• Title/Summary/Keyword: indium tin oxide thin film (ITO)

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Synthesis and Characterization of Red Light-Emitting Random Copolymers

  • Lee, Yeong-Beom;Shim, Hong-Ku
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1418-1421
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    • 2009
  • A series of new light-emitting random copolymers with fully conjugated structure was prepared, for the first time through the well-known Gilch polymerization between 1,4-bis(chloromethyl)-2-ethylhexyloxy-5-methoxybenzene and 2,5-bis(bromomethyl)thiophene monomers in different ratios. The synthesized polymers (on thin film) showed the maximum wavelength of UV-visible absorbance and photoluminescence (PL) near 500 nm and near 600 nm, respectively. A single-layer light-emitting diode device, which has a simple ITO (indium-tin oxide)/polymer/Al configuration, was fabricated by spin-coating of polymers and then vacuum evaporation of Al metal. The threshold bias of PMEHPVTVs was in the range of 3.5-10 V. As in the PL spectra, the maximum wavelength of light emission near 600 nm was also shown in electroluminescence (EL) spectra of PMEHPVTVs when the operating voltage was about 7 - 14 V.

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Photocurrent Multiplication Process in OLEDs Due to a Crystalline of Hole Injection Layer of Copper(II)-phthalocyanine and a Light Irradiation (유기발광소자내 정공주입층 Copper(II)-phthalocyanine의 결정 및 광원에 따른 Photocurrent 증폭 연구)

  • 임은주;박미화;윤순일;이기진;차덕준;김진태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.622-626
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    • 2003
  • We report the electrical properties of organic light emitting diodes (OLEDs) depending on the crystal structure of hole injection layer of copper(II)-phthalocyanine(CuPc) and the light irradiation the carrier mobility of copper(II)-phthalocyanine(CuPc) of light source. OLEDs were constructed with indium tin oxide(ITO)/CuPc/triphenyl-diamin(TPD)/tris-(8-hydroxyquinoline)aluminum(Alq$_3$)/Al.Photocurrent multiplication of OLEDs was varied by the heat-treatment condition of CuPc thin film and the light irradiation.

Study on ZnO Thin Film Irradiated by Ion Beam as an Alignment Layer (배향막 응용을 위한 이온 빔 조사된 ZnO 박막에 관한 연구)

  • Kang, Dong-Hoon;Kim, Byoung-Yong;Kim, Jong-Yeon;Kim, Young-Hwan;Kim, Jong-Hwan;Han, Jeong-Min;Ok, Chul-Ho;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.430-430
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    • 2007
  • In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

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Effect of Sputtering Conditions for CdTe Thin Films on CdTe/CdS Solar Cell Characteristics (스퍼터링에 의한 CdTe 박막 제조 조건이 CdTe/CdS 태양전지의 특성에 미치는 영향)

  • Jung, Hae-Won;Lee, Cheon;Shin, Jae-Heyg;Shin, Sung-Ho;Park, Kwang-Ja
    • Electrical & Electronic Materials
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    • v.10 no.9
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    • pp.930-937
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    • 1997
  • Polycrystalline CdTe thin films have been studied for photovoltaic application because of their high absorption coefficient and optimal band energy(1.45 eV) for solar energy conversion. In this study CdTe thin films were deposited on CdS(chemical bath deposition)/ITO(indium tin oxide) substrate by rf-magnetron sputtering under various conditions. Structural optical and electrical properties are investigated with XRD UV-Visible spectrophotometer SEM and solar simulator respectively. The fabricated CdTe/CdS solar cell exhibited open circuit voltage( $V_{oc}$ ) of 610 mV short circuit current density( $J_{sc}$ ) of 17.2 mA/c $m^2$and conversion efficiency of about 5% at optimal sputtering conditions.

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Preparation and characterization of silver nanowire transparent electrodes using shear-coating (Shear-coating을 사용한 은 나노와이어 투명 전극 제조 및 특성 분석)

  • Cho, Kyung Soo;Hong, Ki-Ha;Park, Joon Sik;Chung, Choong-Heui
    • Journal of the Korean institute of surface engineering
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    • v.53 no.4
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    • pp.182-189
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    • 2020
  • Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

Spectroelectrochemical Study for Thin Film of Gold Nanoparticles (금 나노입자 박막의 분광전기화학적 연구)

  • Seo, Seong S.;Chambers, James Q.
    • Journal of the Korean Chemical Society
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    • v.50 no.1
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    • pp.32-36
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    • 2006
  • films of gold nanoparticles were formed on indium tin oxide (ITO) by an electrodeposition method from an aminosilicate stabilized gold colloid solution. The thin films were examined by cyclic voltammetry (CV), scanning electron microscopy (SEM), UV-visible, and energy dispersive X-ray spectroscopy (EDXS). The surface coverage of gold nanoparticles on the thin film was estimated to 1.2 nanomole/cm2. An anthraquinone-2, 6-disulfonic acid, disodium salt (AQDS) self-assembled layer was generated by immersing gold thin film into 1mM of AQDS in 0.1M HClO4 solution for over 20 hours. As a result, a new absorbance peak from the multi-layers (AQDS/thin film of gold /ITO) was obtained about at 690 nm. Also, the surface plasmon absorption of multi-layers was measured by UV-Visible spectrometer along with chronoamperometry by applying the various potentials from +0.5V to -0.5V. The maximum surface plasmon absorption band at 550 nm was decreased by applying negative potentials. The change of absorbance was correlated with the surface coverage of the AQDS indicating the pseudo-capacity surface state of the AQDS layer was coupled to the energy level of the plasmonband by applied negative potentials.

