• Membrane Journal
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• v.26 no.3
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• pp.173-178
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• 2016

In this short review, the polymer electrolyte membranes consisting of polymer and Ag salts were introduced and various approaches to solve the long-term stability were summarized. In particular, utilizing $AgNO_3$ as carriers with ionic liquid, the replacement of polymer matrix as poly(ethylene phthalate) (PEP) for strong coordinative interactions with Ag ions and the introduction of $Al(NO_3)_3$ to $polymer/AgBF_4$ complexes were introduced for long-term stable facilitated olefin transport membranes. For the polymer nanocomposite membranes, the role of electron acceptors as polarizer on the surface of AgNPs and the approach to solve the low permeance were introduced.

• Composites Research
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• v.36 no.6
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• pp.416-421
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• 2023

Multifunctional composite materials capable of both load-carrying and energy functions are promising innovative candidates for the advancement of contemporary technologies owing to their relative feasibility, cost-effectiveness, and optimized performance. Carbon fiber (CF)-based structural batteries utilize the graphitic inherent structure to enable the employment of carbon fibers as electrodes, current collectors, and reinforcement, while the matrix system is an ion-conduction and load transfer medium. Although it is possible to enhance performance through the modification of constituents, there remains a need for a systematic design methodology scheme to streamline the commercialization of structural batteries. In this work, a bi-phasic epoxy-based ionic liquid (IL) modified structural battery electrolyte (SBE) was developed via thermally initiated phase separation. The polymer's morphological, mechanical, and electrochemical characteristics were studied. In addition, the interfacial shear strength (IFSS) between CF/SBE was investigated via microdroplet tests. The results accentuated the significance of considering IFSS and matrix plasticity in designing composite structural batteries. This approach is expected to lay the foundation for realizing smart structures with optimized performance while minimizing the need for extensive trial and error, by paving the way for a streamlined computational design scheme in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.