• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.203-206
• /
• 1998

Effects of types of semicon compounds on electrical properties of XLPE were investigated. The amounts of charge of XLPE were changed with the contents of additive included in semicon electrodes, but homocharge in cathode was observed. In the aging experiment under high voltage, it was found that semiconductive layer with high impurity contents played an important role in the decrease of ACBD strength of XLPE.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.795-798
• /
• 2003

Inside of working PDP, there exist highly reactive conditions in the gap between two glass panels. MgO layer and phosphor have been investigated as a function of discharge and temperature. A drastic reduction in carbon impurity was observed on the surfaces after discharging and heat treatment. Carbon composition on the MgO and phosphor is a dominant factor for their instability

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.377-377
• /
• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Journal of the Korean Institute of Telematics and Electronics
• /
• 제21권4호
• /
• pp.58-64
• /
• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

• Journal of the Semiconductor & Display Technology
• /
• 제12권2호
• /
• pp.45-50
• /
• 2013

This paper focuses on the fundamental issues for improving the efficiency and throughput of the AC PDP (Plasma Display Panel) manufacturing. The properties of the MgO protective layer affect the PDP efficiency. Especially, the secondary electron emission efficiency was affected on the deposition rate of MgO during the evaporation. In this study, the deposition rate of 5 $\AA$/s has given the maximum efficiency value of 0.05 It is demonstrated that the impurity gases such as $H_2O$, $CO_2$, CO or $N_2$, and $O_2$ can be remained inside the PDP panel before sealing and the amount of the impurity gases decreased rapidly as the base vacuum level increased, especially near $10^{-5}$ torr. The fundamental solution in order to overcome these problems is the vacuum in-line sealing process from the MgO evaporation to the final sealing of the panel without breaking the vacuum. We have demonstrated this fundamental process technology and shown the feasibility. The firing voltage was reduced down to 285 V at the base vacuum value of $10^{-6}$ torr, whreras it was about 328 V at the base vacuum value of $10^{-3}$ torr.

• Clean Technology
• /
• 제12권3호
• /
• pp.157-164
• /
• 2006

In order to purify 2-methylnaphthalene as main impurity included in naphthalene, SLE (solid-liquid equilibria) on two components system including naphthalene and 2-methylnaphthalene were measured and a layered melt crystallization has been studied. SLE in the present system is shown a simple eutectic mixture and the experimental results using DSC method is similar to the static method. Purity and yield of naphthalene in crystal depended mainly on the cooling rate: Increasing cooling rate, the purity of naphthalene in crystal increase, whereas the yield of that decrease. The effective distribution coefficient (Keff) as the degree of impurity removal was observed to decrease with decreasing of cooling rate. Therefore, the purity of naphthalene by melt crystallization can be enhanced to 5~7 %.

• Clean Technology
• /
• 제13권1호
• /
• pp.72-78
• /
• 2007

As a basic research fur the separation of effective components included in pyrolysis gas oil, the crystallization on each system of naphthalene with 2-methylnaphthalene, indene and 1-methylnaphthalene as impurity has been carried out in column and cold-finger type crystallizer, respectively. In crystallization operation, the purity of naphthalene has been a tendency of increase with decreasing of cooling rate and in the presence of impurity with lower melting point. In comparison of crystallizer types, naphthalene purity in column type crystallizer was a higher value than that in cold-finger type due to effective sweating operation after crystallization.

• Korean Journal of Crystallography
• /
• 제6권2호
• /
• pp.111-117
• /
• 1995

TiO2 thin films were prepared on a (100)silicon wafer using a chemical vapor deposition(CVD) method. The deposition experiments were performed using the TTIP in the deposition temperature ransing from 200 content. The deposition rate of TiO2 was increased with the substrate temperature and the oxygen content. The thickness of the deposited thin film and the compositional analysis of this thin films with theoxygen content were measured using Ellipsometry, SEM and ESCA, respectively. The deposited thin film was composed of a bilayer, external TiO2 and internal Ti. Carbon as a residual impurity was found to remain when zero sccm O2 was purged into a reaction chamber and the composition of the deposited thin film was found to change Ti into TiO in a deeper layer. However, when 600sccm O2 was supplied to a reaction chamber, it has been found to reside less carbon content than without O2. Finally, in the condition of 1200sccm O2, no impurity level of carbon was observed and a deeper layer consisted of the Ti composite, even though the deposited surface was composed of TiO2.

• Korean Journal of Metals and Materials
• /
• 제50권9호
• /
• pp.659-667
• /
• 2012

Alloy 617 is a Ni-base superalloy and a candidate material for the intermediate heat exchanger (IHX) of a very high temperature gas reactor (VHTR) which is one of the next generation nuclear reactors under development. The high operating temperature of VHTR enables various applications such as mass production of hydrogen with high energy efficiency. Alloy 617 has good creep resistance and phase stability at high temperatures in an air environment. However, it was reported that the mechanical properties decreased at a high temperature in an impure helium environment. In this study, high-temperature corrosion tests were carried out at $850^{\circ}C-950^{\circ}C$ in a helium environment containing the impurity gases $H_2$, CO, and $CH_4$, in order to examine the corrosion behavior of Alloy 617. Until 250 h, Alloy 617 specimens showed a parabolic oxidation behavior at all temperatures. The activation energy for oxidation in helium environment was 154 kJ/mol. The SEM and EDS results elucidated a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbides. The thickness and depths of degraded layers also showed a parabolic relationship with time. A normal grain growth was observed in the Cr-rich surface oxide layer. When corrosion tests were conducted in a pure helium environment, the oxidation was suppressed drastically. It was elucidated that minor impurity gases in the helium would have detrimental effects on the high-temperature corrosion behavior of Alloy 617 for the VHTR application.

• The Korean Journal of Ceramics
• /
• 제6권4호
• /
• pp.401-404
• /
• 2000

Mimicking the bacterial synthesis of magnetosomes, in which the functionalized surface of a cytoplasmic (lipid) membrane is considered to be stimulating the crystal growth of magnetite, we have successfully grown magnetite films at $30^{\circ}C$ using an arachic acid monomolecular layer as a functionalized surface. The lipid monomolecular layer was spread on an aqueous solution of FeCl$_2$ which was oxidized by flowing a mixed gas, with ratio $O_2$/$N_2$=1/2000, on the surface of the lipid layer. Mossbauer and X-ray diffraction analyses revealed that the Fe$_3$O$_4$ films contain small amounts of ferric hydroxyl impurity phases of ${\alpha}$-FeOOH and ${\tau}$-FeOOH. This is because the oxygen partial pressure at the ferrite/aqueous interface changed as the film (through which the gas penetrated) increased in thickness. Methods to obtain single phase magnetite films are proposed.