• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.47-47
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• 2003

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.203-213
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• 1996

In this study the subcritical crack growth behavior in an Al2O3-SiCw composite has been investigated using in situ fracture technique of applied moment double cantilever beam (AMDCB) specimens indside an SEM. This technique allows the detailed observation of whisker and grain bridging in the crack wake region. The experimental results indicated that the KI-a curve was deviated from the conventional powder law form and that the existed a region where the rate of microcrack growth was decreased with increasing the externally applied stress intensity factor. This behavior could be explained by arising crack growth resistance i.e. R-curve behavior which was associated with crack shielding due to whisker and grain bridging. The R-curve was also analyzed from the KI-a curve data in order to quantify the bridging effect in the Al2O3-SiCw composite.

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.290-296
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• 1990

Ion-surface collision studies at low kinetic energies (1-100 eV) provide a unique opportunity for investigating reactions and collision dynamics at surfaces. A special ion optics system for generating an energy- and mass-selected ion beam of this energy is designed and constructed. An ultrahigh vacuum (UHV) reaction chamber, in which the ions generated from the beamline collide with a solid surface, is equipped with Auger electron spectroscopy (AES) and thermal desorption spectrometry (TDS) as in-situ surface analytical tools. The resulting beam from the system has the following characteristics : ion current of 5-50 nA, energy spread < 2eV, current stability within ${\pm}5%,$ and unit mass resolution below 20 amu. The performance of the instrument is illustrated with data representing the implantation behavior of $Ar^+$ into a graphite (0001) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.42-42
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• 2011

본 연구에서는 광학소자에 폭넓게 이용되는 AlGaP III-V족 화합물 반도체 중에서 한쪽 끝 이 종화합물인 AlP의 유전함수를 0.75~5.05 eV의 에너지 영역에서 타원편광분석법을 이용하여 분석하였다. AlP는 산소와 급격히 반응하기 때문에, 대기 중에서 물질 고유의 광특성이 유지되기 어려울 뿐만 아니라, 박막 위에 생성되는 산화막 때문에 순수한 AlP의 유전함수 측정이 불가능 하다. 본 연구에서는 물질의 유전함수에 미치는 산화 효과를 최소화하기 위하여 Molecular Beam Epitaxy로 성장한 $1.0{\mu}m$ 두께의 AlP 박막을 초고진공 상태의 chamber 안에서 타원편광분석기를 이용하여 실시간으로 측정하였다. 박막의 투명도에 의해 나타나는 간섭 pattern과 표면거칠기 효과로 인한 유전함수의 왜곡을 보정하기 위하여 변수화 모델이 이용되었으며 다층 변수화모델 계산을 통하여 순수한 AlP의 유전함수를 얻어낼 수 있었다. 본 연구에서 측정된 순수한 AlP의 유전함수는 타원편광분석기를 이용한 최초의 실험결과로서 이차미분을 이용한 전이점 (Critical Point) 분석결과 이론적인 electronic band structure에서 $E_1$, $E_1+_{{\Delta}_1}$, $E_2$에 해당하는 전이점들을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.666-666
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• 2013

CIGS solar cell에서 p-type semiconductor역할을 수행하는 Cu(In,Ga)Se로 이루어진 Absorber layer는 4 element multi binary compound로 stoichiometry 측면에서 다양한 형태가 나타나기 때문에 태양전지 효율을 향상시키기 위해 이에 대한 연구가 활발하다. 우리는 E-beam evaporation 방법으로 다양한 조건의 multi layer로 증착된 CIG layer 위에 일정 두께의 Se을 증착하면서 열처리 조건에 따른 Selenization 메커니즘에 대한 연구를 수행하였다. 결과분석을 위해(in-situ High Temperature) XRD, XPS, Micro Raman spectroscopy, FE-SEM, (Nano Indentor, Atomic Force Microscopy) 등을 이용하여 결정구조, 결정화도, Depth profile, Eg (band gap energy) 등을 알아보고 분석결과간의 상관관계를 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.136-136
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• 2011

AlSb는 광전자 소자응용에 매우 유용한 재료이며 이를 이용한 반도체소자 설계 및 밴드갭 엔지니어링을 위해서는 화합물 반도체의 전자밴드구조를 포함한 광학적 특성이 반드시 요구된다. 본 연구는 이러한 요구의 해결방안으로서 AlSb 화합물의 유전함수 온도의존성을 0.7~5.0 eV의 에너지 영역에서 타원편광분석법을 이용하여 분석하였다. AlSb는 산소와 급격히 반응하기 때문에, 대기 중에서 물질 고유의 광특성이 유지되기 어려울 뿐만 아니라, 박막 위에 생성되는 산화막 때문에 순수한 AlSb의 유전함수 측정이 불가능하다. 따라서 박막의 산화 효과를 최소화하기 위하여 초고진공 상태의 molecular beam epitaxy 챔버 안에서 800 K의 온도로 성장한 1.5 ${\mu}m$ 두께의 AlSb 박막을 상온 300 K 까지 온도를 단계적으로 변화시켜가며 타원편광분석기를 이용하여 실시간으로 측정하였다. 각 온도에서 측정된 AlSb의 유전함수를 2차 미분하여 전이점(critical point)을 분석한 결과 $E_0$, $E_0+{\Delta}_0$, $E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2+{\Delta}_2$에 해당하는 각 전이점들의 온도 의존성을 확인할 수 있었다. 실험에서 측정된 특정 온도를 포함하여 임의의 온도에서의 AlSb의 유전함수를 유도하기 위하여 변수화모델을 사용하였고 이를 통하여 각 변수들의 온도 의존 궤적을 분석하였다. 2차 미분법을 이용한 전이점들의 온도의존성 분석결과를 기준으로 변수화 모델링을 진행하였으며 그 결과 각 온도에서 실제 유전함수와 근소한 차이를 갖는 AlSb의 유전함수 모델을 만들 수 있었다. 따라서 본 연구결과는 반도체 물성에 대한 학술적 측면뿐 아니라 고온에서의 소자공정 실시간 모니터링 및 반도체 소자 설계 등의 산업적 측면에서 매우 유용하게 사용될 것으로 기대된다.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.155-161
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• 2000

