• Title/Summary/Keyword: high power application

Search Result 2,219, Processing Time 0.032 seconds

A Study of Development and Application with High Power Electron Beam (대전력 전자 빔의 개발 및 응용에 관한 연구)

  • Kim, Won-Sop;Kim, Jong-Man;Kim, Kyung-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05b
    • /
    • pp.169-173
    • /
    • 2003
  • In this paper, we present a design and experiment study of high power large diameter backward wave oscillator. Analysis is made within the scope of linear theory of absolute instibility. The Electron beam generator may be atteractive source of high power millimeter microwaves which has simpler structure.

  • PDF

A Study on the Application of 22kV class Superconducting Cable in Utility Network (전력회사 계통에 22kV급 초전도 케이블 도입을 위한 적용 개소 고찰)

  • 김종율;윤재영;이승렬
    • Progress in Superconductivity and Cryogenics
    • /
    • v.5 no.2
    • /
    • pp.20-29
    • /
    • 2003
  • As power systems grow more complex and power demands increase, the need of underground transmission system is increasing gradually. But it is very difficult and high in cost to construct new ducts and/or tunnels for power cables in metropolitan areas. HTS (High Temperature Superconducting) cable can carry very high current densities with strongly reduced conductor loss and allow high power transmission at reduced voltage. Therefore HTS cable can transfer more power to be moved in existing ducts, which means very large economical and environmental benefits. A development project for a 22kV class HTS cable is ongoing at a research centers, and the cable manufacturer in Korea. In this paper, we carried out investigation for application of 22kV class HTS cable in Korean utility networks. The results show that the HTS cable is applicable to replace IPB in pumping-up power plant, withdrawal line in distributed generation, withdrawal line in complex power plant, and conventional under ground cable. Finally, as the cost of HTS wire and refrigeration drops, the technical and economical potential of HTS cable is evaluated positively.

A study on 154kV protective relaying systems for HTS power devices application in Korea

  • Lee, Seung-Ryul;Yoon, Jae-Young;Lee, Byong-Jun
    • Progress in Superconductivity and Cryogenics
    • /
    • v.9 no.4
    • /
    • pp.28-31
    • /
    • 2007
  • This paper describes the consideration of 154kV protective relaying systems for applying HTS(High Temperature Superconducting) power devices to Korean power system. We investigates firstly 154kV relay systems of Korean power system and then do a basic study on the relay systems in the power system with superconducting devices. For the more detailed result, the study using EMTDC relay system modeling will be done from the viewpoint of superconducting devices application in the future.

Coreless Printed Circuit Board (PCB) Transformers - Fundamental Characteristics and Application Potential

  • Hui S. Y.;Tang S. C.;Chung H.
    • Proceedings of the KIPE Conference
    • /
    • 2001.10a
    • /
    • pp.1-6
    • /
    • 2001
  • In this article, the fundamental concept, characteristics and application potentials of coreless printed-circuit-board (PCB) transformers are described. Coreless PCB transformers do not have the limitations associated with magnetic cores, such as the frequency limitation, magnetic saturation and core losses. In addition, they eliminate the manual winding process and its associated problems, including labor cost, reliability problems and difficulties in ensuring transformer quality in the manufacturing process. The parameters of the printed windings can be precisely controlled in modern PCB technology. Because of the drastic reduction in the vertical dimension, coreless PCB transformers can achieve high power density and are suitable for applications in which stringent height requirements for the circuits have to be met. A transformer's power density of $24W/cm^2$ has been reported in a power conversion application. When used in an isolation amplifier application, coreless PCB transformers tested so far enable the amplifier to achieve a remarkable linear frequency range of 1MHz, which is almost eight times higher than the frequency range of 120kHz in existing Integrated-Circuit products. PCB materials offer extremely high isolation voltage, typically from 15kV to 40kV, which is higher than many other isolation means such as optocouplers. It is envisaged that coreless PCB transformers can replace traditional core-based transformers in some industrial applications. Their application potentials deserve more attention and exploration.

