• Journal of the Korea Society of Computer and Information
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• v.15 no.8
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• pp.59-66
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• 2010

In this paper, the internal antenna for mobile communication handset which is able to control both coupling coefficient and resonant frequency without any major modification of radiator and ground plane of antenna. Novel internal antenna with its controllable resonant frequency is presented for triple-band or over mobile handsets. The operating range can include GSM(880~960 MHz), GPS($1,575{\pm}10MHz$), DCS(1,710~1,880MHz), US-PCS(1,850~1,990 MHz), and W-CDMA(1,920~2,170 MHz). The proposed antenna is realized by combination of a half wavelength loaded line antenna and PIFA(Planner Inverted F Antenna). A single shorting and feeding points are used and they are common to both antenna structures. One of two inductors which is placed at each shorting post, one inductor is for adjusts amount of coupling, and the other controlling the resonant frequency in DCS/US-PCS/WCDMA bands. The inductance range for control of input impedance is between 0nH and 6.8nH, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.15dBi, 0.73dBi and 0.29dBi. The inductance range for control of the resonant frequency is between 1640MHz and 2500MHz, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.46dBi, 0.53dBi and 0.8dBi.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.