• 제목/요약/키워드: in-plane switching

검색결과 223건 처리시간 0.029초

IPS-LCD의 전압-투과율 히스테리시스법을 이용한 잔류 DC 전압 특성 (Residual DC Voltage Property in the In-plane Switching Cell Using the Voltage-transmittance Hysteresis Method)

  • 김향율;서대식;김재형
    • 한국전기전자재료학회논문지
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    • 제14권6호
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    • pp.487-490
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    • 2001
  • Residual DC voltage of the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method was studied. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.

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초고속 포인터 스위칭 패브릭의 설계 (Design of High-speed Pointer Switching Fabric)

  • 류경숙;최병석
    • 인터넷정보학회논문지
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    • 제8권5호
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    • pp.161-170
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    • 2007
  • 본 논문은 데이터 메모리 평면과 스위칭 평면을 분리하여 패킷 데이터의 저장과 메모리 주소 포인터의 스위칭이 병렬적으로 처리 가능하며 IP 패킷의 가변 길이 스위칭이 가능한 새로운 스위치 구조를 제안한다. 제안한 구조는 기존 VOQ방식의 복잡한 중재 알고리즘이 필요 없으며 출력 큐 방식의 스위치에서만 적용되고 있는 QoS를 입력 큐에서 고려한다. 성능분석 결과 제안한 구조는 기존의 공유 메모리 기반의 구조들에 비해 상대적으로 낮은 평균 지연 시간을 가지며 스위치의 크기가 증가하더라도 일정한 지연 시간을 보장함을 확인하였다.

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카본나노튜브가 액정의 물성과 in-plane switching 셀의 전기광학 특성에 미치는 영향 (Carbon nanotube effects on physical properties of liquid crystal and electro-optic characteristics of in-plane switching liquid crystal cell)

  • 전상연;정석진;정석호;신승환;안계혁;강훈;김경진;이승희;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.47-48
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    • 2006
  • Carbon nanotubes (CNTs)-doped homogeneously aligned nematic liquid crystal (LC) cells driven by in-plane field were fabricated and their electro-optic characteristics were investigated. Effective cell retardation values in an absence of an electric field between doped and undoped LC were the same each other. In the presence of an electric field, however, measured effective cell retardation value was smaller in the CNT-doped cell than in the undoped cell so that the transmittance was slightly smaller in the CNT-doped cell than in the undoped cell. In addition, the CNT-doped cell exhibited slight increase in driving voltage and decrease in response time compared to the undoped cell. The CNT effects on electro-optic characteristics of the cell were discussed.

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3-D FEM Study on the Optical Characteristics of S-IPS Mode

  • Yang, Seung-Su;Park, Soon-Yeol;Won, Tea-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.231-234
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    • 2008
  • In this paper, we propose a novel electrode structure for superb transmittance in super in-plane switching (S-IPS) mode while keeping the features of the conventional SIPS mode such as the capability of initial LC alignment. The optimization of the electrode made it possible to enhance the light transmittance approximately by 14 % in comparison to the conventional S-IPS cell.

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Advanced Optical Configuration for Transmissive and Reflective Mode in the In-Plane Switching LC cell

  • Kim, Kyung-Mi;Lee, Gi-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.101-104
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    • 2007
  • We propose a novel optical configuration for transmissive and reflective mode in the IPS LC cell to improve the viewing angle characteristics in a diagonal direction. The optical design was performed on a Poincar$\dot{e}$ sphere. From the calculation, we confirmed that the proposed configuration provides excellent viewing angle characteristics.

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A High Quality Fringe-Field Switching Display for Transmissive and Reflective Type

  • Lee, Seung-Hee;Choi, Soo-Han
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.5-6
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    • 2000
  • Fringe-field switching (FFS) technology exhibiting a high image quality has been developed. In this paper, one pixel concept, manufacturing process, materials, and electro-optic characteristics of FFS mode comparing with conventional in-plane switching mode, and its possible application to reflective type will be discussed.

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Fabrication of cholesteric LCD using the IPS switching

  • Kim, Sang-Kyung;Park, Jin-Seoul;Kang, Dae-Seung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.803-805
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    • 2006
  • In the paper we have proposed a fabrication method for color reflective cholesteric LCD by an in-plane switching. By applying an in plane electric field, the cholesteric helix could be partially unwound, which lead to shift of selective reflection and exhibition of color change.

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Transflective Liquid Crystal Display of In-Plane Switching (IPS), Using Patterned Retarder on the Side of the Upper Substrate

  • Hong, Hyung-Ki;Shin, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.822-825
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    • 2006
  • We propose a transflective In-Plane Switching mode in which patterned retarder is placed only on the reflective area of the upper substrate side. By selecting optic axes of Half Wavelength Plate and Liquid Crystal as 24 and 90 degree with respect to polarizer, condition of low reflectance for visible wavelength range at black state is found.

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Effect of NiO spin switching on the Fe film magnetic anisotropy in epitaxially grown Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems

  • 김원동;박주상;황찬용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.366-366
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    • 2010
  • Single crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by Low Energy Electron Diffraction (LEED), Magneto-Optic Kerr Effect (MOKE), and X-ray Magnetic Linear Dichorism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spins switch from out-of-plane direction in Fe/NiO/MgO(001) to in-plane direction in Fe/NiO/Ag(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a 90o-coupling between the in-plane NiO spins and the in-plane Fe spins which causes a switching of the NiO spins during the Fe magnetization reversal.

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