• 대한기계학회논문집A
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• 제37권11호
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• pp.1339-1347
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• 2013

기존 단축 크리프시험에서는 천이 크리프의 영향을 무시하고 정상상태 크리프만을 고려하기 때문에 실제 크리프 특성을 나타내지 못한다. 이에 본 연구에서는 천이크리프를 고려한 압입 크리프 물성평가법을 제시한다. 다양한 재료에 대해 구형압입시험 전산모사를 이용해 크리프 물성변화에 따른 거동을 살펴보고, 크리프 특성을 무차원 변수들의 회귀식으로 표현한다. 이를 토대로 천이크리프를 고려한 압입 크리프 물성평가 프로그램을 생성했다. 제시한 물성평가 프로그램을 통해 압입 하중-변위 곡선으로부터 크리프지수, 계수값들을 각각 1.1%, 2.3% 오차범위에서 예측할 수 있다.

• 비파괴검사학회지
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• 제33권2호
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• pp.129-137
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• 2013

나노압입시험기의 힘교정과 압입자에 대한 3차원 형상 관찰 및 분석이 본 연구에서 진행되었다. 표준분동으로 교정한 마이크로밸런스로 나노압입시험기에서 발생시킨 하중을 측정하여 측정치와 발생치의 비로 압입하중을 교정하였고, 나노압입시험의 시작점인 초기 접촉 하중도 확인할 수 있었다. 삼각뿔 압입자를 원자현미경으로 관찰하여 분석한 결과 비교적 사용이력이 없는 압입자 A와 마모된 압입자 B의 첨단곡률반경은 각각 $19.71{\pm}3.03$ nm와 $1043.94{\pm}50.91$ nm로 결정되었다. 완벽한 삼각뿔 압입자 형상과 중첩하여 압입자 A와 B의 첨단무딘깊이(bluntness depth)를 1.22 nm와 64.56 nm로 결정하였고, 용해실리카 기준시편에 수행한 나노압입시험 결과를 살펴본 결과 두 압입자의 압입하중-변위곡선들이 무딘깊이 차이만큼 수평축으로 서로 어긋나 있음을 확인할 수 있었다. 수평 이동을 통해 보정된 압입곡선의 분석을 통해 개별 압입자 면적함수에 대한 고려없이 1.11 % 이내에서 동일한 용해실리카의 나노경도를 결정할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.