• 제목/요약/키워드: integrated circuit

검색결과 1,413건 처리시간 0.028초

IDDQ 테스팅을 위한 내장형 전류 감지 회로 설계 (Design of a Built-In Current Sensor for IDDQ Testing)

  • 김정범;홍성제;김종
    • 전자공학회논문지C
    • /
    • 제34C권8호
    • /
    • pp.49-63
    • /
    • 1997
  • This paper presents a current sensor that detects defects in CMOS integrated circuits using the current testing technique. The current sensor is built in a CMOS integrated circuit to test an abnormal current. The proposed circuit has a very small impact on the performance of the circuit under test during the normal mode. In the testing mode, the proposed circuit detects the abnormal current caused by permanent manufacturing defects and determines whether the circuit under test is defect-free or not. The proposed current sensor is simple and requires no external voltage and current sources. Hence, the circuit has less area and performance degradation, and is more efficient than any previous works. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects.

  • PDF

Silicon-based 0.69-inch AMOEL Microdisplay with Integrated Driver Circuits

  • Na, Young-Sun;Kwon, Oh-Kyong
    • Journal of Information Display
    • /
    • 제3권3호
    • /
    • pp.35-43
    • /
    • 2002
  • Silicon-based 0.69-inch AMOEL microdisplay with integrated driver and timing controller circuits for microdisplay applications has been developed using 0.35 ${\mu}m$ l-poly 4-metal standard CMOS process with 5 V CMOS devices and CMP (Chemical Mechanical Polishing) technology. To reduce the large data programming time consumed in a conventional current programming pixel circuit technique and to achieve uniform display, de-amplifying current mirror pixel circuit and the current-mode data driver circuit with threshold roltage compensation are proposed. The proposed current-mode data driver circuit is inherently immune to the ground-bouncing effect. The Monte-Carlo simulation results show that the proposed current-mode data driver circuit has channel-to-channel non-uniformity of less than ${\pm}$0.6 LSB under ${\pm}$70 mV threshold voltage variaions for both NMOS and PMOS transistors, which gives very good display uniformity.

Simulation of Microwave Integrated Circuit on Multilayered Resistive Substrats using Wave Concept Iterative Procedure

  • Akatimagool, Somsak
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2002년도 ITC-CSCC -1
    • /
    • pp.515-518
    • /
    • 2002
  • This paper presents the iterative procedure with the concept of expanded waves in the spectral and spatial domains using the fast modal algorithm. We presents its applications to microwave integrated circuits on resistive substrate. The advantage is a reduction in computation time. These calculated results are checked by comparison with the experimental and simulated results by Sonnet and Momentum program.

  • PDF

이동식 복지용구 소독을 위한 스마트 기반의 통합제어시스템 구현 (Implementation of Integration Control System Based on Smart for Moving Welfare Medical Device Disinfection)

  • 황기현
    • 한국정보통신학회논문지
    • /
    • 제18권9호
    • /
    • pp.2251-2258
    • /
    • 2014
  • 본 논문에서는 이동식 복지용구 소독을 위한 통합제어시스템을 개발하였다. 통합제어시스템은 과산화수소 증기 공급 제어회로와 저 진공을 이용한 살균 소독챔버 제어회로 및 마이크로버블을 이용한 세탁 제어회로 구성된다. 개발한 통합제어시스템에 대한 동작상태 및 통신 상태 등을 측정하기 위하여 스마트 기반의 원격 제어 및 모니터링 시스템을 구현하였다. 개발한 통합제어시스템 에 대한 성능을 평가하기 위해 실험 장치를 구현하였다. 제어회로에 대한 동작상태 및 신호 송수신 등을 측정해본 결과, 정상적으로 동작함을 알 수 있었다. 그리고 스마트 기반의 원격 제어 및 모니터링 시스템과의 연동 테스트에서 개발한 통합제어시스템이 통신상태, 센서 인터페이스 및 제어 면에서 좋은 동작성능을 보였다. 향 후 개발한 제어시스템을 실 시스템에 적용하여 그 성능을 증명하는 것이 필요하다.

