• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1999.05a
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• pp.185-191
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• 1999

An air-conditioning system based on the chemical heat storage principle was considered. $H_2O$ was chosen as the reaction gas and the working fluid as well. Na$_2$S, CaCl$_2$, MnCl$_2$, BaCl$_2$, MgCl$_2$, Fe$_2$(SO$_4$)$_3$ and MnSO$_4$ were tested as the solid reactants by using Cahn pressure balance. Na$_2$S was superior to other salts in respect of high capability of absorption of water gas, 5 moles of $H_2O$ per unit mole of Na$_2$S, and adequate temperature of adsorption, $65^{\circ}C$ at 7torr, and of desorption, 13$0^{\circ}C$ at 76torr. Clausius-Clapeyron diagram of Na$_2$S was obtained via adsorption experiments at several vapor pressures of water gas. To enhance heat and mass transfer characteristics, usually below 1W/m K, of the reactor bed of general adsorption systems, expanded graphite block was adapted as the support of Na$_2$S salt. Expanded graphite blocks had thermal conductivity values of 20~80W/mK with respect to 100~400kg/㎥ of block bulk density. Permeability values of expanded graphite blocks were 10$^{-13}$ ~ 10$^{-14}$ $m^2$ with respect to 100~300kg/㎥ of block bulk density showing highly decreasing values of permeability, below 10$^{-l4}$$m^2$, in the range of above 150kg/㎥ of block bulk density.y.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.666-671
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• 2012

Gas hydrates are inclusion compounds formed when small-sized guest molecules are incorporated into the well defined cages made up of hydrogen bonded water molecules. Since large masses of natural gas hydrates exist in permafrost regions or beneath deep oceans, these naturally occurring gas hydrates in the earth containing mostly $CH_4$ are regarded as future energy resources. The heat of dissociation is one of the most important thermal properties in exploiting natural gas hydrates. The accurate and direct method to measure the dissociation enthalpies of gas hydrates is to use a calorimeter. In this study, the high pressure micro DSC (Differential Scanning Calorimeter) was used to measure the dissociation enthalpies of methane, ethane, and propane hydrates. The accuracy and repeatability of the data obtained from the DSC was confirmed by measuring the dissociation enthalpy of ice. The dissociation enthalpies of methane, ethane, and propane hydrates were found to be 54.2, 73.8, and 127.7 kJ/mol-gas, respectively. For each gas hydrate, at given pressures the dissociation temperatures which were obtained in the process of enthalpy measurement were compared with three-phase (hydrate (H) - liquid water (Lw) - vapor (V)) equilibrium data in the literature and found to be in good agreement with literature values.