• 한국자기학회지
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• 제11권5호
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• pp.202-210
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• 2001

자연산화 $Al_2$O$_3$층이 형성된 하부형태 터널링 자기저항 다층박막이 기본진공도 $10^{-9}$ Torr을 유지하는 UHV 챔버내에서 이온빔 스퍼터링과 dc 마그네트론 스퍼터링 법으로 증착되었다. 제작된 스핀의존터널링 (SDT) 접합소자의 최대 터널링자기저항(TMR)와 최소 접합저항과 면적곱(R$_{j}$ A) 각각 16~17%와 50-60$\Omega$$\mu\textrm{m}$$^2$이었다. 자기장하에서 열처리한 SDT접합에 대한 TMR향상과 (R$_{j}$ A) 감소의 변화는 미미하였다. 접합면적이 81$\mu\textrm{m}$$^2$에서 47$\mu\textrm{m}$$^2$까지 접합크기가 작이짐에 따라 TMR이 증가하고 (R$_{j}$ A)이 감소하는 의존성이 관찰되었다. 이러한 현상을 하부층 단자의 판흐름 저항값 의존효과와 스핀채널효과로 설명하였다.

• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 2003년도 정기총회 및 학술발표회
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• pp.55-55
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• 2003

P2X$_3$ receptor, a member of P2 purine receptors, is a ligand-gated ion channel activated by extracellular ATP as an endogenous ligand, and highly localized in peripheral and central sensory neurons. The activation of P2X3 receptor by ATP as the pronociceptive effect has been known to initiate the pain signaling involved in chronic inflammatory nociception and neuropathic pain by nerve injury, implicating the possibility of new drug development to control pains. In this study, we have developed a two electrode voltage clamp (TEVC) assay system to evaluate the inhibitory activity of several newly synthesized PPADS and a novel non-ionic antagonist against ATP activation of human P2X3 receptor. PPADS derivatives include several pyridoxine and pyridoxic acid analogs to study the effects of phosphate and aldehyde functional groups in PPADS. All new PPADS analogs were less potent than PPADS at human P2X$_3$ receptors, however, LDD130, a non-ionic analog showed potent antagonistic property with $IC_{50}$/ of 8.34 pM. In order to uncover the structure activity relationships of LDD130, and design new structural analogs, we synthesized and investigated a few structural variants of LDD130, and the results will be discussed in this presentation.

• 대한화학회지
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• 제9권2호
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• pp.67-70
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• 1965

水銀滴下電極에 있어서 Ni(II)-CN complex의 還元反應은 두가지 經路를 밟고 있는데, 一電子還元일때는 Ni(CN)42- + e [1]↔[2] Ni(CN)43- =(eq) Ni(CN)2- + 2CN- 그리고 二電子還元일 때는 Ni(CN)42- + 2e [3]--> 1/2[Ni(CN)33-]2 + CN- 이다. 反應 [1]이 反應[3]에 比하여 빠르게 일어나고 있다. $CN^-$濃度가 묽을 때 (0.004∼0.01M)의 還元波는 反應[1]에 依해 나타나며 이때 $CN^-$ 두個가 關與하게 된다. $CN^-$ 濃度가 增加하면 反應[2]는 빨라져서 反應[1]과 [2]는 平衡狀態에 到達하게 된다. $CN^-$濃度 0.2M 以上에서는 反應[3]에 依한 二電子還元으로 電極反應을 하게 되는데 이 反應機構는 $CN^-$濃度 0.004M일 때보다 8M때의 限界電流値가 約 2倍가 되는 現象도 說明할 수 있게 된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2518-2520
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• 1998

Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.

• 자연과학논문집
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• 제7권
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• pp.37-46
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• 1995

란탄족이온($Gd^{3+},$ $Tb^{3+},$ $Dy^{3+},$ $Ho^{3+},$ $Er^{3+},$ $Yb^{3+}$ 및 $Lu^{3+}$)과 alizarin complexone(ALC) 사이에 생성한 착물의 전기화학적 거동을 직류폴라로그래피, 펄스차이폴라로그래피 및 순환전압전류법으로 연구하였다. 0.1M $HOA_C-NaOA_C$ 지지전해질 용액에서, 착화제인 ALC는 2전자 1단계의 1:1의 착물을 형성하였으며 이 착물의 환원파는 펄스차이폴라로그래피 및 순환전압전류법으로 흡착성 착물파임을 확인하였다. 착물파의 환원전위는 ALC의 환원파보다 음전위에서 나타났으며 란탄족이온의 농도의 증가에 따른 ALC의 봉우리전류(PI)의 감소와 착물의 봉우리전류($P_2$)의 증가는 란탄족이온의 농도 $2.5X10^5$~$1.0X10^4M$ 범위에서 직선적으로 변화하였다.

• 한국결정성장학회지
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• 제10권5호
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• pp.362-366
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• 2000

$Li_{0.44}MnO_2$양극재료는 리튬의 삽입과정에서 높은 가역성을 가지며 과충전이나 과방전 과정에서 쉽게 손상되지 않는다. $Mn_2O_3$가 불순물로 자주 나타나며 전기화학적으로 비활성이기 때문에 전극의 전기화학적 용량을 감소시킨다. 잉여의 NaOH 첨가는 $Mn_2O_3$를 X선 회절에 검출되지 않는 정도로 낮추었다. 용량 증가는 큰 단위세포를 가지는 양극재료에서 얻어질 수 있으므로, 망간의 일부를 이온반경이 큰 티타니움으로 치환하였으며, $Li_{0.44}T_{iy}Mn_{1-y}O_2$(여기서 y = 0.11, 0.22, 0.33, 0.44, 0.55) 조성의 분말들을 합성하여 특성을 평가하였다. ECPS 실험결과 $Li/P(EO)_8$LiTFSI/$LixTi_{0.22}Mn_{0.78}O_2$전지에서 150 mAh/g 최대가역용량 값이 얻어졌다. 티타니움이 치환된 망간산화물을 사용한 전지는 충방전당 0.12 %나 그 이하의 용량감소율을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• 한국재료학회지
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• 제1권2호
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• pp.99-104
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• 1991

Ta-silicide의 게이트 전극 및 비트라인(bit line)으로의 사용가능성을 알아보기 위하여 As, P, $BF_2$가 $5{\times}10^15cm^-2$의 농도로 이온주입된 다결정 실리콘에 탄탈륨을 스퍼터링으로 증착한 후 급속 열처리로 Ta-silicide를 형성하였다. 형성된 Ta-silicide의 특성은 4-탐침법, X-rayghlwjf, SEM 단면사진과 ${\alpha}$-step으로 조사하였으며, 불순물들의 거동은 Secondary Ion Mass Spectroscopy(SIMS)로 알아보았다. $TaSi_2$의 형성은 $800^{\circ}C$에서 시작하며 $1000^{\circ}C$ 이상에서 완료됨을 알았다. 형성된 $TaSi_2$층으로 out-diffusion 하였다.

• 한국수소및신에너지학회논문집
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• 제3권2호
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• pp.25-33
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• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.