• Advances in nano research
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• v.1 no.4
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• pp.183-192
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• 2013

One-dimensional multiferroic nanostructured composites have drawn increasing interest as they show tremendous potential for multifunctional devices and applications. Herein, we report the synthesis, structural and dielectric characterization of barium titanate ($BaTiO_3$)-bismuth ferrite ($BiFeO_3$) composite fibers that were obtained using a novel sol-gel based electrospinning technique. The microstructure of the fibers was investigated using scanning electron microscopy and transmission electron microscopy. The fibers had an average diameter of 120 nm and were composed of nanoparticles. X-ray diffraction (XRD) study of the composite fibers demonstrated that the fibers are composed of perovskite cubic $BaTiO_3$-$BiFeO_3$ crystallites. The magnetic hysteresis loops of the resultant fibers demonstrated that the fibers were ferromagnetic with magnetic coercivity of 1500 Oe and saturation magnetization of 1.55 emu/g at room temperature (300 K). Additionally, the dielectric response of the composite fibers was characterized as a function of frequency. Their dielectric permittivity was found to be 140 and their dielectric loss was low in the frequency range from 1000 Hz to $10^7$ Hz.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.28-31
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• 2000

In this paper, the effects of La addition of PLZT(x/30/70) thin films Prepared by sol-gel method are investigated for NVFRAM application. The tetragonality (c/a), the grain size, and the surface roughness of PLZT thin films decrease with an increase of La concentration. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent decrease from 0.075 to 0.025. Also, the leakage current density at 100kV/cm decrease from 5.83$\times$10$^{-7}$ to 1.38$\times$10$^{-7}$ 4/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$170kV/cm, the remanent polarization and the coercive field of PLZT thin films with La concentration from 0 to 10㏖％ decrease from 20.8 to 10.5 $\mu$C/cm and from 54.48 to 32.12kV/cm, respectively. After a fatigue measurement by applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarizations of PLZT thin films with 0 and 10㏖％ La concentration decrease about 64 and 42 ％ from initial state. In the results of retention measurement after 10$^{5}$ s, PLZT thin films with 0 to 10mo1％ La concentration show that the remanent polarization is decreased about 43％ and 9％ from initial state, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.186-192
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• 2012

Half-rail stacked drivers are used to reduce power consumption of the drivers for synchronous buck converters. In this paper, the stacked driver is optimized by matching the average charging and discharging currents used by high-side and low-side drivers. By matching the two currents, the average intermediate bias voltage can remain constant without the aid of the voltage regulator as long as the voltage ripple stays within the window defined by the hysteresis of the regulator. Thus the optimized driver in this paper can minimize the power consumption in the regulator. The current matching requirement yields the value for the intermediate bias voltage, which deviates from the half-rail voltage. Furthermore the required capacitance is also reduced in this design due to decreased charging current, which results in significantly reduced die area. The detailed analysis and design of the stacked driver is verified through simulations done using 5V MOSFET parameters of a typical 0.35-${\mu}m$ CMOS process. The difference in power loss between the conventional half-rail driver and the proposed driver is less than 1%. But the conventional half-rail driver has excess charge stored in the capacitor, which will be dissipated in the regulator unless reused by an external circuit. Due to the reduction in the required capacitance, the estimated saving in chip area is approximately 18.5% compared to the half-rail driver.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.27-33
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• 2001

The performance of the ordinary Fiber Bragg Grating(FBG) sensor strain measurement system, which uses Fabry-Perot filter for scanning wavelength, has limitation for application because of hysteresis characteristics of PZT element in the filter, slow scan rate of the filter and the high cost of system. We proposed and experimented a multiple FBG sensor system using light emitting diode(LED) as a light source and adapting Code Division Multiplexing(CDM) method to separating out individual sensor signal. Output signals for a applied static and dynamic strain and crosstalk levels between sensor signals were measured. The price of the system is very loss and the response speed is very fast. Crosstalk levels between sensor signals below - 30 dB were demonstrated.

• Polymer(Korea)
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• v.31 no.1
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• pp.47-52
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• 2007

Polyurethane flexible foams have been widely used for automotive seat cushions because of their excellent performance. It has been required so far to reduce the density of seat cushion foam. However, recently, improving the riding comfort of seat cushions becomes more important. With regard to riding comfort, we investigated the improvement of static properties such as the ball rebound property and the hysteresis loss. We also studied the vibration characteristics, which are well known as an important factor to affect the comfort performance during driving.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.629-636
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• 1994

The ferrimagnetic glass-ceramics in the system Fe2O3-CaO-SiO2 for hyperthermia were investigated. Glasses could be prepared up to the content of 40 wt% of Fe2O3 and below the weight ratio of 1.0 of CaO/SiO2. The maximum saturation magnetization and the maximum coercive force were 29.85 emu/g and 340.1 Oe respectively, for a glass 40Fe2O3.20CaO.40SiO2 composition heat-treated at 95$0^{\circ}C$ for 8 hours. And for a glass 40Fe2O3.30CaO.30SiO2 composition the maximum saturation magnetization and the maximum coercive force were 18.47 emu/g and 374.4 Oe heat-treated at 1,00$0^{\circ}C$ and 90$0^{\circ}C$ for 8 hours respectively. The maximum hysteresis loss was 1,726.3 cal/g for a glass 40Fe2O3.20CaO.40SiO2 composition heat-treated at 95$0^{\circ}C$ for 8 hours. It was found that the ferrimagnetic Fe2O3.CaO.SiO2 glass-ceramics was little injurious to human body as results of biocompatibility test and biotoxicity test.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.87-95
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• 1996

We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.11
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• pp.1863-1872
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• 2001

In this Paper, we suggest the precision stage using a novel non-contact planar actuator that utilizes an interaction between an array type of air-core solenoids and permanent magnets. The former with axes arranged in the mutually orthogonal direction is fixed on the stator and the latter with the same polar direction is attached below the stage. The promising magnetic structure has little uncertainty such as hysteresis loss caused by ferromagnetic material, then it is simple to quantify the magnetic phenomenon. And all the magnetic forces are transmitted through narrow air-gap between the coil and the permanent magnet, therefore the structure can be highly compacted. Furthermore, the stage or plate can be perfectly isolated from the stator without any wire connection, leading to diminish the generating possibility of wear particles due to mechanical contact. Then. it is estimated that the proposed operating principle is very suitable for work requiring high accuracy and cleanness. or general-purpose nano stage. The main issues rebated to the plate driving are discussed here.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.