• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 컴퓨터소사이어티 추계학술대회논문집
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• pp.15-18
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• 2003

Flash memory becomes more important for its fast access speed, low-power, shock resistance and nonvolatile storage. But its native restrictions that have limited 1ifetime, inability of update in place, different size unit of read/write and erase operations need to managed by FTL(Flash Translation Layer). FTL has to control the wear-leveling, address mapping, bad block management of flash memory. In this paper, we focuses on the fast access to address mapping table and proposed the way of faster valid page search in the flash memory using the VPLT(Valid Page Lookup Table). This method is expected to decrease the frequency of access of flash memory that have an significant effect on performance of read and block-transfer operations. For the validations, we implemented the FTL based on Windows CE platform and obtained an improved result.