• Journal of the Korean Chemical Society
• /
• v.9 no.2
• /
• pp.67-70
• /
• 1965

Polarographic studies of reduction of Ni(Ⅱ)-CN complex on Hg-electrode have indicated that $Ni(CN)_4^{2-}$ is reduced by two paths, via one electron process Ni(CN)42- + e [1]↔[2] Ni(CN)43- =(eq) Ni(CN)2- + 2CN- and via two electron process Ni(CN)42- + 2e [3]→ 1/2[Ni(CN)33-]2 + CN- of which reduction [1] must be faster than reduction [3]. At very dilute cyanide concentration (0.004 to 0.01 M) cathodic wave is practically responsible for reaction [1] and two cyanide ions appear to contribute to the reaction. As increasing cyanide ion concentration the rate of oxidation reaction [2] catalysed by Hg increases and reaction [1] and [2] approach to equilibrium. Therefore, reaction [3] represents the cathodic wave at high concentration of cyanide (above 0.2 M). This mechanism can also explain the fact that limiting current at $[CN^-]$ = 8 M is approximately twice of that at 0.004 M CN.

• Proceedings of the KIEE Conference
• /
• 1998.07g
• /
• pp.2518-2520
• /
• 1998

Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.202-203
• /
• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.

• The Journal of Natural Sciences
• /
• v.7
• /
• pp.37-46
• /
• 1995

Electrochemical behavior of $Ln^{3+},$-ALC complexes($Gd^{3+},$ $Tb^{3+},$ $Dy^{3+},$ $Ho^{3+},$ $Er^{3+},$ $Yb^{3+}$ and $Lu^{3+}$-alizarin complex-one) has been investgated by d.c polarography, differential pulse polarography and cyclic voltammetry. The reduction mechanism of ALC comes to the conclusion that the two electron make one step of reversible processes, and that there is few adsorption in the electrode reaction. The new complex is made from one lanthanide ion and one ALC. This complex is proven to make an adsorptive complex wave, by the experiments of differential pulse polarography and cyclic voltammetry. The reduction potential of complex wave($P_2$)turns up more negatively than ligand wave($P_1$) does. Linear calibration curves of the decreasing P1 and increasing $P_2$ is obtained when the lanthanide concentration varys from $2.5X10^5$M to $1X10^4M$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.5
• /
• pp.362-366
• /
• 2000

$Li_{0.44}MnO_2$cathode material has high reversibility during lithium insertion processes and is not easily damaged through over-charging or over-discharging. $Mn_2O_3$is often present as an impurity phase, and reduce the electrochemical capacity of electrode because this phase is electrochemically inert. Adding of excess NaOH reduced the $Mn_2O_3$to the content under undetectable by X-ray diffraction. Because the capacity can be increased in the cathode materials with larger unit cell, some of the manganese was replaced with titanium having larger ion size, and powders with the formula $Li_{0.44}T_{iy}Mn_{1-y}O_2$(where y = 0.11, 0.22, 0.33, 0.44, and 0.55) was synthesized and characterized. A maximum reversible capacity of 150 mAh/g was obtained for $Li/P(EO)_8$LiTFSI/$Li_{0.44}Ti_{0.22}Mn_{0.78}O_2$cells in electrochemical potential spectroscopy (ECPS) experiments. Cells with the titanium-doped manganese oxides exhibited a fade rate of 0.12 % or less per cycle.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.29.1-29.1
• /
• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Korean Journal of Materials Research
• /
• v.1 no.2
• /
• pp.99-104
• /
• 1991

Trantalum thin films have been prepared by DC sputtering onto As, P, and $BF_2$-implanted ($5{\times}10^15cm^-2$) poly-silicon. The heat treatments by rapid thermal annealing(RTA) have been applied to these samples for the formation of silicides. We have studied the application possibility of Ta-silicide as gate electrode and bit line. The silicide formation and the dopant diffusion after the heat treatment were investigated by various methods, such as four-point probe, X-ray, SEM cross sectional views, ${\alpha}$-step, and SIMS, The tantalum disilicide($TaSi_2$) are formed in the temperature above $800^{\circ}C$, and grown in colummar structure. $TaSi_2$ has a good surface roughness, having range from $80{\AA}\;to\;120{\AA}$, and implanted dopants are incoporated into the $TaSi_2$ layer during the RTA temperature.

• Journal of Hydrogen and New Energy
• /
• v.3 no.2
• /
• pp.25-33
• /
• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.5
• /
• pp.525-532
• /
• 1992

Fluorine-doped YBaS12TCuS13TOS17-xTFS1yT superconducting materials with y varing two orders of magnitude form 0.02 to 2.0 have been prepared by a sol-gel process by using metal nitrate salts, sodium hydroxide and sodium fluoride. Fluorine contents have been measured using an ion-selective electrode. All fluorine doped as reactant were found to be present in the resulted samples. From the observation of XRD it has been concluded that the samples with y 0.2 formed simply the single phase of perovskite structure, whereas those with y 0.5 yielded together some compounds such as BaFS12T, YFS13T and CuO in the resulted samples. The observation of solid state S019TF NMR has been carried out in order to check whether fluorine was actually incorporated into the lattice sites, and the experimental results revealed that the mole ratio of fluorine incorporated into the lattice sites of YBaS12TCuS13TOS17-xT was approximately 0.2 per mole of the compound. Also electrical resistivity measurement indicated that onset transition temperature has the tendency to increase slightly with increasing y in the dilute region as y 0.2.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.18 no.4
• /
• pp.468-480
• /
• 1993

In this paper, at first, the characteristics of double mode SAW (DMS) resonator are analysed by applying the wave guide model and coupled mode theory to 1-port resonator. The DMS resonators (2-pole), which are arranged in a close, parallel configuration of two identical 1-port resonators on a single plate, and 4-pole DMS filters are designed and fabricated at the center frequency of 150.15 MHz with 3-dB bandwidth of 80 KHz. The empirical design characteristics are obtained from the comparison of experimental and theoretical values resulted from several fabrications, and the narrow bandpass filters are implemented on the basis of the above empirical results, which can be used to mobile communication systems. A ST-cut quartz substrate is selected for the stable temperature-frequence characteristics, and high resolution photolithography is applied to the fabrication of filter to get the fine electrode patterns.