  • PDF

HIGH POWER, HIGH BRIGHTNESS PROTON ACCELERATORS

  • Lee, Yong-Yung
    • Nuclear Engineering and Technology
    • /
    • v.37 no.5
    • /
    • pp.433-446
    • /
    • 2005
  • The development of accelerator science and technology has been accommodating ever increasing demand from scientific community of the beam energy and intensity of proton beams. The use of high-powered proton beams has extended from the traditional application of nuclear and high-energy physics to other applications, including spallation neutron source replacing nuclear reactor, nuclear actinide transmutation, energy amplification reactors. This article attempts to review development of proton accelerator, both linear and circular, and issues related to the proton beam energy, intensity as well as its output power. For related accelerator physics and technical review, one should refer to the recent article in the Reviews of Modem Physics [1]

Optimal Design of Trench Power MOSFET for Mobile Application

  • Kang, Ey Goo
    • Transactions on Electrical and Electronic Materials
    • /
    • v.18 no.4
    • /
    • pp.195-198
    • /
    • 2017
  • This research analyzed the electrical characteristics of an 80 V optimal trench power MOSFET (metal oxide field effect transistor) for mobile applications. The power MOSFET is a fast switching device in fields with low voltage(<100 V) such as mobile application. Moreover, the power MOSFET is a major carrier device that is not minor carrier accumulation when the device is turned off. We performed process and device simulation using TCAD tools such as MEDICI and TSUPREM. The electrical characteristics of the proposed trench gate power MOSFET such as breakdown voltage and on resistance were compared with those of the conventional power MOSFET. Consequently, we obtained breakdown voltage of 100 V and low on resistance of $130m{\Omega}$. The proposed power MOSFET will be used as a switch in batteries of mobile phones and note books.

Point of Soft Switching Technology on Practical Application

  • Koga, Takashi
    • Proceedings of the KIEE Conference
    • /
    • 2001.10a
    • /
    • pp.262-268
    • /
    • 2001
  • Remarkable progress has been performed in power electronics, using high frequency switching based on the improvement of power semi-conductor devices. In the other hands, it gives us serious problems, such as, insulation, increasing of the high frequency leakage current, and electric corrosion of bearing in the loaded motors driven by inverters using high frequency switching. To improve these problems, many researches have made especially on the application of soft switching technologies. From this point of view IEE-Japan had started the research groups on soft-switching technology 1997 and 1999. This paper is a survey based on the discussion in this research group with results of ARCP inverter applied for 210kVA power supply.

  • PDF

CoolSiCTM SiC MOSFET Technology, Device and Application

  • Ma, Kwokwai
    • Proceedings of the KIPE Conference
    • /
    • 2017.07a
    • /
    • pp.577-595
    • /
    • 2017
  • ${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

  • PDF

Study on the Multislotted Waveguide for the High Power Microwave (대용량 마이크로웨이브 다중 슬롯 도파관의 연구)

  • 백주원;유동욱
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.52 no.1
    • /
    • pp.47-54
    • /
    • 2003
  • The radiating multislotted antennas widely used in the antennas technique are rather prospective for the application in industrial installations for microwave heating. In this paper, the model of such an antenna is experimentally investigated. The model under investigation presents a section of the waveguide Inn 340 whose broad wall contains 15 movable slotted plates. This design allows to experimentally define a location of all the slots providing the necessary distribution of radiating power along the waveguide with minimal SWR of all the system. The variants of power uniform distribution along the waveguide as well as the power decreasing to the waveguide end are examined. The application of plates with different thickness allowed to estimate the influence of the walls thickness on the Power distribution. The possibility of system extra-tuning with the help of tuning screws located in the vicinity of each slot is considered. Obtained results are compared to the conducted theoretical calculations and data in references.

Preliminary Study of HTS-FCL Application in Distribution System (초전도 한류기의 배전계통 적용 기본검토)

  • Choi, Heung-Kwan;Yoon, Jae-Young;Kim, Jong-Yeul;Lee, Byong-Jun
    • Proceedings of the KIEE Conference
    • /
    • 2003.07a
    • /
    • pp.421-423
    • /
    • 2003
  • To prevent fault effect in supply of electric power distribution system and plan stable operation of electric power system, must control magnitude of fault current. Although there are various kinds of method to solvethis, approached from super conductivity Fault Current Limiter application viewpoint among them. High Temperature Superconductor-Fault Current Limiter (HTS-FCL) development is progressing according to HTS technology development, and system application is tried. For actual system application of such super conductivity FCL, so that can reflect special quality of actuality supply of electric power distribution system just as it is in this treatise supply of electric power system by two modelling do. Also, by simulation of HTS-FCL action and protection coordination with another equipment appliances, verified the effectiveness in supply of electric power system applying itself super conductivity FCL EMTDC dynamic characteristic model that is develope.

  • PDF