• 제목/요약/키워드: ion beam alignment

검색결과 124건 처리시간 0.024초

The effect of pretilt angle on viewing angle in In-Plane switching mode LCD

  • Kang, Dong-Jin;Gwag, Jin-Seog;Park, Kyoung-Ho;Yoon, Tae-Hoon;Kim, Jae-Chang;Lee, Gi-Dong;Kim, Hee;Cho, Seong-Jin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
    • /
    • pp.559-562
    • /
    • 2003
  • The effect of pretilt angle on viewing characteristics of an IPS cell is discussed. We calculated optical viewing angle in the IPS cell as function of pretilt angle from $0.5^{\circ}$ to $4^{\circ}$, so that we could confirm that low pretilt angle was profitable for wider viewing property. In order to verify the calculation, we made an IPS cell with very low pretilt angle by the alignment method using ion beam exposure. In the experiment, we confirmed that wider viewing characteristics can be achieved if lower pretilt angle was applied in IPS mode. And Ion beam alignment method was useful for low pretilt creation.

  • PDF

Annealing Behavior of Pretilt Angles on Polyimide Surface with Rubbing and Ion Beam Irradiation

  • Lee, Sang-Keuk;Lim, Ji-Hun;Oh, Byeong-Yun;Kim, Young-Hwan;Han, Jeong-Min;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
    • /
    • 제9권6호
    • /
    • pp.243-246
    • /
    • 2008
  • We have studied the liquid crystal (LC) alignment, the pretilt angle generation, and the annealing behavior for a nematic liquid crystal (NLC) on the homogeneous polyimide (PI) surfaces by using the rubbing method and the ion beam (IB) method. An excellent LC alignment of the NLC on the PI surface with rubbing and IB irradiation were observed. The pretilt angle of NLC on the homogeneous PI surface for the rubbing method is decreased from $4.5^{\circ}$ to $3.5^{\circ}$ as rubbing time is increased, that of the for the IB irradiation method is decreased from $0.5^{\circ}$ to $0.1^{\circ}$ as the time of IB irradiation is increased. After the annealing, the pretilt angles of the rubbed PI surfaces increased up to $4^{\circ}$, these of the IB irradiated PI surfaces little increased. It is considered the side chain of the rubbed PI show the its abilities of the original capacities, while the side chain of the IB irradiated PI cannot show the its abilities of the original capacities due to the IB has already destroyed the side chain of the PI.

고휘도 휴대용 디스플레이를 위한 액정소자의 폴리스타일렌 배향막에 관한 연구 (Chemically modulated polystyrene surface using various ion beam exposure time for liquid crystal alignment of high brightness mobile display)

  • 조명현;이호영
    • 한국위성정보통신학회논문지
    • /
    • 제9권3호
    • /
    • pp.22-26
    • /
    • 2014
  • 본 연구에서는 액정의 수직배향을 달성하기 위해서 특별히 제조된 폴리스타일렌 박막에 다양한 이온빔을 조사하는 방법을 사용하였다. 일반적으로 폴리스타일렌 수지는 통상의 폴리이미드 계열의 수지에 비해서 박막코팅을 하였을 때 보다 우수한 투과율을 나타내므로, 투과형 디스플레이로 사용되는 LCD의 배향막 재료로 더 적합하다고 생각되었다. 특히 고휘도이면서 저전력 사양을 달성하여야 하는 휴대용 디스플레이에서의 응용가능성이 기대되었다. 그러나, 일반적인 러빙법에 의한 배향처리에 대해서는 액정분자의 배향성이 폴리이미드 계열의 재료에 비해서 열등하여 사용되지 못하였다. 본 연구에서는 폴리스타일렌 계열의 박막재료를 배향막으로 가공함에 있어서 새로운 이온빔 조사법에 의한 비접촉식 배향법을 사용하였으며, 배향성과 액정분자의 프리틸트각 특성에 대해서 정량적인 결과를 얻을 수 있었다. 실험에서는 폴리스타일렌 수지에 이온빔의 조사시간을 15초까지 변화시키면서 액정분자의 배향성 및 프리틸트각의 특성을 측정하였다. 측정결과 스마트폰 및 휴대용 정보단말기 등의 디스플레이에 적합한 고투과율 액정표시소자의 구현이 가능하였다.

Boron Nitride Films Grown by Low Energy Ion Beam Assisted Deposition

  • Park, Young-Joon;Baik, Young-Joon;Lee, Jeong-Yong
    • The Korean Journal of Ceramics
    • /
    • 제6권2호
    • /
    • pp.129-133
    • /
    • 2000
  • Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

  • PDF

Electro-optical Characteristics of the One-side Rubbing TN-LCD on Polyimide Surface with Ion-beam Irradiation

  • Kim, Young-Hwan;Lee, Kang-Min;Kim, Byoung-Yong;Oh, Byeong-Yun;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
    • /
    • 제9권5호
    • /
    • pp.198-201
    • /
    • 2008
  • The electro-optical (EO) characteristics of the one-side rubbing twisted nematic (TN) - liquid crystal display (LCD) on the polyimide (PI) surface with one-side ion beam (IB) irradiation were successfully studied. The good LC alignment for the one-side rubbing TN-LCD on the PI surface with one-side IB irradiation was observed. The suitable transmittance-voltage curves for the one-side rubbing TN-LCD on the PI surface with one-side IB irradiation were measured. Also, the good response time characteristics of the one-side rubbing TN-LCD on the PI surface with one-side IB irradiation were measured. The fast response time can be achieved for the one-side rubbing TN-LCD on the PI surface with one-side IB irradiation.

