• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.233-236
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• 2004

Total impurity analysis of a primary standard solution is one of the essential procedures to determine an accurate concentration of the standard solution by the gravimetry. Bi impurity is determined in Pb standard solutions by inductively coupled plasma mass spectrometry (ICP-MS). The direct nebulization of the Pb standard solution produces a significant amount of the Pb matrix-induced molecular ions which give rise to a serious spectral interference to the Bi determination. In order to avoid the spectral interference from the interferent $^{208}PbH^+$, the hydride generation method is employed for the matrix separation. The Bi hydride vapor is generated by reaction of the sample solution with 1% sodium borohydride solution. The vapor is then directed by argon carrier gas into the ICP after separation from the mixture solution in a liquid-gas separator made of a polytetrafluoroethylene membrane tube. The presence of 1000 ${\mu}$g/mL Pb matrix caused reduction of the bismuthine generation efficiency by about 40%. The standard addition method is used to overcome the chemical interference from the Pb matrix. Optimum conditions are investigated for the hydride-generation ICPMS. The detection limit of this method is 0.5 pg/mL for the sample solutions containing 1000 ${\mu}$g/mL Pb matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1148-1151
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• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.99-102
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• 2003

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.239-242
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• 2002

Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.99-104
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• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.161-164
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• 2001

In this paper, we investigated the dielectric and piezoelectric properties of Pb(Sb, Nb)O$_3$-Pb(Zr, Ti)O$_3$ ceramic(PSN) for piezoelectric transformer and actuator etc. Effect of MnO$_2$ addition on the PSN ceramic was investigated. Anisotropic properties of electromechanical coupling factor and piezoelectric properties proved to be varied with amount of MnO$_2$ impurity and sintering temperature. The electromechanical coupling factor k$_{p}$ of 0.38 and the mechanical quality factor Q$_{m}$ of 1944 were obtained from the specimen with 0.4 wt% MnO$_2$ sintered at 115$0^{\circ}C$ addition. Experimental results indicated that the PSN ceramic with MnO$_2$ impurity can be effectively used for piezoelectric transformer and actuator.tor.

• Journal of the Korean Applied Science and Technology
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• v.29 no.4
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• pp.594-598
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• 2012

Polymer electrolyte membrane fuel cell(PEMFC) performance degrades seriously when sulfur dioxide and hydrogen sulfide are contaminated in the fuel gas at anode and air source at cathode, respectively. This paper reveals the effect of the combined sulfur impurity poisoning on both PEMFC cathode and anode parts through measuring electrical performance on single FC operated under 1 ppm to 10 ppm impurity gases. The severity of $SO_2$ and $H_2S$ poisoning depended on concentrations of impurity gases under optimum operating conditions($65^{\circ}C$ of cell temperature and 100 % relative humidity). Sulfur adsorption occured on the surface of Pt catalyst layer on MEA. In addition, MEA poisoning by impurity gases were cumulative. After four consecutive poisonings with 1, 3, 5 to 10 ppm, the fuel cell performance of PEMFC was decrease upto 0.54 V(76 %) from 0.71 V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.611-615
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• 1999

Piezoelectric properties of PMN-PZT ceramics with $CeO_2$ impurity were investigated. Mechanical quality factor, $Q_m$ of 1792, 1285 and the electromechanical coupling coefficient, $k_p$ of 0.52, 0.54 were obtained from the specimen with 0.25 and 0.5 mole % $CeO_2$ respectively. Curie temperature was decreased with the addition of $CeO_2$ while the electric coercive field was proportional to the amount of impurity. Based on the system ceramics with 0.5 mole % cerium oxide, a Rosen type piezoelectric transformer was fabricated and tested. Voltage step-up ratios of 230 and 13 were obtained from the transformer at no load and $100 k\Omega$ resistance, respectively. Experimental results showed a potential of the transformer for the practical use coupled with the expected strength increase by the grain size refinement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.309-312
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• 2004

The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.532-537
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• 2003

Crystallographic, electric, magnetic and heat transition properties of $\alpha$-Fe$_2$O$_3$ have been studied with a small addition of Eu impurities. Hematite($\alpha$-Fe$_2$O$_3$) is a basic ferromagnetic material having rhombohedral structure, which is similar to perovskites structure. Eu is a rare earth element that has an electric configuration of 4f$^{7}$ 6s$^2$. X-ray diffraction pattern of Fe$_{1-x}$ Eu$_{x}$O$_3$ (x = 0.00, 0.04, 0.06) shows an increament of a value when the amount of Eu impurities increased. The VSM data show an increment of magnetization by increasing the amount of Eu impurity. The one with x=0.06 shows the largest increment of magnetic remanence. The magnetic remanence varied from 0.49$\times$10$^{-3}$ emu/g to 0.62$\times$10$^{-3}$ emu/g when Eu impurity is increased by 2 %. Coercivity is decreased as Eu impurity is increased. Resistances is reduced significantly by Eu impurity. There is a clear difference in temperature-dependent resistance depending on the amount of Eu impurities. Especially, there are cusps between 150 K to 175 K. It indicates the change of electronic quantum states inside the atoms by rare earth impurities in rhombohedral structure. Temperature-dependent heat capacity shows that the most effective amount of Eu impurities is 6 %. %.