• 제목/요약/키워드: interface washer

검색결과 4건 처리시간 0.024초

Numerical Simulation of Electro-Mechanical Impedance Response in Cable-Anchor Connection Interlace

  • Nguyen, Khac-Duy;Kim, Jeong-Tae
    • 비파괴검사학회지
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    • 제31권1호
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    • pp.11-23
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    • 2011
  • In this study, a finite element(FE) analysis on electro-mechanical impedance response of cable-anchor connection interface under various anchor force is presented. In order to achieve the objective, the following approaches are implemented. Firstly, an interface washer coupled with piezoelectric(PZT) material is designed for monitoring cable-force loss. The interface washer is a small aluminum plate on which a PZT patch is surface-bonded. Cable-force loss could be monitored by installing the interface washer between the anchor plate and the anchorage of cable-anchor connection and examining the changes of impedance of the interface washer. Secondly, a FE model for cable-anchor connection is established to examine the effect of cable-force on impedance response of interface washer. Also, the effects of geometrical and material properties of the interface washer on impedance responses under various cable-forces are investigated. Finally, validation of the FE analysis is experimentally evaluated by a lab-scale cable-anchor connection.

볼트 연결부 모니터링을 위한 다채널 무선 임피런스 센서노트와 EMI 인터페이스의 성능 분석 (Performance evaluation of EMI interface and multi-channel wireless impedance sensor node for bolted connection monitoring)

  • 윙 칵 유이;이포영;김정태
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2011년도 정기 학술대회
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    • pp.36-39
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    • 2011
  • In this paper, performance of EMI interface and multi-channel wireless impedance sensor node is evaluated for SHM on bolted connection. To achieve the objective, following approaches are implemented. Firstly, an interface washer is designed to monitor loosened bolt through the variation in EMI of interface washer due to change in preload in bolt. Secondly, a multi-channel wireless impedance sensor node based on Imote2 platform is designed for automated and cost-efficient impedance-based SHM on bolted connections. Finally, performance of the multi-channel wireless impedance sensor node and the interface washer are experimentally validated for a lab-scale bolted connection model. A damage monitoring method using RMSD index of EMI signatures is utilized to examine the strength of each individual bolted connection.

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구조용 케이블의 인장력 모니터링을 위한 무선 임피던스 센서노드 기술의 적용성에 관한 연구 (A Study on Applicability of Wireless Impedance Sensor Nodes Technique for Tensile Force Monitoring of Structural Cables)

  • 박재형;홍동수;김정태;나원배;조현만
    • 한국강구조학회 논문집
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    • 제22권1호
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    • pp.21-31
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    • 2010
  • 본 연구에서는 구조 케이블의 인장력 모니터링을 위한 무선 임피던스 센서노드를 개발하였다. 이를 위해 다음과 같은 연구가 수행되었다. 첫째, 경제적이고 자동화된 구조 케이블의 인장력 모니터링을 위한 무선임피던스 센서노드를 설계/제작 하였다. 둘째, 자동화된 인장력 모니터링을 위해 임피던스 기반 모니터링 기법을 무선 센서노드에 내장하였다. 셋째, 측정 범위가 제한적인 무선임피던스 센서노드의 한계점을 극복하기 위하여 인터페이스 와셔를 이용하는 구조케이블 인장력 모니터링 기법을 제안하였다. 마지막으로 내장형/외장형 텐던을 가지는 모형 프리스트레스트 콘크리트 거더에 대하여 무선임피던스 센서노드와 인터페이스 와셔를 이용하는 모니터링 기법의 적용성을 평가하였다.

FE-SEM Image Analysis of Junction Interface of Cu Direct Bonding for Semiconductor 3D Chip Stacking

  • Byun, Jaeduk;Hyun, June Won
    • 한국표면공학회지
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    • 제54권5호
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    • pp.207-212
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    • 2021
  • The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm2 and 3087 N/cm2. At 2303 N/cm2, the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm2, the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm2 and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.