• Journal of Powder Materials
• /
• v.26 no.6
• /
• pp.455-462
• /
• 2019

ZrB₂ ceramic and ZrB₂ ceramic composites with the addition of SiC, WC, and SiC/WC are successfully synthesized by a spark plasma sintering method. During high-temperature oxidation, SiC additive form a SiO₂ amorphous outer scale layer and SiC-deplete ZrO₂ scale layer, which decrease the oxidation rate. WC addition forms WO₃ during the oxidation process to result in a ZrO₂/WO₃ liquid sintering layer, which is known to improve the anti-oxidation effect. The addition of SiC and WC to ZrB₂ reduces the oxygen effective diffusivity by one-fifth of that of ZrB₂. The addition of both SiC and WC shows the formation of a SiO₂ outer dense glass layer and ZrO₂/WO₃ layer so that the anti-oxidation effect is improved three times as much as that of ZrB₂. Therefore, SiC- and WC-added ZrB₂ has a lower two-order oxygen effective diffusivity than ZrB₂; it improves the anti-oxidation performance 3 times as much as that of ZrB₂.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.4
• /
• pp.344-349
• /
• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Journal of the Korean Society for Heat Treatment
• /
• v.13 no.4
• /
• pp.217-223
• /
• 2000

The boronizing effects of STD 61 steel have been studied on the micro structure and hardness. The STD 61 Steel was soaked in molten salt, consisted of KCl, $BaCl_2$, NaF, $B_2O_3$, FeB, and Ce, at various temperatures and times. The boronizing conditions for the peak hardness were the temperature range of $900^{\circ}C$ to $950^{\circ}C$ for 5 hr and that of $1000^{\circ}C$ for 3 hr, respectively. Four boride layers such as FeB, $Fe_2B$, ${\alpha}$ and matrix layer surface were observed from the microscopic surface examination. The thickness of boride layer was increased by increasing the boronizing time and the temperature. The structure of boride layer was tooth shape.

• Journal of the Korean Ceramic Society
• /
• v.18 no.2
• /
• pp.79-82
• /
• 1981

SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)

• Journal of Powder Materials
• /
• v.21 no.6
• /
• pp.434-440
• /
• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

• Progress in Superconductivity
• /
• v.7 no.2
• /
• pp.120-129
• /
• 2006

We comparatively studied the epitaxial growth conditions of $CeO_2$ and $Y_2O_3$ thin buffers on textured Ni tapes using rf magnetron sputtering and investigated the feasibility of getting a single mixture layer or sequential layers of $CeO_2$ and $Y_2O_3$ for more simplified buffer architecture. All the buffer layers were first deposited using the reducing gas of $Ar/4%H_2$ and subsequently the reactive gas mixture of Ar and $O_2$, The crystalline quality and biaxial alignment of the films were investigated using X-ray diffraction techniques (${\Theta}-2{\Theta},\;{\phi}\;and\;{\omega}\;scans$, pole figures). The $CeO_2$ single layer exhibited well developed (200) epitaxial growth at the condition of $10%\;O_2$ below an $450^{\circ}C$, but the epitaxial property was decreased with increasing the layer thickness. $Y_2O_3$ seldom showed optimum condition for (400) epitaxial growth. The sequential architecture of $CeO_2/Y_2O_3/CeO_2$ having good epitaxial property was achieved by sputtering at a temperature of $700^{\circ}C$ on the initial $CeO_2$ bottom layer sputtered at $400^{\circ}C$. Cracking of the sputtered buffer layers was seldom observed except the double layer structure of $CeO_2/Y_2O_3$.

• Korean Journal of Soil Science and Fertilizer
• /
• v.42 no.5
• /
• pp.364-370
• /
• 2009

This study was conducted to survey, analyze on the compaction layer and the plow layer at Jeonbug and Jisan series paddy soil, which is the representative soil in fluvio-marine and local alluvium, respectively. The depths of surface soil were 12.6 and 12.7 cm in Jeonbug and Jisan series, respectively. A plowing depth was 10.5 cm. The properties of compaction layer in two soil series were as follows. The hardness were $14.7kg\;cm^{-2}(25.3mm)$ and $8.7kg\;cm^{-2}(22.1mm)$ in Jeonbug and Jisan series, respectively. The thickness were 22.3 cm and 17.8 cm in Jeonbug and Jisan series, respectively. The depth of soil compaction, which means depth from surface, were 15 and 20 cm in Jeonbug and Jisan series, respectively. The relationship between the hardness of compaction layer and the depth of surface soil showed negative correlation, however relationship between the hardness and the thickness of compaction layer showed positive correlation. Soil temperature was lower in compaction layer than in plow layer. This temperature differences between compaction layer and plow layer were from 1.0 to $2.5^{\circ}C$ in Jeonbug series and from 0.7 to 2.1 in Jisan series. The soil physical properties of compaction layer were higher in bulk density and solid phase and lower in porosity and gaseous phase than those of plow layer in all soil series. The soil chemical properties of compaction layer were higher in pH, content of available silicate, exchangeable calcium and magnesium but lower in total nitrogen, content of organic matter and available phosphate than those of plow layer in all soil series. Cation exchangeable capacity and content of exchangeable potassium were similar between compaction layer and plow layer in Jeonbug series, however, in Jisan series these were lower in compaction layer than in plow layer. Elution amount of inorganic nitrogen were lower in compaction layer than in plow layer in all soil series. The content of soluble Fe and Mn were plenty in compaction layer compared with plow layer and these tendency was apparent in Jeonbug series. The water depth decrease were fast until the latter part of June, and were slow as $1{\sim}3mm\;day^{-1}$ for July and August, and were fast again from september. Rice roots distributions as each soil series and tillage method were 25 cm at rotary plowing in Jeonbug series, 30 cm at deep plowing in Jeonbug series, and 20 cm at tillage in Jisan series. Dry weight per m2 at heading stage were much in order of deep plowing in Jeonbug series, rotary plowing in Jeonbug series, and tillage in Jisan series.

• Electrical & Electronic Materials
• /
• v.7 no.4
• /
• pp.281-288
• /
• 1994

According to spread volume of B(BiPbCuO) layer, composition ratio and each stage of sintering process, we studied stability of high Tc superconductor phase and generation and growth movement of superconducting phase. The dual layer composed of SrCaCuO and BiPbCuO compound were prepared to develop the Bi-2223 superconductor[108K] through interaction and diffusion during sintering process. The dual layer samples were sintered at 830.deg. C for 0-210 hours. From the result, the optimum conditions were : spread volume(A:B=1:0.6), sintering time(210h) and composition ratio(A:S $r_{2}$C $a_{2}$C $u_{2}$- $O_{x}$, B:B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$) at 830.deg. C.. C.C.C.

• Journal of the Korean Vacuum Society
• /
• v.16 no.3
• /
• pp.215-220
• /
• 2007

Thin films of $SBT(SrBi_2Ta_2O_9)$ having $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ structure were fabricated using self-seed layer method by R.F. Magnetron sputter. Self-seed layers were deposited at room temperature and $600^{\circ}C$, which had 30 nm thickness. To investigate crystallization of self-seed layer we characterized by XRD after various heat treatment. And we characterized the crystallinity and electrical properties of SBT on self-seed layer after various heat treatment.

• Korean Journal of Materials Research
• /
• v.20 no.4
• /
• pp.217-222
• /
• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.