• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.123-123
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• 2010

투명전극 물질인 ITO는 가시광선 영역에서 높은 투과율과 낮은 전기저항을 나타내어 OLED, PDP, LCD등 다양한 분야에서 널리 사용되는 물질이다. 하지만 차세대 조명으로 개발이 확대되고 있는 OLED 조명 등 더 많은 분야에 적용하기 위해서는 많은 개선점이 필요하다. 특히 픽셀 구조가 아닌 OLED 조명의 경우 ITO의 저항에 의해 전압 강하가 발생하여 휘도 불균일, 발열 등의 문제가 발생할 수 있다. 이 때문에 보다 우수한 전기적인 특성과 높은 투과율을 갖는 투명전극이 필요하다. 현재 이러한 문제점을 개선하기 위해 ITO 박막 내부에 얇은 금속 층을 삽입하여 다층 박막으로 증착하는 연구가 활발히 진행되고 있다. 본 연구에서는 기존의 투명 전극인 ITO 대신 ITO 중간에 Ag를 삽입한 3층 박막인 ITO/Ag/ITO와 5층 박막인 ITO/Ag/ITO/Ag/ITO를 투명 전극으로 대체하였을 때 수반되는 전기적, 광학적 특성을 알아보고자 한다. 또한 열처리 조건을 다르게 하여 열처리에 따른 다층 박막의 특성 변화도 비교해보았다. In-line 형태의 RF-DC sputter를 이용하여 다층박막을 증착시킨 후 Oven과 Vacuum Oven에 열처리를 하여 특성을 알아보았다. 전기적 특성을 알아보기 위해 4-point probe를 이용하여 비저항을 측정하였고, UV-VLS spectrometer를 이용하여 투과율을 측정하였다. 또한, Atomic force microscopy(AFM)을 이용하여 표면 형상을 측정하였다.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.71-79
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• 1995

For the fabrication of high sensitive intrinsic fiber optic Fabry-Perot interferometeric sensor, the deposition conditions of $TiO_{2}$ thin film used to the internal mirrors of the sensor were investigated. The $TiO_{2}$ film deposited by RF magnetron sputter had higher refractive index ($2.36{\sim}2.48$) and better stoiciometry (O/Ti = 2) than that deposited bye-beam evaporator. In the case of forming $TiO_{2}$ internal mirror by using fusion splicing technique, the $TiO_{2}$ reflection mirror deposited by RF magnetron sputter in the condition of 120W RF power showed high. reflectance and excellent controllability of reflection power. The fabricated intrinsic fiber optic Fabry-Perot interferometer with two $TiO_{2}$ internal mirrors deposited under the condition showed very stable fringe patterns. It is, therefore, expected that the interferometer will be applicable to various high precision sensors.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.601-606
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• 2000

Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.119-125
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• 2013

In this study, we studied the properties of ZnO(Al) and ZnO(AlGa) thin film according to film thickness deposited on SLG by In-line magnetron sputtering system. XRD, FESEM, 4-point probe, Hall measurement system and UV/Vis-NIR spectrophotometer were employed to analyze the properties of ZnO(Al) and ZnO(AlGa) thin film. The all films exhibited (002) preferential orientation with clear peak shape and high intensity. The carrier concentration and Hall mobility of ZnO(Al) and ZnO(AlGa) thin film were improved with increasing thickness. The resistivity of both films decreased when the film thickness was raised from 500 nm to 1,450 nm. And then relatively the resistivity of ZnO(AlGa) film was lower than that of ZnO(Al) film. The transmittance of the films decreased with increasing film thickness but all films exhibited optical transmittances of over 83.3% in the visible region.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.292-292
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• 2012

