• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.37-40
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• 2000

This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al：Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.664-668
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• 2011

In this study, we have fabricated the red OLED (organic light emitting diode). The basic device structure is ITO/hole transporting layer, TPD(500 $\AA$)/red emitting layer, Alq3 doped with DCM2:rubrene(20 $\AA$)/electron transporting layer, Alq3(M) (500 $\AA$-M $\AA$)/LiF(15 $\AA$)/Al(1,000 $\AA$). The thickness of electron transporting layer(500 $\AA$-M $\AA$) changed 0, 20, 40, 60 $\AA$. Turn on voltage of the red OLED was 5 V, 6 V, 6.5 V and 7.5 V, respectively with electron transfer layer changed ratio. Luminance of red OLED was 4,504, 1,840, 1,490 and 1,130 cd/$m^2$, respectively. Optimized electron transfer layer position changed ratio of the red OLED was 0 $\AA$.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1190-1195
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• 2004

In this study, numerical investigation has been performed on the evolution of key-hole geometry during high-energy density laser welding process. Unsteady phase-change heat transfer and fluid flow with the surface tension and recoil pressure are simulated. To model the overheated surface temperature and recoil pressure considering subsonic/sonic vapor flow, the one-dimensional vaporization models proposed by Ganesh and Knight are coupled over liquid-vapor interface. It is shown that the present model predicts well both the vaporization physics and the fluid flow in the thin liquid layer over the other model.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1650-1653
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• 2007

We demonstrate fluorescent green organic lightemitting diodes employing a rhenium oxide ($ReO_3$)-doped N,N-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of $ReO_3$ doping effects are described in terms of charge transfer complex and stabilization of HTL morphology.

• Journal of the Korean Society of Visualization
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• v.2 no.2
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• pp.38-44
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• 2004

Theoretical and numerical studies are given to the sink flows within a rotating circular tank driven by the fluid withdrawal from a bottom circular hole. It was found that, when the upper free surface was set with no-slip boundary conditions, the Ekman boundary-layer develops not only above the bottom surface but under the top surface. The sink fluid is coming from the two Ekman layers, and the mass transfer from the bulk, inviscid region is dependent on the rotational speed. It is also remarkable to see that all the fluid gathered along the axis flows in a form of rapidly rotating fluid column haying almost the same diameter as the bottom hole.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1571-1572
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• 2009

Polymer solar cells were fabricated with gravure printing process and the effect of thermal annealing of gravure printed organic layer was investigated. The layer structure of polymer solar cells is glass / ITO / hole transfer layer / active layer / Al structure was fabricated. For the active layer, 1:1 ratio of poly-3-hexylthiophene (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) mixture was applied. The P3HT/PCBM blend was gravure printed onto the substrates. The effect of thermal annealing was investigated by changing annealing time and the number of printing. Maximum 3.6% of power conversion efficiency was achieved with gravure printing of organic layer and thermal annealing in this work.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.458-458
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• 2011

Graphene, a single atomic layer of sp2-bonded carbon, shows substantial potential for various applications. Chemical manipulation of its electronic properties will be of great importance. In this study, we have investigated interaction between graphene and organic molecular layer of tetrafluorotetracyanoquinodimethane (F4-TCNQ), a strong electron acceptor. F4-TCNQ films of varying thickness were evaporated onto graphene mechanically exfoliated on SiO2/Si substrates. F4-TCNQ molecules increase the frequencies of Raman G and 2D bands of graphene while decreasing the linewidth of G band and 2D/G intensity ratio, which is consistent with increase of hole density in graphene. These results exemplify the possibility of chemical tuning of electronic properties of graphene.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.435-438
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• 2007

$V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.166-169
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• 2000

The Organic Electroluminescence (OEL) device, that was consisted of ALq3(8-hydroxyquinoline aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine), has been used. We investigated characteristics of brightness and current density about OEL that was oxidated each layers. We used two samples that were fabricated each continuous and non-continuous method. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1530cd/$\textrm{cm}^2$ at a current density of 100mA/$\textrm{cm}^2$. A luminance of over 2600cd/$\textrm{cm}^2$ was also observed after the final fabrication process.