• 제목/요약/키워드: high power KrF laser

검색결과 11건 처리시간 0.026초

1 kHz 고반복 엑시머레이저의 출력 특성 (Output characteristics of 1kHz high repetition rate excimer laser)

  • 박홍진;이주희
    • 한국광학회지
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    • 제7권4호
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    • pp.397-402
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    • 1996
  • 레이저 가스를 하나의 횡류팬만으로 순환시키는 동심 원통형 구조의 소형 엑시머레이저를 개발하였다. 이 방치를 1kHz의 고속으로 반복동작시켰을 때 KrF 레이저의 평균출력은 56watt였다. 본 논문에서는 kHz급의 소형 엑시머레이저를 실현할 수 있는 설계 파라메터와 레이저 가스의 CR(Clearing Ratio)특성을 분석하였다. 평균출력 56watt일 때 레이저 효율은 1.2%, CR은 2.97, 출력변동율 .+-.9%이다. 이때 레이저 가스용적은 10 liter이고 방전체적은 1.8(높이)*1.2(폭)*30(길이)=64.8$cm^{3}$이다.

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엑시머 레이져를 이용한 극히 얕은 접합과 소스, 드레인의 형성과 50nm 이하의 극미세 n-MOSFET의 제작 (Ultra Shallow Junction wish Source/Drain Fabricated by Excimer Laser Annealing and realized sub-50nm n-MOSFET)

  • 정은식;배지철;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.562-565
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    • 2001
  • In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

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Novel Design of Ultrashort Pulse Excimer Laser Amplifier System I (Energy Characteristics)

  • Lee, Young-Woo
    • Journal of information and communication convergence engineering
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    • 제1권1호
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    • pp.39-43
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    • 2003
  • The technology required to advance the state of the art of ultra-high-intensity excimer amplifier construction to the 100 J/100fs output pulse level is identified. The preliminary design work for very large final amplifier pumped by electron beam module is described, and key design problems and approaches are presented and discussed in detail based on the recent experimental and theoretical results.

500 Hz급 엑시머레이저의 반복동작특성 (Repetitive operation characteristics of 500 Hz class excimer laser)

  • 박홍진;이주희
    • 한국광학회지
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    • 제7권3호
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    • pp.232-237
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    • 1996
  • 대기오염 원격측정용 LIDAR의 레이저광으로 사용하기 위해 반복율 500Hz급 엑시머 에리저를 개발하고 이의 고반복 에이저 출력특성, 레이저 가스의 유로구조와 CR특성을 조사하였다. 레이저 장치는 유선형의 가스유로, 주전극 직렬 UV 예비전리방식 등의 방법을 사용하고 컴팩트한 구조로 제작하여 가스 실용적을 10 liter 이하로 소형화하였다. KrF 레이저를 500Hz로 동작할 때의 최대출력은 53watt, 출력변동율은 .+-.6.7%, CR은 2.3, 방전체적은 2.0(H)*1.2(W)*56(L)=134$cm^{3}$ 이다. 이때 초기 출력에너지의 50%까지 출력이 감소할 때의 레이저가스의 수명은 3*$10^{6}$ shots이다.

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Novel Design of Ultrashort Pulse Excimer Laser Amplifier System II (Temporal Gain Control and Phase Distortion/ASE Characteristics)

  • Lee, Young-Woo
    • Journal of information and communication convergence engineering
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    • 제1권4호
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    • pp.228-232
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    • 2003
  • The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

레이져 어닐링을 이용한 낮은 면저항의 극히 얕은 접합 형성 (Ultra shallow function Formation of Low Sheet Resistance Using by Laser Annealing)

  • 정은식;배지철;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2001년도 춘계종합학술대회
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    • pp.349-352
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    • 2001
  • 본 논문은 기가 SRAM급 이상의 초고집적을- 위한 0.1$\mu\textrm{m}$의 설계치수를 갖는 MOSFET의 게이트 영역에서 활성 부분의 면저항을 감소시키기 위해 n영역으로 비소를 이온 주입하였다. 어닐링은 급속 열처리 공정 방법과 엑시머 레이져 어닐링 방법을 이용하였으며, 극히 얕은 접합의 형성이 가능하였다. 얕은 접합 형성 깊이는 10~20nm이며, 비소의 주입량은 2$\times$$10^{14}$ $\textrm{cm}^2$이고, 레이져는 엑시머이며 소스는 KrF로 파장은 248mm로 어닐링 하였다. 극히 얕은 P/N$^{+}$ 접합 깊이가 15nm이며, 이때 1k$\Omega$/$\square$의 낮은 면저항 특성을 갖는 결과가 나타났다.