DC magnetron sputtering을 이용하여 증착한 ZnO 기반의 박막 트랜지스터의 특성 및 stability 향상을 위한 후열처리

  • Kim, Gyeong-Taek;Mun, Yeon-Geon;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.188-188
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    • 2010
  • 최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< 1 cm2/Vs)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide, Tin Oxide등의 산화물이 연구되고 있으며, indium이나 aluminum등을 첨가하여 전기적인 특성을 향상시키려는 노력을 보이고 있다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering를 이용하여 상온에서 제작한 후 다양한 조건에서의 후열처리를 통하여 소자의 특성의 최적화를 이루는 것을 시도하였다. 그리고 ITO를 전극으로 사용하여 bottom gate 구조의 박막 트랜지스터를 만들고 air 분위기에서 온도별, 시간별 열처리를 진행하였다. 또한 gate insulator의 처리를 통하여 thin film의 interface 개선을 통하여 소자의 성능 향상을 시도 하였다. semiconductor analyzer로 소자의 출력 특성 및 전이 특성을 평가하였다. 그 결과 기존의 a-Si 기반의 박막 트랜지스터보다 우수한 이동도의 특성을 갖는 ZnO 박막 트랜지스터를 얻었다. 그리고 이를 바탕으로 ZnO를 이용하여 대면적 적합한 디스플레이를 제작할 수 있다는 가능성을 보인다. 그리고 Temperature, Bias Temperature stability, 경시변화 등의 다양한 조건에서의 안정성을 평가하여 안정성이 향상을 확보하여 비정질 실리콘을 대체할 유력한 후보중위 하나가 될 것이라고 생각된다.

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Characteristics of Organic Light-Emitting Diodes using PECCP Langmuir-Blodgett(LB) Film as an Emissive Layer (PECCP LB 박막을 발광층으로 사용한 유기 발광 다이오드의 특성)

  • Lee, Ho-Sik;Lee, Won-Jae;Park, Jong-Wook;Kim, Tae-Wan;Dou--Yol Kang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.111-114
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    • 1999
  • Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

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ELECTROCHROMIC BEHAVIOR OF AMORPHOUS NICKELPHTHALOCYANINE THIN FILMS

  • Masui, Masayoshi;Suzuki, Masato;Kaneko, Fujio;Takeuchi, Manabu
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.735-738
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    • 1996
  • Amorphous nickelphthalocyanine(NiPc) thin films were prepared by vacuum evaporation and their electrochromic behavior and voltammograms were examined in the five kinds of aqueous electrolytes. Amorphous NiPc films were prepared on indium-tin-oxide(ITO) glass substrates cooled to-$120^{\circ}C$ by using liquid nitrogen under a vacuum of $2.4 \times 10^{-4}$. The voltammetric and electrochromic measurements were made using a potential galvanostat. In order to confirm the color change, optical vis-transmission spectra of the NiPc films were measured by a spectrophotometer with various electrode potential applied. The NiPc amorphous thin films exhibited most clearly electrochromism in $KNO_3$ aqueous electrolyte. The specimen films underwent 3 color transitions (from blue to yellow-green, then to red violet, then to dark blue), corresponding to the three peaks on the voltammograms in $KNO_3$ aqueous electrolyte. Blue is color of the as-prepared film. When the potential was swept, charge compensation was attained upon oxidation by injection of anions from the electrolyte and upon reduction by expulsion of anions.

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Transparent Rectangular Patch Antenna Using Square Metal Mesh Transparent Electrode (정방형 메탈메쉬 투명전극을 이용한 투명 사각 패치 안테나)

  • Kang, Seok Hyon;Jung, Chang Won
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.277-284
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    • 2018
  • This paper reports the transparent electrode, which would be applied to transparent displays and smart glasses. Herein, a squared metal mesh with the most widely used copper wire in microwaves is studied for the alternating thin-film-type transparent and conducting indium tin oxide(ITO), with a low conductivity(sheet resistance > $5{\Omega}/sq.$). The electromagnetic performance of a patch antenna with metal mesh is analyzed. This paper presents the results of the optical(OT, optical transparent) and electrical(sheet resistance) characteristics of a squared metal mesh, which is a basic design. To improve the OT, copper wire(w=0.2 mm) is used in fabricating the squared metal mesh and the relationship between the OT and the antenna performance(radiation gain, radiation pattern) was analyzed according to the mesh size(l=1, 2 mm). The measurement results show that the antenna performance and the optical characteristic are in inverse proportion to each other. In real applications, the optical and electrical characteristics, and the costs of production are to be considered.