• 한국세라믹학회지
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• 제37권6호
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• pp.530-536
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• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2237-2242
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• 2011

Anomalous scaling behaviors such as significantly large growth exponent (${\beta}$) and small reciprocal of dynamic exponent (1/z) values for many molecular crystalline thin films have been reported. In this study, the variation of scaling exponent values and consequent growth behaviors of molecular thin films were more quantitatively analysed using a (1+1)-dimensional surface lateral diffusion model. From these simulations, influence of step edge barriers and grain boundaries of molecular thin films on the various scaling exponent values were elucidated. The simulation results for the scaling exponents were also well consistent with the experimental data for previously reported molecular thin film systems.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.559-561
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• 2003

We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

• 한국표면공학회지
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• 제27권5호
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• pp.292-302
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• 1994

Alloy deposits of 80Sn-20Pb, electroplated on Cu-based leadframe alloy from an organic sulfonate bath were aged at $150^{\circ}C$ to form intermetallic phases between substrate and deposit, and effects of the deposit morphology, influenced by deposition conditions, on the fracture resistance of the 80Sn-20Pb deposit aged at $150^{\circ}C$ were examined. The growth rate of intermetallic compound layer on aging depended on the microstructure of deposit ; it was fastest in deposit formed using pulse current in bath without grain refining additive, but slowest in deposit formed using dc current in bath containing grain refining additive in spite of similar structure with equivalent grain size. The grain refining additive incorporated in electrodeposit appears to inhibit diffusion of atoms on aging, resulting in slow growth of intermetallic layer in the thickness direction but substantial growth in the lateral one. Density of surface cracks that were occurring when samples were subjected to the $90^{\circ}$-bending test increased with increasing the thickness of intermatallic layer on aging. For the same aged samples, the surface crack density of the sample electrodeposited from a bath containing the grain refining additive was the least due to the inhibiting effect of the additive incorporated into the deposit during electrolysis on atomic diffusion.

• Journal of Magnetics
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• 제21권1호
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• 대한금속재료학회지
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• 제48권3호
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• pp.187-193
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• 2010

The solute carbon content in ferrite is one of the important factors to obtain good formability in low carbon steels. Although most of the carbons are consumed by the formation of grain boundary cementite during coiling after hot-rolling, the carbon content after coiling is normally observed much more than that of equilibrium. In this study, a classical nucleation and growth model is used to simulate the precipitation kinetics of the grain boundary cementite from coiling temperature (CT) to room temperature (RT). The predicted precipitation behaviors depending on the initial carbon content and the cooling rate are compared with the reported. As a result, the lateral growth of thickening of cementite is a major factor for the sluggish reaction of grain boundary cementite. The reduction of solute carbon content after coiling is divided into three regions: a) increase due to no cementite precipitation, b) decrease due to the fast length-wise growth of cementite, c) increase due to the slow thickness-wise growth of cementite.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.38-38
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• 2010

Ever since the experimental discovery of graphene exfoiliated from the graphite flakes by Geim et at., this area has drawn a lot of attention for its possible application in IT industry. For the growth of graphene, chemical vapor deposition (CVD) has been widely used to fabricate the large area graphene. The lateral size of this graphene can be easily controlled by the size of the metal substrate though the chemical etching to remove this substrate is somewhat troublesome. Another problem which is hard to avoid is the folding at the grain boundary. We will discuss the origin of the folding first and introduce the way to avoid this folding. To solve this problem, we have used the various types of micro-thin metal foils. The precise control of hydro-carbon and the carrier gas results in the formation of the graphene on top of substrate. The thickness of graphene layers can be controlled with the control of gas flow on top of Cu substrate in contrast to the previously reported self-limiting growth $behavior^1$. Uniformity of this graphene layer has been checked by micro-raman spectroscopy and SEM. The size of grain can be enhanced by thermal treatment or use of other metal substrate. The dependence of grain size on the lattice size of the substrate will be discussed. By selecting the shape of substrate, we can grow various types of graphene. We will introduce the micron size graphene tube and its application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.375-375
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• 2007

In the conventional crystallization method, thepoly-Si TFTs show poor device-to-device uniformity because of the random location of the grain boundaries. However, our new crystallization method introduced in this paper employed substrate-embedded seeds on the highly ordered anodic alumina template to control both the location of seeds and the number of grain boundaries intentionally. In the process of excimer laser crystallization (ELC), a-Si film deposited on the anodic alumina by low pressure chemical vapor deposition (LPCVD) is transformed into fine poly-Si grains by explosive crystallization (XC) prior to primary melting. At the higher energy density, the film is nearly completely melted and laterally grown by super lateral growth (SLG) from remained small part of the fine poly-Si grains as seeds at the Si/anodic alumina interface. Resultant grain boundaries have almost linear functions of the number of seeds in concavities of anodic alumina which have a constant spacing. It reveals the uniformity of. device can be enhanced prominently by controlling location and size of pores which contains fine poly~Si seeds under artificial anodizing condition.

• 한국레이저가공학회지
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• 제6권2호
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.119-124
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• 1999

Silicon nitride ceramics with highly oriented microstructure were prepared by tape casting a slurry containing 5 wt% of the silicon nitride whiskers. The whiskers were aligned in the casting direction and worked as seeds for the grain growth. The anisotropy was observed from the sintering shrinkage, Vickers indentation crack lengths, and XRD patterns. The cracks were much longer on the surface normal to the aligned grains than on the tape casting surface where the lateral cracks were also observed. The effect of sintering additives and the annealing treatment on the indentation crack length was examined. The sample with higher silica content had longer cracks than the one with lower silica content. The crack length anisotropy increased after annealing at 2123K.