• Title/Summary/Keyword: internal state manipulation

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Static Friction Compensation for Enhancing Motor Control Precision (모터 제어 정밀도 향상을 위한 정지 마찰력 보상)

  • Ryoo, Jung Rae;Doh, Tae-Yong
    • Journal of Institute of Control, Robotics and Systems
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    • v.20 no.2
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    • pp.180-185
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    • 2014
  • DC motor is a representative electric motor commonly utilized in various motion control fields. However, DC motor-based motion control systems suffer from degradation of position precision due to nonlinear static friction. In order to enhance control precision, friction model-based compensators have been introduced in previous researches, where friction models are identified and counter inputs are added to control inputs for cancelling out the identified friction forces. In this paper, a static friction compensator is proposed without use of a friction model. The proposed compensation algorithm utilizes internal state manipulation to generate compensation pulses, and related parameters are easily tuned experimentally. The proposed friction compensator is applied to a DC motor-based motion control system, and results are presented in comparison with those without a friction compensator.

Development of an efficient logic function manipulation system for solving large-scale combiation problems and its application to logic design of sequential circuits (대규모 조합문제를 해결하기 위한 효율적인 논리함수 처리 시스템의 개발과 순서회로 설계에의 응용)

  • 권용진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.8
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    • pp.1613-1621
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    • 1997
  • Many studies on internal data expression to process logic functions efficiently on computer have been doing actively. In this paper, we propose an efficient logic function manipulation system made on the Objected-Oriented manner, where Binary Decision Diagrams(BDD's) are adopted for internal data espressionof logic functions. Thus it is easy to make BDD's presenting combinational problems. Also, we propose a method of applying filtering function for reducing the size of BDD's instead of attributed bits, and add it to the mainpultion system. As a resutls, the space of address is expanded so that the number of node that can be used in the mainpulation system is increased up to 2/sup 27/. Finally, we apply the implemented system to One-Shot state assignment problems of asynchronous sequential circuits and show that it is efficient for the filtering method to reduce the size of BDD's.

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Closed form ultimate strength of multi-rectangle reinforced concrete sections under axial load and biaxial bending

  • da Silva, V. Dias;Barros, M.H.F.M.;Julio, E.N.B.S.;Ferreira, C.C.
    • Computers and Concrete
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    • v.6 no.6
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    • pp.505-521
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    • 2009
  • The analysis of prismatic members made of reinforced concrete under inclined bending, especially the computation of ultimate loads, is a pronounced non-linear problem which is frequently solved by discretizing the stress distribution in the cross-section using interpolation functions. In the approach described in the present contribution the exact analytical stress distribution is used instead. The obtained expressions are integrated by means of a symbolic manipulation package and automatically converted to optimized Fortran code. The direct problem-computation of ultimate internal forces given the position of the neutral axis-is first described. Subsequently, two kinds of inverse problem are treated: the computation of rupture envelops and the dimensioning of reinforcement, given design internal forces. An iterative Newton-Raphson procedure is used. Examples are presented.

A Compact 370 W High Efficiency GaN HEMT Power Amplifier with Internal Harmonic Manipulation Circuits (내부 고조파 조정 회로로 구성되는 고효율 370 W GaN HEMT 소형 전력 증폭기)

  • Choi, Myung-Seok;Yoon, Tae-San;Kang, Bu-Gi;Cho, Samuel
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.11
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    • pp.1064-1073
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    • 2013
  • In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.