Band Alignment at CdS/wide-band-gap Cu(In,Ga)Se2 Hetero-junction by using PES/IPES

  • Kong, Sok-Hyun;Kima, Kyung-Hwan
    • Transactions on Electrical and Electronic Materials
    • /
    • 제6권5호
    • /
    • pp.229-232
    • /
    • 2005
  • Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

Beam position measurement system at HIRFL-CSRm

  • Min Li ;Guoqing Xiao ;Ruishi Mao ;Tiecheng Zhao ;Youjin Yuan ;Weilong Li ;Kai Zhou;Xincai Kang;Peng Li ;Juan Li
    • Nuclear Engineering and Technology
    • /
    • 제55권4호
    • /
    • pp.1332-1341
    • /
    • 2023
  • Beam position measurement system can not only provide the beam position monitoring, but also be used for global orbit correction to reduce beam loss risk and maximize acceptance. The Beam Position Monitors (BPM) are installed along the synchrotron to acquire beam position with the front-end electronics and data acquisition system (DAQ). To realize high precision orbit measurement in the main heavy ion synchrotron and cooling storage ring of heavy-ion research facility in Lanzhou (HIRFL-CSRm), a series of alignment and calibration work has been implemented on the BPM and its DAQ system. This paper analyzed the tests performed in the laboratory as well as with beam based on the developed algorithms and hardware. Several filtering algorithms were designed and implemented on the acquired BPM raw data, then the beam position and resolution were calculated and analyzed. The results show that the position precision was significantly improved from more than 100 ㎛ to about 50 ㎛ by implementing the new designed filtering algorithm. According to the analyzation of the measurement results and upcoming physical requirements, further upgrade scheme for the BPM DAQ system of CSRm based on field programmable gate array (FPGA) technology was proposed and discussed.

PDMS기판에 이온빔 처리에 따른 수평 액정의 배향 연구

  • 김영환;오병윤;김병용;이원규;임지훈;나현재;서대식
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
    • /
    • pp.159-159
    • /
    • 2009
  • We characterize a flexible self-assembled liquid crystal display (LCD) fabricated from a polyimide (PI) alignment layer with polydimethylsiloxane pixel walls. Ion beam (IB) irradiation aligned LC molecules in the PI layer and bonded two flexible plastic substrates in a one-step assembly of the pixel walls. X-ray photoelectron spectroscopic analysis, Fourier transform infrared spectroscopy, and scanning electron microscopy provided chemical and physical evidence for the formation of stable chemical bonds between the PI layer and the PDMS pixel walls in addition to the important maintenance of a uniform 6 um gap between the two substrates without the use of any epoxy resins or other polymers.

  • PDF

UV 조사법을 이용한 새로운 무기박막 표면에 액정 배향 효과 (Alignment Effect of Liquid Crystal on new organics thin film using Ultraviolet Exposure method)

  • 황정연;강형구;최성호;오병윤;함문호;명재민;서대식
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
    • /
    • pp.62-65
    • /
    • 2005
  • We studied the nematic liquid crystal (NLC) alignment capability by the Ultraviolet (UV) alignment method on a-C:H thin-films, and investigated electro-optical performances of the UV aligned twisted nematic (TN)-liquid crystal display (LCD) with the UV exposure on a-C:H thin film surface. A good LC alignment by UV irradiation on a-C:H thin-film surfaces was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. The good electro-optical (EO) characteristics of the UV aligned TN-LCD was observed with oblique UV exposure on the a-C:H thin film surface for 1min.

  • PDF

이온빔 나노 패터닝을 위한 양극산화 알루미나의 이온빔 투과 (Ion Transmittance of Anodic Alumina for Ion Beam Nano-patterning)

  • 신상원;이종한;이성구;이재용;황정남;최인훈;이관희;정원용;문현찬;김태곤;송종한
    • 한국진공학회지
    • /
    • 제15권1호
    • /
    • pp.97-102
    • /
    • 2006
  • 양극 산화된 알루미나 (anodized aluminum oxide : AAO)는 균일하고 일정한 크기의 나노기공 패턴을 지니고 있다. AAO를 이온빔 나노 patterning을 위한 이온조사 시 마스크로서 이용하기 위해 AAO 나노 기공을 통과하는 이온빔의 투과율(AAO에 입사한 이온에 대한 투과이온의 양의 비)을 측정하였다. Al bulk foil을 양극 산화하여 두께가 $4{\mu}m$이고 종횡비(두께와 기공의 지름의 비)가 각각 200:1, 100:1 인 AAO를 Goniometer에 부착하여 500 keV의 $O^{2+}$ 이온빔에 대해 나노기공을 정렬시킨 후, 기울임 각에 따른 투과율을 측정한 결과, 종횡비가 200:1, 100:1 일 때 투과율은 각각 약 $10^{-8},\;10^{-4}$로 거의 이온빔이 투과하지 못하였다. 반면에 $SiO_2$ 위에 증착된 Al 박막으로 양극산화하여 종횡비가 5:1인 AAO의 이온빔 투과율은 0.67로 투과율이 현저히 향상되었다. 높은 종횡비를 갖는 AAO의 경우에는 범과 AAO 기공의 정렬이 쉽지 않은데다 알루미나의 비전도성으로 인한 charge-up 현상으로 인해 이온빔이 극히 투과하기 어렵기 때문이다. 실제로 80 keV의 Co 음이온을 종횡비 5:1인 AAO에 조사시킨 후에는 AAO 나노기공과 동일한 크기의 나노 구조체가 형성됨을 주사전자현미경(scanning electron microscopy: SEM) 관찰을 통하여 확인하였다.