• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.111-113
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• 1989

Recently nitrided oxides have been investigated for the application as the replacement of thermally grown oxides in the MIS devices. In this paper, nitrided oxides which were treated by the $N_2$ plasma were fabricated with the 350 $^{\circ}C$ substrate temperature, 0.2 torr chamber pressure, 250 watt RF power, 60 seem $N_2$ flow rate, 30 mins treatment time. After the UV light is radiated on the sample, it is noticed that the interface state density, $N_{ss}$, is slightly decreased. Under the UV light, the samples are stress by $\pm$DC bias. After those treatment interface state density. $N_{ss}$, is increased.

• 한국해양환경ㆍ에너지학회지
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• 제19권2호
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• pp.111-119
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• 2016

기체-액체 이상유동의 거동 시뮬레이션을 위해 Lattice Boltzmann방법(LBM)을 이용하였다. 기체-액체사이의 경계면에서 상호포텐셜 모델인 Shen-Chan방식과 Carnahan-Starling 상태방정식을 도입하였다. 또한 외력항의 처리는 Exact Difference Method를 사용하였다. 개발된 코드를 통하여 상태방정식 특성파악, 기체-액체의 상분리, 표면장력 및 기체 액체 경계면 거동 특성, Homogeneous와 Heterogeneous 캐비테이션, 기포 붕괴등의 시뮬레이션을 수행하였다.

• 열처리공학회지
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• 제11권1호
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• pp.17-26
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• 1998

Cladding of stainless steel on mild steel was prepared by diffusion bonding process. The bond strength increased with an increase of bonding temperature and time. It was also found that the bond strength increased as the surface roughness decreased. After the diffusion bonding of stainless steel-mild steel, the mild steel part near the bonded interface showed higher strength than the base steel due to the migration of chromium and nickel from stainless steel to mild steel. Carbon migration from mild steel gave effect on the formation of chromium carbides at grain boundaries of stainless steel, the fractograpohic features of the imperfectly bonded interface showed rather coarse dimples in the mild steel part and very fine dimples in the stainless steel part.

• 한국재료학회지
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• 제1권1호
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• pp.29-36
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• 1991

Pressurized Water Reactor (PWR) pressure vessels are made of forged low alloy steel plates internally clad with an austenitic stainless steel by welding to improve anti-corrosion properties. They display a characteristic behavior of dissimilar metal weld interface during post weld heat treatment (PWHT) and service at high temperature and pressure. In this Study, Metallugical structure of weld interface of SA 508 Class 3 forged steel clad with 309L, Austenitic stainless steel after PWHT was investigated. To estimate the width of the carburized/decarburized bands quantitatively, a model for carbon diffusion was proposed and a theoretical equation was derived.

• 열처리공학회지
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• 제13권3호
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• pp.170-176
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• 2000

A novel method for improving the adhesion of diamond films on cemented carbide tool inserts has been investigated. This method is based on the formation of a compositionally graded interface by developing a microrough surface structure using a pulsed laser process. Residual stresses of diamond films deposited on laser modified cemented carbides were measured as a function of substrate roughness using micro-Raman spectroscopy. The surface morphology and roughness of diamond films and cemented carbides were also investigated at different laser modification conditions. It was found that the increasing interface roughness reduced the average residual stress of diamond films, resulting in improved adhesion of diamond films on cemented carbides.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.102-104
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• 1990

In this paper, we studied and investigated as to temperature dependence of dielectric breakdown properties, and the dielectric breakdown properties, and deterioration-proof properties due to interface treatment effect. In the result, we knew that temperature dependence of dielectric breakdown strength due to filler content was decreased, identified that D.C. dielectric breakdown strength was improved at the filler content 50[%]. When the D.C. voltage was applied to the non silane and silane treated specimens deal with mechanical deterioration, the dielectric breakdown strength was improved at the 150[%].

• 열처리공학회지
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• 제4권2호
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• pp.1-8
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• 1991

The spheroidization of cold rolled lamellar pearlite in annealing at the temperatures between 600 and $700^{\circ}C$ has been studied by quantitative micrography. It was foud that the spheroidization proceeded as two stageh. The first stage was the stage of relieving the stored energy by cold work, the second was the stage of reducing the interface energy between ferrite and cementite. The spheroidization rate combining the spheroidization rate of each stages is described by the following equation : $$d(1/S)/dt=k_3{\cdot}D/_{(1/s)}\{{\sigma}V/_{(1/s)}+k_4{\cdot}{\exp}(-bt)\}$$ Where, S is the total area of the interface between ferrite and cementite per unit volume, D is the diffusion coefficient, ${\sigma}$ is the boundary energy, V is the volume fraction of the cementite, and $k_3$, $k_4$, b are constants.

• 열처리공학회지
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• 제10권1호
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• pp.55-62
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• 1997

The morphology of deformation induced dislocations in polycrystalline $Ni_3$(Al, Cr) containing $M_{23}C_6$ precipitates has been investigated in terms of transmission electron microscopy(TEM). Fine Polyhedral precipitates of $M_{23}C_6$ appeared in the matrix by aging at temperatures around 973 K after solution annealing at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After deformation at temperature below 973 K, typical Orowan loops were observed surrounding the $M_{23}C_6$ particles. At higher deformation temperatures, the Orowan loops disappeared and the morphology of dislocations at the particle-matrix interfaces suggested the existence of attractive interaction between dislocations and particles. The change of the interaction modes between dislocation and particles with increasing deformation temperature can be considered as a result of strain relaxation at the interface bet ween matrix and particles.

• 열처리공학회지
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• 제33권6호
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• pp.284-289
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• 2020

Since the dissimilar bonded interface usually consists of intermetallic compounds (IMCs) layer and cracks, their mechanical and electrical properties can be influenced by microstructure at interface between two different metals. In this study, the friction welded Cu-Al busbar, which is widely used to connect a secondary battery and their component, is selected to analyze the influence of interfacial characteristic on their tensile strength and electric conductivity. Then, the electrical characteristics of Cu busbar and Cu-Al busbar were investigated by thermal flow analysis and temperature rise test. In addition, the relationship between the maximum saturation temperature and the electrical conductivity were discussed in terms of interfacial characteristics of the friction welded Cu-Al busbar.

• 한국재료학회지
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• 제21권6호
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.