• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.04a
• /
• pp.64-65
• /
• 2006

We studied the nematic liquid crystal (NLC) alignment capability by the IB(on bean) alignment method on a NDLC(Nitrogen Diamond Like Carbon) as a-C:H thin film, and investigated electro-optical performances of the IB aligned IPS(In plane switching}cell with NDLC surface. A good LC alignment by IB exposure on a NDLC surface was achieved. Monodomain alignment of the IB aligned IPS cell can be observed. The goodelectro-optical (EO) characteristics of the IB aligned IPS cell was observed with oblique IB exposure on the NDLC as a-C:H thin film for 1 min.

• Korean Journal of Materials Research
• /
• v.22 no.10
• /
• pp.526-530
• /
• 2012

Silica-based ceramic-matrix composites have shown promise as advanced materials for many applications such as chemical catalysts, ceramics, pharmaceuticals, and electronics. $SiO_2$-CuO-$CeO_2$ multi-component powders and their thin film, using an oxalic acid template as a chelating agent, have larger surface areas and more uniform pore size distribution than those of inorganic acid catalysts. $SiO_2$-CuO-$CeO_2$ composite powders were synthesized using tetraethylorthosilicate, copper (II) nitrate hemi (pentahydrate), and cerium (III) nitrate hexahydrate with oxalic acid as template or pore-forming agent. The process of thermal evolution, the phase composition, and the surface morphology of these powders were monitored by thermogravimetry-differential thermal analysis (TG-DTA), X-ray diffractometry (XRD), field-emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectrometry (EDXS). The mesoporous property of the powders was observed by Brunner-Emmett-Teller surface (BET) analysis. The improved surface area of this powder template with oxalic acid was $371.4m^2/g$. This multi-component thin film on stainless-steel was prepared by sol-gel dip coating with no cracks.

• Korean Journal of Materials Research
• /
• v.6 no.1
• /
• pp.22-28
• /
• 1996

고주파 이동통신의 효용이 증가할수록 고주파 회로에 들어가는 부품들의 소형화가 중요한 과제로 대두되고 있다. 인덕터는 전자회로에 이용되는 주요 부품의 하나이며, 현재 교주파용 소형 인덕터를 박막화하려는 시도가 진행중이다. 본 연구에서 열산화시킨 Si(100)기판위에 성공적으로 박막형 인덕터를 제조하였다. Core 물질로는 ion beam sputtering 법으로 증착한 Ni-Zn 페라이트와 PECVD법으로 증착한 SiO2를 사용하였다. 고온산화분위기의 박막 증착과정을 고려하여 귀금속류인 Au를 전극으로 이용하였으며, life-off법으로 미세회로를 구현하였다. 상하부 전극의 안정적인 연결을 위하여 2차 전극배선 전에 via를 채워넣었다. 제조된 박막 인덕터의 고주파 특성은 network analyzer로 측정한 후 HP사의 Mecrowave Design System으로 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.11
• /
• pp.905-910
• /
• 2011

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.1
• /
• pp.11-14
• /
• 2000

Transparent conducting ITO thin films have been studied and developed for the solar cell substrate or LCD substrate. ITO thin film has been mostly fabricated by high cost sputtering method. In this research, sol-gel method is applied to fabricate ITO thin film at lower cost. The research is focused on the establishment of process condition and development of precursor. Organic sol was made of indium tri-isopropoxide dissolved in ethylene glycol monoethyl ether. The hydrolysis was controled by addition of acetyl acetone. Tin(IV) chloride was added as dopant. Inorganic sol was made of indium acetate dissolve din normal propanol. Spin coating technique was applied to coat ITO on borosilicate glass. The resistivity of ITO thin film was approximately $0.01\Omega{\cdot}cm$ and the transmittance is higher than $90\%$ in a visible range.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.95-95
• /
• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.64.1-64.1
• /
• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.56-56
• /
• 2010

We report a low-temperature fabrication of organic/inorganic nanohybrid dielectrics for organic thin film transistors. The self-assembled organic layers (SAOLs) were grown by repeated sequential adsorptions of C=C-terminated alkylsilane and metal (Al or Ti) hydroxyl with ozone activation, which was called "molecular layer deposition (MLD)". The $TiO_2$ and $Al_2O_3$ inorganic layers were grown by ALD, which relies on sequential saturated surface reactions resulting in the formation of a monolayer in each sequence and is a potentially powerful method for preparing high quality multicomponent superlattices. The MLD method combined with ALD (MLD-ALD) was applied to fabricate SAOLs-$Al_2O_3$-SAOLs-$TiO_2$ nanohybrid superlattices on polymer substrates at relatively low temperature. The MLD method is an ideal fabrication technique for various flexible electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.960-964
• /
• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.477-480
• /
• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).