현재 투명전극은 주로 ITO를 사용하고 있으며, ITO는 인듐산화물(In2O3)과 주석산화물(SnO2)이 9대 1의 비율로 혼합된 화합물로 인듐이 주성분이다. 따라서 ITO 사용량의 증가는 인듐의 수요 증가를 이끌어 2003년 이후 인듐 잉곳의 가격이 급등하였다. LCD에 응용되는 금속재료의 가격추이를 비교해보면, 인듐이 가장 큰 변화를 보이고 있으며, 2005년 인듐 가격은 2002년 대비 1,000% 이상 상승하였다가 2007년 이후 500%p 하락하여 2008년 2월 22일 기준으로 톤당 49만 달러에 거래되고 있다. 같은 기간 동안 알루미늄의 가격은 76.6% 상승하였으며 구리는 394%, 주석은 331% 상승하였다. 이러한 인듐의 가격 상승폭은 동일한 기간 동안 다른 금속 재료와 비해 매우 크며, 단위 질량당 가격도 20배 이상 높은 수준이다. ITO의 주성분인 인듐의 이러한 가격의 급등 및 향후 인듐의 Shortage 예상으로 인해 ITO 대체재 확보의 필요성이 증가되고 있다. 태양광 발전산업에서 현재 주류인 결정질 실리콘 태양전지의 변환효율은 꾸준히 향상되고 있으나, 태양전지의 가격이 매년 서서히 하강되고 있는 실정에서 결정질 실리콘 가격의 상승 등으로 고부가 가치 산업유지에 어려움이 있으며, 생산 원가를 낮출 수 있는 태양전지 제조기술로는 2세대 태양전지로 불리는 박막형이 현재의 대안으로 자리매김하고 있으며, 박막태양전지 산업분야가 현재의 정부정책 지원 없이 자생력을 갖추고 또한 시장 경쟁력을 확보하기 위해서는 박막태양전지 개발과 더불어 저가의 재료개발도 시급한 상황이다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리기판 위에 박막태양전지용 투명전도성 ZnO(Al) 박막을 제작하였고, 특히 이 박막은 n-형 반도체 특성을 가져야하기 때문에 홀이동도와 개리어농도의 상관관계 및 박막의 두께, 광투과율 특성, 온도 의존성을 조사하였고, 이를 논하고자 한다. (본 연구는 중소기업청의 기술혁신개발사업 연구지원금으로 이루어졌음).

• The Journal of Advanced Prosthodontics
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• v.1 no.1
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• pp.56-61
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• 2009

STATEMENT OF PROBLEM. The success of titanium implants is due to osseointegration or the direct contact of the implant surface and bone without a fibrous connective tissue interface. PURPOSE. The purpose of this study was to evaluate the osteoblast precursor response to titanium-10 tantalum-10 niobium(Ti-Ta-Nb) alloy and its sputtered coating. MATERIAL AND METHODS. Ti-Ta-Nb coatings were sputtered onto the Ti-Ta-Nb disks. Ti6-Al-4V alloy disks were used as controls. An osteoblast precursor cell line, were used to evaluate the cell responses to the 3 groups. Cell attachment was measured using coulter counter and the cell morphology during attachment period was observed using fluorescent microscopy. Cell culture was performed at 4, 8, 12 and 16 days. RESULTS. The sputtered Ti-Ta-Nb coatings consisted of dense nanoscale grains in the range of 30 to 100 nm with alpha-Ti crystal structure. The Ti-Ta-Nb disks and its sputtered nanoscale coatings exhibited greater hydrophilicity and rougher surfaces compared to the Ti-6Al-4V disks. The sputtered nanoscale Ti-Ta-Nb coatings exhibited significantly greater cell attachment compared to Ti-6Al-4V and Ti-Ta-Nb disks. Nanoscale Ti-Ta-Nb coatings exhibited significantly greater ALP specific activity and total protein production compared to the other 2 groups CONCLUSIONS. It was concluded that nanoscale Ti-Ta-Nb coatings enhance cell adhesion. In addition, Ti-Ta-Nb alloy and its nanoscale coatings enhanced osteoblast differentiation, but did not support osteoblast precursor proliferation compared to Ti-6Al-4V. These results indicate that the new developed Ti-Ta-Nb alloy and its nanoscale Ti-Ta-Nb coatings may be useful as an implant material.