• Journal of Powder Materials
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• v.15 no.1
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• pp.6-12
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• 2008

[ $YBa_2Cu_3O_{7-y}$ ](123) powders were synthesized by the solid state reaction method using two different purity $BaCO_3$ powders (99.75% and 99.7% purity) and $Y_2O_3$ (99.9%) and CuO (99.9%) powders. The effect of $BaCO_3$ purity on the formation of a 123 phase and the superconducting properties were investigated. The mixtures of raw powders were calcined at temperature ranges of $800^{\circ}C-880^{\circ}C$ in air and finally made into a single grain samples by a melt processing with top seeding. It was found that a 123 phase was well formed at temperature above $870^{\circ}C$, but the purity effect on the 123 formation was negligible. The single-grain 123 samples prepared from the different $BaCO_3$ powders showed the same $T_c$ value of 90.5 K and similar $J_c$ values about $10^4\;A/cm^2$ at 0 T and 77 K, and $10^3\;A/cm^2$ at 2 T and 77 K. This result indicates that the low purity, cheap price $BaCO_3$ powder can be used as a raw material for the fabrication of single-grain, high-$J_c$ superconducting levitator.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.343-347
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• 1999

We fabricated a resistive SFCL having a shunt resistor parallel to it in order to bifurcate the transient current at faults. The SFCL consists of a YBCO film coated with an Au layer (10 ${\omega}$ at room temperature), which is to disperse the heat generated at hot spots in the YBCO film, and the 5 ${\omega}$ shunt resistor. The minimum quench current of the SFCL was found to be 12.2 A$_{peak}$. This SFCL successfully controlled the fault current below 23 A$_{peak}$ which is otherwise to increase up to 113 A$_{peak}$. Bifurcation of the current resulted in the temperature rise of the YBCO/Au film 3 times slower than without the shunt, protecting the SFCL at high currents.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.152-159
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• 1999

YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.