• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.664-670
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• 2015

A four-times-VDD switch that supports high and low voltage mode operations is demonstrated in a generic 65 nm logic process. The proposed switch shows the robust operation for supply voltages ranging from VDD to $4{\times}VDD$. A cascaded voltage switch and a voltage doubler based charge pump generate the intermediate supply voltage levels required for the proposed high voltage switch. All the high voltage circuits developed in this work can be implemented using standard logic transistors without being subject to any voltage overstress.

• Journal of Power Electronics
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• 제18권1호
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• pp.11-22
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• 2018

This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.707-710
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• 2002

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

• 전력전자학회논문지
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• 제23권3호
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• pp.153-160
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• 2018

Recent trends in high-power-density applications have highlighted the importance of designing power converters with high-frequency operation. However, conventional LLC resonant converters present limitations in terms of high-frequency driving due to switching losses during the turn-off period. Switching losses are caused by the overlap of the voltage and current during this period, and can be decreased by reducing the switch voltage. In turn, the switch voltage can be reduced through a series connection of four switches, and additional circuitry is essential for balancing the voltage of each switch. In this work, a three-level LLC resonant converter that can operate at high frequency is proposed by reducing switch losses and balancing the voltages of all switches with only one capacitor. The voltage-balancing principle of the proposed circuit can be extended to n-level converters, which further reduces the switch voltage stress. As a result, the proposed circuit is applicable to high-input applications. To confirm the validity of the proposed circuit, theoretical analysis and experimental verification results from a 350 W-rated prototype are presented.

• Journal of Power Electronics
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• 제16권2호
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• Journal of Power Electronics
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• 제2권2호
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• pp.104-111
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• 2002

This paper presents a new hybrid control scheme using Active-Clamped Class-E(ACCE) inverter for the Induction Heating (IH) jar. The proposed hybrid control scheme has characteristics, which acts as class-E inverter at lower switch voltage and ACCE inverter at higher switch voltage than reference voltage of the main switch by feeding back voltage of the switch. The proposedv hybrid control scheme also has advantage of conventional ACCE inverter such as Zero-Voltage-Switch(ZVS) of the main switch and the reduced switch voltage due to clamping cricuit. Moreover, the proposed hybrid control method using ACCE inverter has higher output power than convenional control scheme since ACCE inverter operates like class-E inverter at low input voltage condition. The principles of the proposed control are explained in detail and the validity of the proposed control scheme is verifed through the several interesting simulated and experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.177-182
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• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• 전기전자학회논문지
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• 제23권3호
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• pp.962-970
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• 2019

본 논문에서는 자기구동 동기스위치를 이용한 비절연 고효율 고전압출력 DC-DC 컨버터를 제안한다. 제안하는 컨버터는 전통적인 승압형 DC-DC 컨버터 구조에 탭형 인덕터를 적용함으로써 고전압출력을 달성하며 주스위치부에 무손실 커패시터-다이오드(LCD, lossless capacitor-diode) 스너버를 적용하여 스위치 전압스트레스를 저감한다. 그리고 출력부에 다이오드 대신에 동기스위치를 적용함으로써 역회복 문제를 해결하고 고효율을 달성한다. 제안한 컨버터의 동기스위치는 자기구동방식을 이용하고 단순한 구조를 가진다. 본 논문에서는 제안한 컨버터의 동작원리를 먼저 설명하고, 후에 컨버터 프로토타입의 설계예를 제시한다. 그리고 설계된 회로파라미터로 제작된 프로토타입의 실험결과로써 제안한 컨버터의 특성을 보인다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.36-37
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• 2013

This paper presents high voltage operation sensing boost converter with high side current. Proposed topology has three functions which are high voltage driving, high side current sensing and low voltage boost controller. High voltage gate driving block provides LED dimming function and switch function such as a load switch of LED driver. To protect abnormal fault and burn out of LED bar, it is applied high side current sensing method with high voltage driver. This proposed configuration of boost converter shows the effectiveness capability to LED driver through measurement results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2189-2191
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• 1999

To improve the reliability of the klystron-modulator systems, the stable operations of the thyratron an important factor of the system are required. The thyratron always has a possibility of self-fire according to the conditions of the applied high voltage and this induces the system fault. Therefore a command charging method was introduced to reduce the applied tim8 of the high voltage into the thyratron. The high voltage switch used in the command charging method is the SCR (1.6 kV, 50A) and consists of 10 SCRs in series to discharge 10 kV. A pulse transformer was used to apply the trigger pulse. The objectives of this research are the fabrication of the semiconductor switch and the study of the experimental result of the operation characteristics of the high voltage semiconductor switch.