• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.800-807
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• 2006

To enhance the conversion speed more fast, we separate the determination process of MSB and LSB with the two independent ADC circuits of the Incremental Sigma Delta ADC. After the 1st Incremental Sigma Delta ADC conversion finished, the 2nd Incremental Sigma Delta ADC conversion start while the 1st Incremental Sigma Delta ADC work on the next input. By determining the MSB and the LSB independently, the ADC conversion speed is improved by two times better than the conventional Extended Counting Incremental Sigma Delta ADC. In processing the 2nd Incremental Sigma Delta ADC, the inverting sample/hold circuit inverts the input the 2nd Incremental Sigma Delta ADC, which is the output of switched capacitor integrator within the 1st Incremental Sigma Delta ADC block. The increased active area is relatively small by the added analog circuit, because the digital circuit area is more large than analog. In this paper, a 14 bit Extended Counting Incremental Sigma-Delta ADC is implemented in $0.25{\mu}m$ CMOS process with a single 2.5 V supply voltage. The conversion speed is about 150 Ksamples/sec at a clock rate of 25 MHz. The 1 MSB is 0.02 V. The active area is $0.50\;x\;0.35mm^{2}$. The averaged power consumption is 1.7 mW.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• The KIPS Transactions:PartC
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• v.12C no.5 s.101
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• pp.765-772
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• 2005

In this paper, we propose E-mail sending-server authorization method using a distance estimation algorithm between W addresses to check whether the E-mail sending server is registered in the domain of mail sending server or belongs to the domain for filtering spam mail. This method utilizes the distance between the IP address of sending server and IP addresses registered in the DNS to figure out that the E-mail sending server exists in the domain to filter spam mail. The experimental result of applying the proposed algorithm to sample E-mails gathered in a large size laboratory says that 88 percents of legitimate E-mails and only 10 percents of spam mails are sent by servers in the same domains of senders. The algorithm may be effectively used to block spam mails sent by servers outside of the domains of mail senders. It may be also hired as a temporary E-mail protecting system until the standard E-mail authorization protocol is fully deployed.

• Economic and Environmental Geology
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• v.56 no.6
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• pp.697-714
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• 2023

The Tracksite of Cretaceous Dinosaurs and Pterosaurs in Jeongchon, Jinju was discovered in late 2017 during the construction of the Ppuri industry complex. This site is a natural heritage site with a high paleontological value, as it preserves fossils of various types of dinosaurs, pterosaurs, and animal traces at a dense concentration. In this study, we surveyed that physical weathering such as joint, crack, scaling, exfoliation, and fragmentation occurred through field research in the fossil site, and conducted basic research on conservation science to reduce the damage. To this end, among the eight levels identified after excavation, the rocks of Level 3, which yielded a large number of theropod footprint fossils, and Level 4, which yielded pterosaur footprint fossils, were analyzed for material characteristics and evaluation of the effectiveness of consolidation and adhesion. This results showed that the rocks in the Level 3 stratum were dark gray siltstone and the rocks in the Level 4 stratum were dark gray shale, which contained a large amount of calcite and were composed of quartz, plagioclase, mica, alkali feldspar, and other clay minerals, which are likely to be damaged by rainfall under external conditions. As a result of conducting an artificial weathering experiment by dividing the probationary sample into four groups: untreated, consolidation treatment, anti-swelling treatment, and adhesive treatment, the consolidation and the swelling inhibitor showed an effect immediately after treatment, but did not show a blocking effect under a freezing-thawing environment. The adhesive showed that the adhesive effect was maintained even under freezing-thawing conditions. In order to preserve the fossil sites at Jeongchon in the future, in addition to temporary measures to block the inflow of moisture, practical measures such as the construction of protective facilities should be prepared.