• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.397-402
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• 1996

A compact excimer laser was developed with coaxial type which the one line cross flow fan is only used. At 1 kHz repetitive operation, average power of KrF laser is 56 watt. In this paper, Design parameter and CR characteristic are investigated for attainment of the compact 1 kHz excimer laser. We have obtained overall efficiency of 1.2% with KrF laser gas. At this time, CR and the variation of laser output are 2.97, $\pm$9%. Laser gas volume and active volume are 10 liter, 1.8(H)$\times$1.2(W)$\times$30(L)=64.8 ㎤, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.39-43
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• 2003

The technology required to advance the state of the art of ultra-high-intensity excimer amplifier construction to the 100 J/100fs output pulse level is identified. The preliminary design work for very large final amplifier pumped by electron beam module is described, and key design problems and approaches are presented and discussed in detail based on the recent experimental and theoretical results.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.232-237
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• 1996

A 500 Hz repetition rate excimer laser was developed as light source for pollution lidar. In this paper, the high repetitive output characteristics, the gas flow loop structure, and CR(clearing ratio) characteristics were investigated. Our laser system was constructed compact structure with a streamline gas flow loop and UV preionization. The real gas volume of laser is 10 liter. At 500 Hz repetitive operation, we have obtained average power of 53 watt with KrF laser gas. The variation of laser output, CR, and active volume are $\pm$6.7%, 2.3, and 2.0(H)$\times$1.2(W)$\times$56(L)=134 ㎤, respectively. Laser output power is declined to half at 3$\times$$10^6$ shots.

• Journal of information and communication convergence engineering
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• v.1 no.4
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• pp.228-232
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• 2003

The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.349-352
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• 2001

In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.

• Journal of ILASS-Korea
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• v.2 no.4
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• pp.7-14
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• 1997

Laser Raman scattering method has been applied to measure equivalence ratio of methane/air mixture in injected spray. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity signal. Raman shifts and Raman scattering cross -sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ are measured precisely. Our results show an excellent agreement with those of other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air shows that $O_2:N_2=0.206:0.794$. We used gas injector which was operated at 1 bar. Methane is used as a fuel. Spray region is $10mm\times37mm$ and this region is divided into 80 points. In Raman signals are obtained and ensemble averaged for each point. 3-d and contour plot of distribution of equuivalence ratio is presented. Our measured results show that the equivalence ratio of methane/air mixture in methane-rich region is reasonable. However, more study is necessary for methane-lean region because background noise level is almost same as Raman intensity of methane.

• Journal of ILASS-Korea
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• v.5 no.4
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• pp.57-65
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• 2000

For this research an extension of the LIF technique that the LIEF(Laser Induced Exciplex Fluorescence) technique has been used LIEF technique is the unique method to allows the visualization of fuel vapor phase and liquid phase individually by capturing each signals of them. In this work performed that the basic procedure for advanced LIEF technique using TEA and benzene as dopants md high power KrF excimer laser to excite the dopants. Iso-octane is used as the fuel because it does not absorb light at the laser wavelength. The boiling point of benzene and TEA are $81^{\circ}C\;and89^{\circ}C$, respectively, in comparison to $99^{\circ}C$ for iso-octane. It is observed that the behavior and distribution of high pressed fuel injection from various test condition. The injection pressure is set as 3MPa. and 5MPa. And the ambient pressure of test chamber is atmospheric pressure and 1MPa, the ambient temperature of chamber is room temperature, $300^{\circ}C\;and\;500^{\circ}C$ to imitate the condition of GDI engine cylinder.

• Journal of ILASS-Korea
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• v.3 no.4
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• pp.35-42
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• 1998

Laser Raman scattering method has been applied to measure equivalence ratio of methane/air and propane/air mixture in constant volume combustion chamber. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity Raman signal. Raman shifts and Ram cross-sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ were measured precisely. Our results showed an excellent agreement with other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air showed that $O_2\;:\;N_2$ = 0.206 : 0.794. We used constant volume combustion chamber and gas injector which is operated at $5\sim10barg$. Methane and propane are used as a fuel. 50 Raman signal are obtained and ensemble averaged for measurement of equivalence ratio. Our measured results showed that the equivalence ratio of fuel/air mixture is reasonable at ${\pm}5%$ error range.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.