• The Optical Journal
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• v.11 no.6 s.64
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• pp.60-68
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• 1999

지난 호에는 일반적인 광학부품의 제조공정을 알아보고, 제조 공정 및 특기 사항 가운데 소재선정, 소재 절단 및 blank 제작, 응력 제거, Chemical etching, Blocking을 살펴보았다. 이번 호에는 Lapping, Polishing, 세척, 측정에 대해서 기술한다.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.467-472
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• 2002

Long Carbon Nanotubes(CNTs) were cut by diamond lapping film followed by observation using SEM. The paste was prepared by mixing shortened CNT powder, ${\alpha}$-terpineol used as a solvent, and ethylcellulose as a binder. This paste was deposited on glass substrate by screen printing and extruded by syringe. After screen printing, several post-treatments were performed to control the alignment of CNTs perpendicular to the substrate. The deposited CNTs were scratched by sand paper or diamond lapping film. It was also treated by attachment followed by an immediate detachment using the adhesive tape. SEM observation indicates that excellent vertical alignment of CNTs could be achieved by simple post-treatments from the screen printed-CNTs paste. Similar alignment of CNTs is also observed in the as-extruded CNTs paste.

• Fire Science and Engineering
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• v.33 no.5
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• pp.61-65
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• 2019

In the present study, the hydrodynamic force affected by a lapping wave induced by supplied falling water acting on the vertical wall of a portable water storage tank was analyzed using a nonlinear Peregrine model. The lapping wave's maximum run-up amplitudes and the hydrodynamic forces in the wall of the tank measured by linear and nonlinear Peregrine's models were compared numerically. As a result, it was concluded that the linear model may underestimate the effects on the vertical wall; therefore, it is more appropriate to use a nonlinear Peregrine model. Furthermore, this result can contribute to the stable structural designs of portable water storage tanks.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.112-114
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• 2006

• Korean Journal of Computational Design and Engineering
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• v.20 no.3
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• pp.312-319
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• 2015

The grinding and furbishing process as the finishing process for molds include the works such as the grinding, buffing, lapping and polishing among others. A finishing tool unit is applied to this finishing process for the burr, lapping, polishing and others of molds. A finishing tool unit can carry out the flexible machining, depending on the machining allowance for objects to be cut on the basis of the instrumental driving mechanism which enables the up, down, left and right floating, which is applied in link with the dedicated cutters and robot machining systems. This study selected the shape to increase the rotatory force of an impeller when air is discharged during the driving of a finishing tool unit, and reflected it to the impeller designing. In addition, the study analyzed each flow velocity and pressure distribution per air pressurization value and finally analyzed the rotating torque to suggest the optimal conditions in designing impellers.

• Fire Science and Engineering
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• v.31 no.3
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• pp.49-53
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• 2017

In the present study, the hydrodynamic force acting on the vertical wall of a portable water storage tank is examined. A Dispersion Relation Preserving (DRP) method, proposed by Jang, is applied for simulating lapping waves and their impact on the wall. A meaningful investigation has been observed, which may be applied to the strength design for the portable water storage tank.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.152-152
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• 2009

We investigate micro-tip properties as Ni-Co plating and CMP processes for MEMS probe card and units. The micro-tip are fabricated by using Ni-Co plating machine, lapping machine, and chemo-mechanical polisher. In order to get high conductive and reliable micro-tip, we control Co contents and thickness by CMP speed. We have found that about 20-25% of Co contents are required and have to lapping speed of 30 rpm. Also, we investigate photolithography and Ni-Co plating processes conditions for the one-step and the three-step micro-tips.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.218-223
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• 2001

The chemical-mechanical polishing process was carried out for 2"-dia. sapphire wafer grown by horizontalBridgman method on the urethane lapping pad with the silica sol. The polished wafer shows the full-width at halfmaximum of 200~400 arcsec in double-crystal X-ray diffraction, indicating that the slicing, grinding and lapping processes before the polishing process affected the crystalline structural property of the wafer surface by the mechanical residual stress. For the inclusion of surface treatments after chemical-mechanical polishing such as the thermal annealing at the temperature of $1,200^{\circ}C$for 4 hrs. and chemical etching, the crystalline quality was sigdicantly enhanced with the reduced full-width at half maximum up to 8.3 arcsec.arcsec.

• Journal of the Korean Society for Precision Engineering
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• v.10 no.1
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• pp.42-51
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• 1993

Recently, WC-Co have some excellent properities as the material for the mechanical component such as metallic moulding parts, ball dies parts, and punch parts. This paper describes the surface roughness and grinding force caused by experimental study on the surface grinding of WC-Co with ultra-precision like a mirror shape using diamond wheel. Also, some investigations are carried out using WA grinding wheel to increase improved ground surface roughness such as polishing, lapping effect. Some important results obtained here are summarized as follow. 1) Within this experimental grinding condition, we can be obtained $R_{max}.\;2\mu\textrm{m}\;R_a\;0.3\mu\textrm{m}$ whichare the most favourable ground surface roughness using #140 diamond wheel, and improved surface roughness values about 20 .approx. 25% throughout 5 times sparkout grinding 2) The value of surface roughness is Rmax. $0.49\mu\textrm{m},\;R_a\;0.06\mu\textrm{m}$ using #600 diamond wheel. 3) The area of no rack zone is less than $F_{n}$ 0.27N/mm, Ft 0.009N/mm