• Mass Spectrometry Letters
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• v.12 no.2
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• Analytical Science and Technology
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• v.7 no.1
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• pp.65-78
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• 1994

The herbicide mixture of 7 triazines and 9 phenoxyalkanoic acid esters was simultaneously separated and determinated with the selected ion monitoring by using gas chromatography/mass spectrometry. The extraction recoveries of those herbicides from the reagent water were studied for the organic solvent extraction(LLE) with methylene chloride. The calibration curves of them showed good linearity over the concentration range of 0.2~0.5ng/ml and the detection limits were 0.2~0.5ng/ml for 100ml of water. This analytical method could be applied to the drinking water and biological sample.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.104-111
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• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

• Analytical Science and Technology
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• v.14 no.6
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• pp.499-503
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• 2001

A new simple, rapid and sensitive gas chromatographic technique for the determination of bisphenol-A in can materials, which is the major material of epoxy resin and polycarbonate polymer, is proposed. This method is characterised by derivatization of the bisphenol-A with a acylating reagent forming the acetate derivative to optimize the chromatographic property. The detection of bisphenol-A is performed based on GC/MS (gas chromatography/mass spectrometry). Several beverages were analyzed by the proposed method for the determination of bisphenol-A Bisphenol-A was assayed the range of $0.11{\sim}11.40{\mu}g/can$ from the can materials.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

• Journal of Food Hygiene and Safety
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• v.5 no.3
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• pp.159-164
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• 1990

To detect and quantitation residual antibiotics and antibacterial agents in meats, we performed a biological assay employing the three microorganisms Bacillus subtilis ATCC 6633, Micrococcus luteus ATCC 9341, and Bacillus cereus var. mycoides ATCC 11778 for the screening purpose and developed a Gas Chromatography-mass Spectrometry(GC/MS) analysis for the confirmation and quantiation. In the biological assay (paper disk method), three test solution are used depending on the character of the residual antibiotics and antibacterial agents, follow by a simple clean up procedure which includes homogenization with Mcilvaine buffer, defatting with includes homogenization with Mcilvaine buffer, defatting with hexane, extraction with chloroform, clean-up by Sep-Pak $C_{18}$ and Bakerbond SPE carboxylic acid column. The chloroform layer is used for the analysis of sulfa agents. macrolides antibiotics and antibacterial agents, Adsorbed materials in the Sep-Pak $C_{18}$ were also employed for th analysis of penicillins and tetracyclines. Effluents from the Sep-Pak $C_{18}$ were cleaned-up one more by Bakerbond 10 SPE COOH column and employed for the analysis of aminoglycosides. In the instrumental analysis by using the GC/MSD, residual antibiotics and antibacterial agent were quantitated by selected ion monitoring (SIM) mode after derivatization. A simultaneous analysis of six residual antibiotic and antibacterial agent such as oxytetracycline, penicillin, ampicillin, choliraphenicol and thiamphenicol was developed with simple cleanup procedures revealing good recovery and reproducibility. Also, simultaneous detection of macrolides antibiotics such as erythromycin, spiramycin, and oleandomycin was developed after acid hydrolysis due to their large molecular structures. Because of the high reproducibility and selectivity of these two methods, it is very desirable that the combination of the two methods be used in the bioassay for the screening of residual antibiotics and antibacterial agent and that GC/MSD analysis be used for the confirmation and quantitation.

• Analytical Science and Technology
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• v.12 no.3
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• pp.190-195
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• 1999

The metabolism of testosterone ($17{\beta}$-hydroxy-androst-4-en-3-one) was confirmed in horse after a single intramuscular administration of testosterone cypionate (750 mg). Solvent extracts of urine obtained with enzymatic hydrolysis and methanolysis were analyzed by GC/MS after oxime t-butyldimethylsilyl (oxime-TBDMS) derivatization. The structures of four urinary metabolite after testosterone administration in horse were determined based on EI mass spectra and $5{\alpha}$-androstane-$3{\beta}$, $17{\alpha}$-diol and $5{\alpha}$-androstane-$3{\beta}$-ol-17-one as major was confirmed with authentic standard. Also the concentrations of $5{\alpha}$-androstane-$3{\beta}$, $17{\alpha}$-diol, $5{\alpha}$-androstane-$3{\beta}$, $17{\beta}$-diol, dehydroepiandrosterone (DHEA), $5{\alpha}$-androstane-$3{\beta}$-ol-17-one and testosterone were determined in the urine of normal subjects and the urine after administration. The recovery and detection limit in the most drugs were 86.3~94.7% and 1~3 ppb, respectively. Correlation coefficients for calibration were in the range of 0.984~0.999. Excretion profile of testosterone presents the rapid and large increasement up to maximum values at days 5 after administration and the slow regression. The relative ratios of testosterone, its metabolites over DHEA were determined for indication of testosterone administration in horse doping.

• Analytical Science and Technology
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• v.17 no.4
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• pp.322-336
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• 2004

The improved derivatization technique of tamoxifen metabolite in human urine is described for the acylation method that they are substituted by derivatization reagent like acyl anhydride for use of gas chromatography/mass spectrometry. The hydroxyl group of tamoxifen metabolite was derivatized by trifluoroacetic anhydride (TFAA), pentafluoroacetic anhydride (PFPA) and heptaflorobutylic anhydride (HFBA). It was investigated to the gas chromatography/mass spectrometry (GC/MS) technique use negative ion chemical ionization (NCI), positive ion chemical ionization (PCI) and electron impact (EI). In acylation of the metabolites of tamoxifen, the effective reaction temperature and time were shown to be at $50^{\circ}C$ for 30 min. The 4-hydroxytamoxifen, which is known to major metabolite of tamoxifen, was not detected in human urine, whileas the hydroxymethoxytamoxifen was detected. We thought that this result was from the single dose of tamoxifen.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.