• ETRI Journal
• /
• v.42 no.5
• /
• pp.781-789
• /
• 2020

In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of -14 dB to -5 dB, and output matching (S₂₂) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.9
• /
• pp.852-857
• /
• 2011

In this paper, the application of a variable characteristic impedance transmission line that can be used to design a dual-band bandpass filter(BPF) is presented. The proposed filter offers a fixed first frequency passband and a controllable second passband. The tuning of the second passband is achieved by varying the characteristic impedance of and open shunt stub line in a stub loaded resonator(SLR) with the help of a defected ground structure(DGS) transmission line and varactor diodes. In order to validate the proposed structure, a two stage dual-band BPF with three transmission zeros was implemeted and experimentally verified based on its theoretical predictions and simulations.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.19 no.1
• /
• pp.83-90
• /
• 1994

In this paper, the GYRATOR circuit is designed by the highly linear MOS transconductor with the gain factor controllable by offset voltage, and the floating inductor, the floating resistor and the grounded resistor are simulated by the GYTATOR for VLSI. And for the design exmple, Butterworth filter is designed using this GYRATOR, and is conpensated by the frequency transformation for the frequency shift that due to non-ideal output impedance of transconductor.