태양광 모듈형 전력조절기를 위한 양방향 벅-부스트 포워드 컨버터 (Bi-Directional Buck-Boost Forward Converter for Photovoltaic Module type Power Conditioning System)

  • 김경탁;전영태;박종후
    • 전력전자학회논문지
    • /
    • 제21권4호
    • /
    • pp.335-342
    • /
    • 2016
  • This paper proposes an energy storage-assisted, series-connected module-integrated power conversion system that integrates a photovoltaic power conditioner and a charge balancing circuit. In conventional methods, a photovoltaic power conditioner and a cell-balancing circuit are needed for photovoltaic systems with energy storage devices, but they cause a complex configuration and high cost. Moreover, an imbalanced output voltage of the module-integrated converter for PV panels can be a result of partial shading. Partial shading can lead to the fault condition of the boost converter in shaded modules and high voltage stresses on the devices in other modules. To overcome these problems, a bidirectional buck-boost converter with an integrated magnetic device operating for a charge-balancing circuit is proposed. The proposed circuit has multiple secondary rectifiers with inductors sharing a single magnetic core, which works as an inductor for the main bidirectional charger/discharger of the energy storage. The secondary rectifiers operate as a cell-balancing circuit for both energy storage and the series-connected multiple outputs of the module-integrated converter. The operating principle of the cell-balancing power conversion circuit and the power stage design are presented and validated by PSIM simulation for analysis. A hardware prototype with equivalent photovoltaic modules is implemented for verification. The results verify that the modularized photovoltaic power conversion system in the output series with an energy storage successfully works with the proposed low-cost bidirectional buck-boost converter comprising a single magnetic device.

Linearized Transistor Model Based Automated Biasing Scheme for Analog Integrated Circuits

  • Lacek, Matthew;Nahra, Daniel;Roter, Ben;Lee, Kye-Shin
    • Journal of Multimedia Information System
    • /
    • 제8권2호
    • /
    • pp.143-146
    • /
    • 2021
  • This work presents an automated transistor biasing scheme for analog integrated circuits. In order to effectively bias the transistor at a desired operating point, the proposed method uses a linearized transistor circuit model along with the curve fitted expressions obtained from the pre-simulated I-V characteristics of the actual transistor. As a result, the transistor size that leads to the desired operating point can be easily determined without heavily relying on the circuit simulator, which will lead to significant design time reduction. Furthermore, the proposed method is applied to an actual amplifier circuit where the design time based on the proposed biasing method showed 10× faster than the conventional design approach using the circuit simulator.

PFC ZVT-PWM 승압형 컨버터에서 통합형 멀티칩 전력 모듈 제조를 위한 개선된 소프트 스위치 보조 공진 회로 (A Novel Soft Switched Auxiliary Resonant Circuit of a PFC ZVT-PWM Boost Converter for an Integrated Multi-chips Power Module Fabrication)

  • 김용욱;김래영;소재환;최기영
    • 전력전자학회논문지
    • /
    • 제18권5호
    • /
    • pp.458-465
    • /
    • 2013
  • This paper proposes a novel soft-switched auxiliary resonant circuit to provide a Zero-Voltage-Transition at turn-on for a conventional PWM boost converter in a PFC application. The proposed auxiliary circuit enables a main switch of the boost converter to turn on under a zero voltage switching condition and simultaneously achieves both soft-switched turn-on and turn-off. Moreover, for the purpose of an intelligent multi-chip power module fabrication, the proposed circuit is designed to satisfy several design constraints including space saving, low cost, and easy fabrication. As a result, the circuit is easily realized by a low rated MOSFET and a small inductor. Detail operation and the circuit waveform are theoretically explained and then simulation and experimental results are provided based on a 1.8 kW prototype PFC converter in order to verify the effectiveness of the proposed circuit.

Parameterized Simulation Program with Integrated Circuit Emphasis Modeling of Two-level Microbolometer

  • Han, Seung-Oh;Chun, Chang-Hwan;Han, Chang-Suk;Park, Seung-Man
    • Journal of Electrical Engineering and Technology
    • /
    • 제6권2호
    • /
    • pp.270-274
    • /
    • 2011
  • This paper presents a parameterized simulation program with integrated circuit emphasis (SPICE) model of a two-level microbolometer based on negative-temperature-coefficient thin films, such as vanadium oxide or amorphous silicon. The proposed modeling begins from the electric-thermal analogy and is realized on the SPICE modeling environment. The model consists of parametric components whose parameters are material properties and physical dimensions, and can be used for the fast design study, as well as for the co-design with the readout integrated circuit. The developed model was verified by comparing the obtained results with those from finite element method simulations for three design cases. The thermal conductance and the thermal capacity, key performance parameters of a microbolometer, showed the average difference of only 4.77% and 8.65%, respectively.

A novel integrated a-Si:H gate driver

  • Lee, Jung-Woo;Hong, Hyun-Seok;Lee, Eung-Sang;Lee, Jung-Young;Yi, Jun-Shin;Bae, Byung-Seong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
    • /
    • pp.1176-1178
    • /
    • 2007
  • A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.

  • PDF

세라믹 적층형 스위치 모듈 설계에 관한 연구 (A study on the design of switch module for devices)

  • 김인성;송재성;민복기
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
    • /
    • pp.431-434
    • /
    • 2004
  • The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

  • PDF