• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.08a
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• pp.109-118
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• 2004

No.2 PCM (Pickling and tandem cold rolling mill) at Pohang works was revamped in 2003. The purpose of this project is to produce carbon and stainless steel using conventional carbon production process, rolling and annealing. This paper introduces the applied facilities and technologies of PCM which are used in production of carbon and stainless steel. To realize the main purpose of this project, POSCO have developed laser weld technology in normal carbon and special steel (stainless, high carbon and high silicon). And this report describes the method which is developed to get down the surface defect of stainless 400 series. After revamping, No.2 PCM can have competitive power in this field and can supply the special steel using carbon rolling process.

• Journal of Magnetics
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• v.1 no.1
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• pp.46-50
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• 1996

Highly oriented ${BaFe_{12}{O_{19}$ films were obtained by a KrF excimer laser ablation technique using (110)$(012){Al_2}{O_3}$(001)$(012){Al_2}{O_3}$ and $(012){Al_2}{O_3}$ substrates, respectively.The degree of alignment of more than 95% were achieved for (100) on (110)$(012){Al_2}{O_3}$ and (001)$(001){Al_2}{O_3}$ planes, and heteroepitaxial films of (114) on (012)$(012){Al_2}{O_3}$were possible to be grown with a lasing energy density of 6.67 J/$cm^2$ at an oxygen partial pressure ${PO_2}$ of 900 mTorr. The best magnetic properties were obtained from the as-deposited films at the substrate temperature of $700^{\circ}C$, and post annealing treatment was not needed to enhance the magnetic properties. Experimentally saturated magnetization ($4_pi M_S$) of 3600~3800 Gauss and coercivities $(H_c)$ of 3050~3080 Oe, which approach 85% of those of Ba-ferrite bulk composed of single domain particles, were obtained in this study.

• Journal of Magnetics
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• v.12 no.4
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• pp.144-148
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• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.315-318
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• 1999

We have proposed and fabricated the new bottom-gated polycrystalline silicon (poly-Si) thin film transistor (TFT) with a partial amorphous-Si region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the ON/OFF current ratio is increased significantly by more than three orders in the new poly-Si TFT compared with conventional poly-Si TFT. The leakage current is decreased significantly due to the highly resistive a-Si re TFTs while the ON-series resistance of the local a-Si is reduced significantly due to the considerable inducement of electron carriers by the positive gate bias, so that the ON-current is not decreased much.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.7-12
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• 2013

The $Cu_2ZnSnS_4$ (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of $300^{\circ}C$ without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to $1{\mu}m$. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.214-218
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• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.48.2-48.2
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• 2010

고효율 실리콘 태양전지 개발은 단파장의 광 응답 특성 개선을 위한 선택적 에미터 형성과 반사 손실 개선을 위한 미세 패턴 전극을 형성하는데 집중적인 연구가 진행되고 있다. 본 실험에서는 레이저 도핑된 선택적 에미터 위에 미세 패턴 Ni/Cu 도금 전극을 형성하였다. 니켈과 동 도금은 무전해 Light induced plating(LIP)으로 진행하였다. 니켈 도금 전극의 접착력 개선과 접촉저항 개선을 위해서 니켈 전극을 질소 분위기에서 열처리하여 니켈실리사이드(NiSi)를 형성하였다. 니켈 도금 두께와 니켈실리사이드 열처리 조건을 최적화하여 충실도 77.4%, 변환효율 18.5%를 달성하였다.