• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Journal of the Korean Institute of Intelligent Systems
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• v.13 no.3
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• pp.287-292
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• 2003

The ability of robot is being various and complex. The robot is utilizing distance, image data and voice data for sensing its circumstance. This paper suggests the 2-layer fuzzy control as the algorithm that control robot with various sensor information. In a obstacle avoidance, it utilizes many range finders and classifies them into 3parts(front, left, right). In 3 sub-controllers, the controller executes fuzzy conference. And then it executes combined control with a combination of outputs of 3 sub-controllers in the second step. The text compares the 2-layer fuzzy controller with the hierarchical fuzzy controller that has analogous structure. And the performance of the 2-layer fuzzy controller is confirmed by application this controller to robot following, simulation to each other and real experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.613-616
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of 1~9$\times$10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.281-283
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• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

• Journal of Mechanical Science and Technology
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• v.20 no.2
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• pp.271-277
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• 2006

A numerical study is made of the spin-up from rest of a three-layer fluid in a closed, vertically-mounted cylinder. The densities in the upper layer $\rho_1$, middle layer $\rho_2$ and lower layer $\rho_3\;are\;\rho_3\;>\;\rho_2\;>\;\rho_1$, and the kinematic viscosities are left arbitrary. The representative system Ekman number is small. Numerical solutions are obtained to the time-dependent axisymmetric Navier-Stokes equations, and the treatment of the interfaces is modeled by use of the Height of Liquid method. Complete three-component velocity fields, together with the evolution of the interface deformations, are depicted. At small times, when the kinematic viscosity in the upper layer is smaller than in the middle layer, the top interface rises (sinks) in the central axis (peripheral) region. When the kinematic viscosity in the lower layer is smaller than in the middle layer, the bottom interface rises (sinks) in the periphery (axis) region. Detailed shapes of interfaces are illustrated for several cases of exemplary viscosity ratios.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.6 no.1
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• pp.13-26
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• 2001

Six ferromanganese crusts from the Lomilik and Litatfooki seamounts in the Marshall Islands were analyzed for texture, geochemistry and stratigraphy to delineate the paleoceanographic conditions. The crusts can be divided into three layers; 1) outermost massive layer (Layer 1), 2) middle porous Fe-oxides rich layer infllled with biointemal clasts (Layer 2), and 3) innermost massive layer cemented and/or replaced by carbonate fluoapatite (CFA) (Layer 3). The Layer 1 contains higher Mn, Co, Ni, and Mg than other two layers, and the Layer 2 was relatively more enriched in Fe, Al, Ti, Ba, Cu, and Zn. However, the Layer 3 shows higher Ca and P and lower Mn, Fe, Co, and Ni contents than overlying two layers. Based on the Co-chronometry, the crusts are postulated to have begun to grow from 56-31 Ma (early Eocene to Oligocene). The boundaries between layers 1 and 2, and layers 2 and 3 are dated to be 7-3 Ma and 26-14 Ma, respectively. High contents of Ca and P in Layer 3 clearly indicate that the layer had been phosphatized prior to the formation of Layer 2. Considering the well-preserved mjcrostructures in Layer 3, it is unlike that the crusts themselves were recrystallized in suboxic condition. Also, the lower Co concentrations in Layer 3 may imply that the Co supply was not constant during the formation of Layer 3. Layer 2, characterized by the porous texture, grew over Layer 3 during 26-9 Ma. Internal biogenic sediments including foraminifera within the original cavities and the enrichment of organophillic elements such as Ba, Cu, and Zn, suggest that Layer 2 have below high production regions. Also, high content of allumino silicate components may indicate increased terrigeneous input during the formation of Layer 2. The Layer 2. The Layer 1 has been subjected to little diagenetic influence since the Pliocene.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.925-930
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• 1998

EPMA and XPS on $Bi_2Sr_2-\chi_LCa_1+\chi_LCu_2O_{8+d}$($\chi_L$ = 0.01, 0.2, 0.3, 0.4, 0.5, 0.6) films by LPE method were performed in order to investigate Sr and Ca distributions in SrO- and Ca-layers. It is found that $T_C^{zero}$ carrier concentration and lattice parameter c monotonically decreases with increasing $\chi_L$. Sr and Ca contents in Ca-layer change in proportion to that in melt. On the other hand, in SrO-layer, Ca content strongly depends on Sr content in that layer and not on Ca content in melt. Since deficiency in SrO-layer increases and $T_C^{zero}$ creases with $\chi_L$,t is found that the deficiencies of Sr and Ca atoms in the SrO-layer has a influence on reducing $T_C^{zero}$.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.