-succinimidyl-3-[2-pyridyldithio] propionate (SPDP) was adsorbed on the 4-ATP layer, since SPDP was used as a bridging molecule for ferredoxin adsorption, Ferredoxin/SPDP/4-ATP structured hetero layer was constructed because of strong chemical binding of ferredoxin, SPDP, and 4-ATP, The surface of the ferredoxin-adsorbed SPDP/4-ATP layer was observed by scanning tunneling microscopy, The hetero film formation was verified by surface plasmon resonance measurement. The current flow and rectifying property based on the scanning tunneling spectroscopy I-V characteristics was achieved in the proposed hetero layer. Thus, the hetero layer structure of ferredoxin functioned as a molecular diode with rectifying property, The proposed molecular diode can be usefully applied for the development of molecular scale electronic devices.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.2
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• pp.33-44
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• 2011

The inorganic powder EL lamp was made by screen printing technique with a phosphor ink and a dielectric ink. The thickness of a phosphor ink layer and a dielectric ink layer is $35{\mu}m$ and $54{\mu}m$ respectively. A increasing ratio of the luminance of inorganic powder EL lamp to be a 1P1PD-phosphor ink layer in which increased voltage at constant frequency is higher 12% than when increased frequency at constant voltage. It is higher 57% than when increased frequency at constant voltage that the rate of increase of the luminance of inorganic powder EL lamp to be a 2PD-phosphor ink layer in which increased voltage at constant frequency. Finally, when increased voltage at constant frequency, a increasing ratio of the luminance of inorganic powder EL lamp to be a 2PD-phosphor ink layer is higher about 40% than that to be a 1P1PD-phosphor ink layer.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.9
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• pp.159-165
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• 1994

In this paper, we propose a multi-layer associative neural network structure suitable for hardware implementaion with the function of performance refinement and improved robutst capability. Unlike other methods which reduce network complexity by putting restrictions on synaptic weithts, we are imposing a requirement of hidden layer neurons for the function. The proposed network has synaptic weights obtainted by Hebbian rule between adjacent layer's memory patterns such as Kosko's BAM. This network can be extended to arbitary multi-layer network trainable with Genetic algorithm for getting hidden layer memory patterns starting with initial random binary patterns. Learning is done to minimize newly defined network error. The newly defined error is composed of the errors at input, hidden, and output layers. After learning, we have bidirectional recall process for performance improvement of the network with one-shot recall. Experimental results carried out on pattern recognition problems demonstrate its performace according to the parameter which represets relative significance of the hidden layer error over the sum of input and output layer errors, show that the proposed model has much better performance than that of Kosko's bidirectional associative memory (BAM), and show the performance increment due to the bidirectionality in recall process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.1-346.1
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• 2014

Porous nano crystalline $TiO_2$ is currently used as a working electrode in a dye-sensitized solar cell (DSSC). The conventional working electrode is comprised of absorption layer (particle size:~20 nm) and scattering layer (particle size:~300 nm). We inserted window layer with 10 nm particle size in order to increase transmittance and specific surface area of $TiO_2$. The electrochemical impedance spectroscope analysis was conducted to analysis characterization of the electronic behavior. The Bode phase plot and Nyquist plot were interpreted to confirm the internal resistance caused by the insertion of window layer and carrier lifetime. The photocurrent that occurred in working electrode, which is caused by rise in specific surface area, increased. Accordingly, it was found that insertion of window layer in the working electrode lead to not only effectively transmitting the light, but also increasing of specific surface area. Therefore, it was concluded that insertion of window layer contributes to high conversion efficiency of DSSCs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.8
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• pp.1612-1627
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• 1994

There is a synchronization function which deals with only single media of text in the OSI Session Layer. So new synchronization schem and synchronization protocol are required for multimedia communications which include audio, video and graphic as well as text information. In this paper, conceptional Multmedia Synchronization Layer(MS layer) environment is composed and its service primitives and protocols based on 'multi-channel, base media scheme' are designed and proposed for multimedia synchronization services. This MS layer Manager (MSM) establishes the MS layer connection to the peer MS layer and manages each media channel which is created in MS layer media by media. The MSM also finds the synch-position through the media frame number by utilizing it like the time stamp to provide inter-media synchronization services as well as intra-media synchronization services.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.265-269
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• 2004

Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15～25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.