• Journal of the Korean Society for information Management
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• v.20 no.3
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• pp.177-197
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• 2003

The purpose of this study is to suggest the subject and standards of evaluation on integrated IR interface. For this study, we studied the preceding research about major IR interface models. We took the survey for interface elements which were verified by experts. These interface elements are divided twe viewpoints. One is the cognitive viewpoints which are the page design, content design, site design, output form, usability and aesthelic facet. The other is the objective viewpoints which are page design, dontent design, site design, output for and usability. We found that these evaluation elements have a crediblilty.

• Journal of Adhesion and Interface
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• v.2 no.4
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• pp.24-31
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• 2001

Polypropylenes(PP) with different melt index values were mixed with ethylene-propylene rubber(EPR) or ethylene-propylene diene monomer rubber(EPDM) and an ethylene copolymer containing carboxylic acid group in a twin screw extruder. Then test specimens were prepared from the pellets of the blends with an injection molding machine. The mechanical properties and morphology of fractured surfaces were measured. Relative peak intensities of carboxylic acid group on the specimen surface were measured with an attennuated total reflection infrared spectrometer (ATR-IR) and compared with each other. The blend specimens were found to have the gradient morphology of rubber domains in PP matrix in the core region and PP skin layer. The blends containing PP of higher melt index showed greater content of ethylene copolymer containing carboxylic acid on the surface when the relative peak intensities of ATR-IR for carboxylic acid were compared. As the melt index values were increased, the decrease tendency in mechanical propeties such as tensile strength and impact strength was more significant for PP/EPR blends than PP/EPDM blends.

• Journal of Adhesion and Interface
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• v.7 no.1
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• pp.23-29
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• 2006

Polymer thin films of pentafluorostyrene (PFS) were prepared by RF plasma (13.56 MHz) polymerization in continuous wave (CW) mode, as a function of plasma power and monomer pressure. Conditions for film preparation were optimized by measuring the solvent resistance of plasma polymer thin films in DMAc, NMP, THF, acetone and chloroform, as well as by evaluating the optical clarity via UV-VIS measurements. Pulsed mode plasma polymerization was also utilized to enhance the optical properties of the films by varying the period of on-time and duty cycle. Finally, the films were subjected to refractive index measurements and analyzed by ${\alpha}$-step, TGA and FT-IR.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Journal of Adhesion and Interface
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• v.11 no.2
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• pp.50-56
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• 2010

Polyethyleneterephthalate (PET) film is widely used in various industrial fields such as mobile phone, display pannel, notebook etc. Recently PET film attached on indium tin oxide (ITO) surface has a role of high pencil hardness, high refractive index etc. So we synthesized two types of multi-functional monomer which are epoxy modifed acrylate and unmodified acrylate type using recyclable resource like phloroglucinol, derived from trinitrotoluene. We studied the effect of multi-functional monomer's chemical structure on the various properties such as refractive index, optical transmittance, and pencil hardness. We characterized synthesized multi-functional monomer by qualitative analysis through H NMR. We observed that pencil hardness of 1,3,5-triepoxide benzene and 1,3,5-triacrylate benzene they have the range of 2~3 H at high UV dosage of 300 mW. Refractive index appeared the value of 1.54~1.57. Transmittance of all multi-functional monomers has more than 93%.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.42-54
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• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.