• 대한화장품학회지
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• 제24권3호
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• pp.116-122
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• 1998

It is well known that all-trans-retinol is not only very unstable in heat, light, air, and water, but also skin-irritant despite a good anti-wrinkle effect. Therefore, it is very difficult to stabilize retinol and make the safe retinol containing cosmetics by using a certain concentration of retinol with real effect. In order to dissolve these problems and apply retinol for skin care cream, firstly retinol is to be encapsulated in the vesicle called Liposphere (pseudo-liposome) which is made by homogenizing under high pressure the mixtures of lecithin, retinol, caprylic/capric triglyceride, and hydroalcoholic solution ; and then this retinol containing Liposphere is to be intercalated in lamellar liquid crystal layer which is prepared by emulsifying in an optimal ratio the mixtures composed of non-ionic emulsifier (cetearyl glucoside, sorbitan stearate & sucrose cocoate etc), cetearyl alcohol, stearic acid, cholesterol, and ceramide. In addition, the stability of the retinol containing oil in water cream by adding the polymeric emulsifier such as acrylate /C10-30 alkyl alkylate crosspolymer is to be ensured even at 55 C. Retinol containing oil in water cream prepared through above procedure could be very stable at 45 C for at least 50 days. The structure identification of lamellar liquid crystal was determined using polarized light microscope and electron microscope Conclusively, we could make the very stable retinol containing oil in water cream by triple procedure, that is, encapsulation of retinol in Liposphere, intercalation of retinol in lamellar liquid crystal layer, and assurance of the high temperature stability of cream even at 55 C.

• Biotechnology and Bioprocess Engineering:BBE
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• 제2권2호
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• pp.117-121
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• 1997

Glutamic acid can be crystallized inside cation exchange column when displacer NaOH concentration is high enough to concentrate displaced glutamic acid beyond its solubility limit. Resulting crystal layer of glutamic acid was moved with liquid phase through the column, and thus could be eluted from the column and recovered in fraction collector. For the purpose of enhancing crystal recovery, effects of operating parameters on the crystal formation were investigated. The increase in the degree of crosslinking of resin favored crystal recovery because of its low degree of swelling. Higher concentration of displacer NaOH was advantageous. If NaOH concentration is too high, however, crystal recovery was lowered due to the solubility-enhancing effects of high pH and ionic strength. The decrease of mobile phase flow rate enhanced crystal recovery because enough time to attain local equilibrium could be provided, but film diffusion would control the overall crystal formation with extremely low flow rate. Lower temperature reduced solubility of glutamic acid and thus favored crystal formation unless the rate of ion exchange was severely reduced. The ion exchange operated by displacement mode coupled with crystallization was advantageous in reducing the burden of further purification steps and in preventing purity-loss resulted from overlapping between adjacent bands.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.472-475
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• 2005

The electrical performances of liquid crystal (LC) cells with chloromethylated polyimide (CMPI) alignment layers were investigated. The CMPI layer was previously reported as a multifunctional layer that does role of LC alignment and planarization layer as well as photo-alignment material with high photosensitivity and excellent thermal stability. The capacitance-voltage (C-V) characteristics of LC cells with CMPI alignment layers were measured. Mechanical rubbing of the CMPI layer did not generate much difference in residual DC when compared to commercial PI. However, the LC cell with photo-oxidation CMPI layer shows a high residual DC value and a corresponding low voltage holding ratio (VHR) due to the photo-induced ionic charges on the alignment layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.65-65
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• 2011

Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

• 공업화학
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• 제31권3호
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• pp.317-322
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• 2020

수산화암모늄나이트레이트(HAN; NH₃OHNO₃)는 낮은 용융점과 증기압의 특성을 가지고 있고, 상대적으로 높은 산소균형을 이루고 있는 이온성 화합물이다. 본 연구에서는 높은 함량의 액상추진제를 제조하기 위한 산화제로 활용하기 위하여 이중용매를 적용하여 고체입자상으로 얻었다. 감압 하에서 액상의 HAN으로부터 수분을 증발시킨 후, 반용매로서 아세톤과 에탄올을 적용하여 추출한 입자상의 HAN에는 13.8 wt%의 수분이 포함되어 있었다. 아세톤을 단독으로 적용하였을 때, 합성수율은 질량기준으로 최대 88%이었고, TGA로 측정된 최대 함량은 86.2%, 분해온도는 160~205℃ 범위로 나타났다.

• Korean Chemical Engineering Research
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• 제49권6호
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• pp.739-744
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• 2011

선택적환원 반응용 활성탄 촉매는 액정디스플레이 제조 공정에서 배출되는 붕소를 포함하는 배가스 중의 $NO_x$를 제거하는데 사용되는데, 붕소가 촉매의 세공을 막거나 활성점에 침적되어 촉매 비활성화가 발생하게 된다. 폐촉매는 다양한 계면활성제를 포함하는 수용액 중에서의 세정, 건조 및 소성에 의해 재생이 가능하였다. 세정 과정의 조건, 계면 활성제 종류, 소성 조건 등을 변화시키면서 재생 전과 후의 폐촉매의 물리화학적 성능 비교를 위하여 질소 흡착 실험, ICP에 의한 원소 분석을 수행하였다. 암모니아를 사용하는 선택적환원 반응은 고정층 촉매 반응기를 사용하여 $120^{\circ}C$에서 수행하였다. $90^{\circ}C$의 수용액에서 비이온 계면활성제를 사용하여 세정하고, 질소 분위기에서 $550^{\circ}C$에서 소성하여 재생한 활성탄 촉매는 붕소가 가장 많이 제거되어 신규 활성탄과 유사한 수준의 표면적과 $NO_x$ 제거 효율을 회복하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.