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Laser Raman Scattering을 이용한 가스 분무내 당량비 계측에 관한 연구 (Equivalence Ratio Measurements in Gas Spray Using Laser Raman Scattering)

  • 진성호;박경석;송재익;김경수
    • 한국분무공학회지
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    • 제2권4호
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    • pp.7-14
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    • 1997
  • Laser Raman scattering method has been applied to measure equivalence ratio of methane/air mixture in injected spray. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity signal. Raman shifts and Raman scattering cross -sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ are measured precisely. Our results show an excellent agreement with those of other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air shows that $O_2:N_2=0.206:0.794$. We used gas injector which was operated at 1 bar. Methane is used as a fuel. Spray region is $10mm\times37mm$ and this region is divided into 80 points. In Raman signals are obtained and ensemble averaged for each point. 3-d and contour plot of distribution of equuivalence ratio is presented. Our measured results show that the equivalence ratio of methane/air mixture in methane-rich region is reasonable. However, more study is necessary for methane-lean region because background noise level is almost same as Raman intensity of methane.

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직접 분사식 연료 분무에서의 기.액상 분리 계측에 관한 연구 (An Experimental Study on the Analysis of Liquid/Vapor Phase in GDI Spray)

  • 장석형;김정호;박경석;진성호;김경수
    • 한국분무공학회지
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    • 제5권4호
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    • pp.57-65
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    • 2000
  • For this research an extension of the LIF technique that the LIEF(Laser Induced Exciplex Fluorescence) technique has been used LIEF technique is the unique method to allows the visualization of fuel vapor phase and liquid phase individually by capturing each signals of them. In this work performed that the basic procedure for advanced LIEF technique using TEA and benzene as dopants md high power KrF excimer laser to excite the dopants. Iso-octane is used as the fuel because it does not absorb light at the laser wavelength. The boiling point of benzene and TEA are $81^{\circ}C\;and89^{\circ}C$, respectively, in comparison to $99^{\circ}C$ for iso-octane. It is observed that the behavior and distribution of high pressed fuel injection from various test condition. The injection pressure is set as 3MPa. and 5MPa. And the ambient pressure of test chamber is atmospheric pressure and 1MPa, the ambient temperature of chamber is room temperature, $300^{\circ}C\;and\;500^{\circ}C$ to imitate the condition of GDI engine cylinder.

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UV Laser Raman Scattering을 이용한 정적 연소기내 분사된 연료의 정량적 당량비 측정에 관한 연구 (A Study on Quantitative Measurements of Equivalence Ratio in Constant Volume Chamber Using UV Laser Raman Scattering)

  • 진성호;허형석;김경수;박경석
    • 한국분무공학회지
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    • 제3권4호
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    • pp.35-42
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    • 1998
  • Laser Raman scattering method has been applied to measure equivalence ratio of methane/air and propane/air mixture in constant volume combustion chamber. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity Raman signal. Raman shifts and Ram cross-sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ were measured precisely. Our results showed an excellent agreement with other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air showed that $O_2\;:\;N_2$ = 0.206 : 0.794. We used constant volume combustion chamber and gas injector which is operated at $5\sim10barg$. Methane and propane are used as a fuel. 50 Raman signal are obtained and ensemble averaged for measurement of equivalence ratio. Our measured results showed that the equivalence ratio of fuel/air mixture is reasonable at ${\pm}5%$ error range.

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Planar Type Flexible Piezoelectric Thin Film Energy Harvester Using Laser Lift-off

  • Noh, Myoung-Sub;Kang, Min-Gyu;Yoon, Seok Jin;Kang, Chong-Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.489.2-489.2
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    • 2014
  • The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

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