• Korean Journal of Materials Research
• /
• v.10 no.1
• /
• pp.62-68
• /
• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.22 no.2
• /
• pp.125-136
• /
• 2006

Statement of problem. The success of the bonding between electroforming gold and resin is dependent on the surface-conditioning technique but its effective technique has net been studied widely. Purpose. The purpose of the study was to evaluate the bond strength between the electroforming gold and resin with varying the surface-conditioning technique. Materials and methods. Sixty rectangular shaped metal specimens were made and one side of each specimen were gold hard plated. The sand-blasted specimens were divided into four experimental groups with fifteen specimens in each group and were treated as follows. Group 1: Silicoating (Rocatec, 3M ESPE)+ Sinfony (3M ESPE), Group 2: SR Link+ SR Adoro (Ivoclar Vivadent), Group 3: Tin plating (Microtin, Danville Engineering)+ SR Link+ SR Adoro, Group 4: Tin plating (Micro tin, Danville Engineering)+ Silicoating (Rocatec)+ Sinfony. Shear bond strength at metal-resin interface were measured using universal testing machine. Energy Dispersive x-ray analysis was done and scanning electron microscope images were taken and observed. Results and Conclusion. The following conclusions were drawn. 1. The mean shear bond strength values in order were 11.69MPa (Group 2), 22.35MPa (Group 3), 22.40MPa (Group 1) and 27.71MPa (Group 4). There was no significant difference in Group 1, Group 3 and Group 4(P>0.05). 2. In the EDX line analysis, the Au was detected on the surface of all specimen. $SnO_2$ showed on the surface of Group 2 and $SiO_2$ was detected on the surface of Group 1. 3. Increasing of roughness by sandblasting(Group 2), formation of micro-irregularities and tin crystals by electrolytic tin plating(Group 3) and formation of surface irregularities and $SiO_2$ layer(Group 1,4) were observed in SEM photo. 4. Tin plating(Group 3) and Rocatec treatment(Group 1) showed clinically effective shear bond strength(>20MPa), but when the two surface conditioning method were used together higher bond strength were achieved.

• Applied Chemistry for Engineering
• /
• v.8 no.3
• /
• pp.395-402
• /
• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.3
• /
• pp.45-54
• /
• 2000

The effect of electropolishing far stamped leadframe on the removal of the edge burr and residual stress relief was examined. The present study showed that the electropolishing could be used for enhanced surface quality of stamped leadframes. The electropolishing was performed at the condition of 60% phosphoric acid electrolyte, 5 ampere of current and 3 cm electrode gap at $70^{\circ}C$ for 2 minutes for Alloy42 type leadframe, and $50^{\circ}C$ for 1.5 minutes for C-194 type leadframe. The FWHM values from X-ray diffraction showed that residual stress of electropolished leadframe recovered to the level of as-received raw materials and surface roughness measured by using AFM tuned out to be improved by 0.079 $\mu\textrm{m}$ and 0.014 $\mu\textrm{m}$ ($R_{rms}$) far alloy 42 and C-194 type leadframes, respectively. The plated thickness using XRF showed the improved uniformity in thickness variation by 0.4~0.5 $\mu\textrm{m}$ and grain growth, which is favorable for interface adhesion, was also observed from the bake test samples. We could certify dimensional stability of leadframe with inspection by means of 3D-topography and hardness measurements.

• Korean Journal of Optics and Photonics
• /
• v.3 no.4
• /
• pp.258-265
• /
• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

• Journal of the Korean Applied Science and Technology
• /
• v.16 no.1
• /
• pp.33-40
• /
• 1999

We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-$H_2O_2$ and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-$H_2O_2$ solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-$H_2O_2$ solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-$H_2O_2$ solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-$H_2O_2$ solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-$H_2O_2$ solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the $NH_4OH-H_2O_2-H_2O$ and $HCl-H_2O_2-H_2O$ cleaning.

• Journal of the Korea Concrete Institute
• /
• v.28 no.6
• /
• pp.637-646
• /
• 2016

In this study, slant shear tests for the prism specimens strengthened with ultra-high performance fiber reinforced concrete (UHPFRC), normal- and high-strength concrete were performed to evaluate the interfacial shear strength between old and new concrete substrate. Test parameters are the roughness of surface, concrete strength, and fiber volume fraction of UHPFRC. The surface of the concrete was roughened by shot blasting. Test results showed that the adhesion bond resistance of the specimen with a roughened surface was very large compared to that of the specimen with a smooth surface. In addition, the interfacial shear strength appeared to be affected by the concrete strength rather than the fiber volume fraction. For the roughened surface by shot-blasting method, interfacial shear resistance exceeded the upper limit which is presented in current design codes even if the shear-friction reinforcements are not provided. Based on the test results, it is applicable to use the current concrete design codes to achieve the shear-friction design for the interface between conventional concrete and UHPFRC. However, for the surface which is not processed, it would be appropriate to provide additional shear-friction reinforcement.

• Journal of the Korean Ceramic Society
• /
• v.39 no.9
• /
• pp.884-889
• /
• 2002

In order to investigate the calcium phosphate forming ability of nanocrystalline $ZrO_2$ film, we prepared $ZrO_2/Si$ structure by using a chemical solution deposition with a zirconium naphthenate as a starting material. Precursor sol was spin-coated onto the (100)Si substrate and prefired at 500$^{\circ}C$ for 10 min in air, followed by final annealing at 800$^{\circ}C$ for 30 min in air. Crystallinity of the annealed film was examined by X-ray diffraction analysis. Surface morphology and surface roughness of the film were characterized by field emission-scanning electron microscope and atomic force microscope. After annealing, nanocrystalline $ZrO_2$ grains were obtained on the surface of the film with a homogeneous interface between the film and substrate. After immersion for 1 or 5 days in a simulated body fluid, formation of calcium phosphate was observed on $ZrO_2$ film annealed at 800$^{\circ}C$ by energy dispersive X-ray spectrometer. The fourier transform infrared spectroscopy revealed that carbonate was substituted into the calcium phosphate.

• Journal of Korea Water Resources Association
• /
• v.44 no.1
• /
• pp.9-22
• /
• 2011

A 1D numerical model for steady flow, based on the energy equation, was developed for natural rivers with emergent vegetations on floodplains and banks. The friction slope was determined by the friction law of Darcy-Weisbach. The composite friction factor of the each cross section was calculated by considering bottom roughness of the main channel and the floodplains, the flow resistance of vegetations, the apparent shear stress and the flow resistance caused by the momentum transfer between vegetated areas and non-vegetated areas. The interface friction factor caused by flow interaction was calculated by empirical formulas of Mertens and Nuding. In order to verify the accuracy of the suggested model, water surface elevations were calculated by using imaginary compound channels and the results of calculations were compared with that of the HEC-RAS. The sensitivity analysis was performed to confirm changed friction factors by vegetations density etc. The suggested model was applied to the reach of the Enz River in Germany, and estimated water surface elevations of the Enz River were compared with measured water surface elevations. This model could acceptably compute not only water surface elevations with low discharge but also that with high discharge. So, the suggested model in this study verified the applicability in natural rivers with emergent vegetations.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.78-78
• /
• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.