• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Journal of Environmental Health Sciences
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• v.31 no.5 s.86
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• pp.387-397
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• 2005

In oder to understand the deposition possibility of water-soluble inorganic ions in the atmospheric fine particulates for the human respiratory tract, the mass size distribution of ion species was measured using an Anderson sampler in the Iksan during fall, 2004. Samples were analyzed for major water-soluble ions using Dionex DX-100 ion chromatograph. The size distribution of water-soluble inorganic ions in the atmospheric particulates appeared bimodal distribution, which were divided around $1-2{\mu}m$ into two groups. Mass site distribution of total ion in the coarse mode was found to be almost similar level during the sampling period, but fluctuations of mass size distribution in the fine mode were observed. Considering the mass size distribution of total ion concentrations for the respiratory deposition region, it was found that about 77.1% of total tons could be deposited in the alveolar region, and which dominated the daily variation of total ion concentrations. The concentration of total ions, which could be deposited in both the head region and the tracheobronchial region, was $3.95{\mu}g/m^3$, whereas that in the alveolar rerion was $13.28{\mu}g/m^3$. Dominant ions which could be deposited in the alveolar region were ${NO_3}{^-},\;{SO_4}^{2-}\;and\;{NH_4{^+}$, accounting for about 40%, 27% and 22% of the total ions, respectively. Although $K^+$ was approximately 3% of total ions, it was shown that most of this could be deposited in the alveolar region due to its high fraction of small size distribution originated from anthropogenic source of biomass burning. The presence of these ions in the fine mode may be of public health significance as they are very biologically harmful to health and have a high probability of being deposited in human lung tissue.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.22-27
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• 2013

Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.616-621
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• 2011

In this paper, CdS thin films, which were widely used window layer of the CdTe and the Cu(In,Ga)$Se_2$ thin film solar cell, were grown by chemical bath deposition, and effects of pH of reaction solution on the structural and optical properties were investigated. For pH<10.5, as the pH of reaction solution was higher, the deposition rate of CdS films was increased by improving ion-by-ion reaction in the substrate surface and the crystallinity of the films was improved. However, when the pH was higher than 10.5, the deposition rate was decreased because of smaller $Cd^{2+}$ ion concentration in the reaction solution. Also, the crystallinity of the films were deteriorated. The CdS films deposited at lower pH showed poor optical transmittance due to adsorbed colloidal particles, while the transmittance was improved for higher pH.

• Bulletin of the Korean Chemical Society
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• v.11 no.3
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• pp.200-205
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• 1990

Chemically modified electrodes(CMEs), based on 2-imino-1-cyclopentane-dithiocarboxylic acid (icdc) containing carbon paste, have been characterized using cyclic voltammetric techniques. Ag(I) was chemically deposited on the CMEs, and voltammograms were obtained with the electrode in a separate buffer solution. The CME surface can be regenerated with exposure to acid and reused for deposition. In 10 deposition/measurement/regenerate cycles, the linear response have been reproduced up to $1{\times}10^{-6}$ M in linear sweep voltammetry and 1${\times}$10-8 M in differential pulse voltammetry with relative standard deviation of 5.2% and 12.4%, respectiveiy. The sensitivity increased with deposition time and scanning rate, and detection limit was $1{\times}10^{-7}M\;and\;1{\times}10^{-9}M$ at 20 minutes deposition in the linear sweep voltammetry and differential pulse voltammetry, respectively. The presence of some metal ions does not influence the silver ion response. Satisfactory results were obtained for the analysis of the silver ion for a variety of reference materials without interference of Hg ion at the condition of pH = 5-6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.409-414
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• 1999

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.97-100
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• 2000

Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.117-121
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• 2000

Er-doped sodiumborosilicate glass films for waveguides amplifier were fabricated by Aerosol Flame Deposition(AFD) method. Al2O3 was added to sodium borosilicate glass films to suppress the formation of crystalline phase and control the refractive index. the formation of crystalline phase was suppressed above Al2O3 of 6 wt%. As the amount of Al2O3 increased from 2 to 12 wt% the refractive index of glass films increased lineary from 1.4595 up to 1.4710. After the core of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3＋8wt%Er2O3 was coated on the buffer layer of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3, the core was etched by reactive ion etching. The absorption spectrum of 3 cm waveguide amplifier showed two peaks of 1530 and 1550 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.97-100
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• 2000

Bi$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/. Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.22-29
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• 2002

The process of energetic deposition has been simulated by using molecular dynamics (W) simulation and kinetic Monte Carlo (KMC) simulation. The atomistic mechanisms of film growth in energetic deposition are discussed.