BN films composed of c-BN(70%) and h-BN(30%) phases have been synthesized by the ion beam assisted deposition (IBAD) process and stabilized by post-annealing. Boron was e-beam evaporated at 1.2 $\AA$/sec and nitrogen was ionized and accelerated at about 100 eV by the end-hall type ion gun. Substrates were negatively biased by DC 400 and 500 V, respectively, and heated at $700^{\circ}C$. Synthesized BN films were in-situ post-annealed at 700 or $800^{\circ}C$, respectively, for 1 hr without breaking vacuum. BN films without post-annealing were peeled off from substrates immediately when they were exposed to the air while those with post-annealing at $800^{\circ}C$ were stabilized. Post annealing reduced the film stress from 4.9 GPa to 3.4 GPa, but no considerable stress release in the c-BN phase was observed, contrary to previous reports that the stress relaxation in the c-BN phase is the main mechanism for the stabilization. Structural and chemical relaxation of non c-BN phase is supposed to be responsible for the film stress reduction and, in turn, stabilization, especially when the c-Bn content of the film is not high.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.5-5
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• 2011

The research and development of hybrid electric vehicle (HEV), plug-in hybrid electric vehicle (PHEV) and electric vehicle (EV) are intensified due to the energy crisis and environmental concerns. In order to meet the challenging requirements of powering HEV, PHEV and EV, the current lithium battery technology needs to be significantly improved in terms of the cost, safety, power and energy density, as well as the calendar and cycle life. One new technology being developed is the utilization of composite cathode by mixing two different types of insertion compounds [e.g., spinel $LiMn_2O_4$ and layered $LiMO_2$ (M=Ni, Co, and Mn)]. Recently, some studies on mixing two different types of cathode materials to make a composite cathode have been reported, which were aimed at reducing cost and improving self-discharge. Numata et al. reported that when stored in a sealed can together with electrolyte at $80^{\circ}C$ for 10 days, the concentrations of both HF and $Mn^{2+}$ were lower in the can containing $LiMn_2O_4$ blended with $LiNi_{0.8}Co_{0.2}O_2$ than that containing $LiMn_2O_4$ only. That reports clearly showed that this blending technique can prevent the decline in capacity caused by cycling or storage at elevated temperatures. However, not much work has been reported on the charge-discharge characteristics and related structural phase transitions for these composite cathodes. In this presentation, we will report our in situ x-ray diffraction studies on this mixed composite cathode material during charge-discharge cycling. The mixed cathodes were incorporated into in situ XRD cells with a Li foil anode, a Celgard separator, and a 1M $LiPF_6$ electrolyte in a 1 : 1 EC : DMC solvent (LP 30 from EM Industries, Inc.). For in situ XRD cell, Mylar windows were used as has been described in detail elsewhere. All of these in situ XRD spectra were collected on beam line X18A at National Synchrotron Light Source (NSLS) at Brookhaven National Laboratory using two different detectors. One is a conventional scintillation detector with data collection at 0.02 degree in two theta angle for each step. The other is a wide angle position sensitive detector (PSD). The wavelengths used were 1.1950 ${\AA}$ for the scintillation detector and 0.9999 A for the PSD. The newly installed PSD at beam line X18A of NSLS can collect XRD patterns as short as a few minutes covering $90^{\circ}$ of two theta angles simultaneously with good signal to noise ratio. It significantly reduced the data collection time for each scan, giving us a great advantage in studying the phase transition in real time. The two theta angles of all the XRD spectra presented in this paper have been recalculated and converted to corresponding angles for ${\lambda}=1.54\;{\AA}$, which is the wavelength of conventional x-ray tube source with Cu-$k{\alpha}$ radiation, for easy comparison with data in other literatures. The structural changes of the composite cathode made by mixing spinel $LiMn_2O_4$ and layered $Li-Ni_{1/3}Co_{1/3}Mn_{1/3}O_2$ in 1 : 1 wt% in both Li-half and Li-ion cells during charge/discharge are studied by in situ XRD. During the first charge up to ~5.2 V vs. $Li/Li^+$, the in situ XRD spectra for the composite cathode in the Li-half cell track the structural changes of each component. At the early stage of charge, the lithium extraction takes place in the $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component only. When the cell voltage reaches at ~4.0 V vs. $Li/Li^+$, lithium extraction from the spinel $LiMn_2O_4$ component starts and becomes the major contributor for the cell capacity due to the higher rate capability of $LiMn_2O_4$. When the voltage passed 4.3 V, the major structural changes are from the $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component, while the $LiMn_2O_4$ component is almost unchanged. In the Li-ion cell using a MCMB anode and a composite cathode cycled between 2.5 V and 4.2 V, the structural changes are dominated by the spinel $LiMn_2O_4$ component, with much less changes in the layered $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component, comparing with the Li-half cell results. These results give us valuable information about the structural changes relating to the contributions of each individual component to the cell capacity at certain charge/discharge state, which are helpful in designing and optimizing the composite cathode using spinel- and layered-type materials for Li-ion battery research. More detailed discussion will be presented at the meeting.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].