• Polymer(Korea)
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• v.37 no.1
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• pp.1-4
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• 2013

We proposed a new process to fabricate a high-aspect-ratio microhair having surface wrinkles using the contact-and-tension of a microstamp. Through this work, we observed that regular surface wrinkles were generated on the hair with a diameter of around $20{\mu}m$ due to the uni-directional compressive stress during the photocuring process by ultraviolet light. To do this, we conducted an experimental system setup for contact-and-tension process. From the preliminary test results, we believed that the proposed method can be applied to make a long polymer hair having surface wrinkles for special applications to biomimetics, and some research fields related on surface area such as heat transfer and catalyst enhancement.

• New & Renewable Energy
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• v.1 no.1 s.1
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• pp.37-43
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• 2005

High-efficiency silicon solar cells have potential applications on mobile electronics and electrical vehicles. The fabrication processes of the high efficiency cells necessitate com placated fabrication precesses and expensive materials. Ti/Pd/Ag metal contact has been used only for limited area In spite of good stability and low contact resistance because of Its expensive material cost and precesses. Screen printed contact formed by Ag paste causes a low fill factor and a high shading loss of commercial solar cells because of high contact resistance and a low aspect ratio. Low cost Ni/Cu metal contact has been formed by using a low cost electroless and electroplating. Nickel silicide formation at the interface enhances stability and reduces the contact resistance resulting In an energy conversion efficiency of $20.2\%\;on\;0.50{\Omega}cm$ FZ wafer. Tapered contact structure has been applied to large area solar cells with $6.7\times6.7cm^2$ in order to reduce power losses by the front contact The tapered front metal contact Is easily formed by the electroplating technique producing $45cm^2$ solar cells with an efficiency of $21.4\%$ on $21.4\%\;on\;2{\Omega}cm$ FZ wafer.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1563-1565
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• 2008

Hydrophobic plastic plates employing nano surface features are injection molded using thermoplastic materials. A variotherm molding process is devised for filling the nano pores and releasing the molded nano features from the master. The size of the molded nano surface features are about 100nm in diameter and 200nm in height. The size of the molded plate is about 30mm x 30mm and the thickness is 1mm. As molding materials, Polypropylene, PMMA, COC and PC are employed, which are all typical commodity thermoplastic materials. The mold temperature(stamper temperature) is investigated as a major processing parameter for molding high aspect ratio nano surface features. Almost fully molded nano features are fabricated above a certain level of mold temperature depends on the employing material. The contact angles on the injection molded plates are measured to estimate the hydrophobicity and found to have higher contact angle up to 180% compared to the blank plate with no surface features.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.12-17
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• 2003

본 연구에서는 MICP Etching system 을 이용한 Via contact 및 Deep contact hole etch process 특성을 연구하였다. Langmuir probe 를 이용한 MICP source 의 Plasma density & electron temperature 측정하였고 탄소와 플로우르를 포함하는 혼합 Plasma 를 형성하여 RF frequency, wall temperature, chamber gap, gas chemistry 등의 변화에 따른 식각 특성을 조사하였다. Plasma density 는 1000w 에서 $10^{11}$/$cm^3$ 이상의 high density plasma와 uniform plasma 형성을 확인하였고 $CH_{2}F_{2}$와 CO의 적절한 혼합비를 이용하여 Oxide to PR 선택비가 10 이상인 고선택비 조건을 확보하였다. 고선택비 형성에 따라 Polymer 형성이 많이 되었고 이를 개선하기 위하여 반응 챔버의 온도 조절을 통하여 Polymer 증착 방지에 효과적인 것을 확인하였다. MICP source를 이용하여 탄소와 플로우르의 혼합 가스와 식각 챔버의 온도 조절에 의한 선택비 증가를 확보하여 High Aspect Ratio Contact Hole Etch 가능성을 확보하였다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2002.02a
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• pp.274-284
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• 2002

Deep drawing process for rectangular drawn section is different with that for axisymmetric circular one. Therefore deep drawing process for rectangular drawn section requires several intermediate steps to generate the final configuration without any significant defect. In this study, finite element analysis for multi-stage deep drawing process for high precision rectangular cases is carried out especially for an extreme aspect ratio. The analysis is performed using rigid-plastic finite element method with an explicit time integration scheme of the commercial program, LS-DYNA3D. The sheet blank is modeled using eight-node continuum brick elements. The results of analysis show that the irregular contact condition between blank and die affects the occurrence of failure, and the difference of aspect ratio in the drawn section leads to non-uniform metal flow, which may cause failure. A series of experiments for multi-stage deep drawing process for the rectangular cases are conducted, and the deformation configuration and the thickness distribution of the drawn rectangular cases are investigated by comparing with the results of the numerical analysis. The numerical analysis with an explicit time integration scheme shows good agreement with the experimental observation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.2-244.2
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• 2013

Contact Pattern을 Plasma Etching을 통해 Pattering 공정을 진행함에 있어서 Plasma 내에 존재하는 High Energy Ion 들의 Bombardment 에 의해, Contact Bottom 의 Silicon Lattice Atom 들은 Physical 한 Damage를 받아 Electron 의 흐름을 방해하게 되어, Resistance를 증가시키게 된다. 또한 Etchant 로 사용되는 Fluorine 과 Chlorine Atom 들은, Contact Bottom 에 Contamination 으로 작용하게 되어, 후속 Contact 공정을 진행하면서 증착되는 Ti 나 Co Layer 와 Si 이 반응하는 것을 방해하여 Ohmic Contact을 형성하기 위한 Silicide Layer를 형성하지 못하도록 만든다. High Aspect Ratio Contact (HARC) Etching 을 진행하면서 Contact Profile을 Vertical 하게 형성하기 위하여 Bias Power를 증가하여 사용하게 되는데, 이로부터 Contact Bottom에서 발생하는 Etchant 로 인한 Damage 는 더욱 더 증가하게 된다. 이 Damage Layer를 추가적인 Secondary Damage 없이 제거하기 위하여 본 연구에서는 원자층 식각방법(Atomic Layer Etching Technique)을 사용하였다. 실험에 사용된 원자층 식각방법을 이용하여, Damage 가 발생한 Si Layer를 Secondary Damage 없이 효과적으로 Control 하여 제거할 수 있음을 확인하였으며, 30 nm Deep Contact Bottom 에서 Damage 가 제거될 수 있음을 확인하였다. XPS 와 Depth SIMS Data를 이용하여 상기 실험 결과를 확인하였으며, SEM Profile 분석을 통하여, Damage 제거 결과 및 Profile 변화 여부를 확인하였으며, 4 Point Prove 결과를 통하여 결과적으로 Resistance 가 개선되는 결과를 얻을 수 있었다.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.9
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• pp.1078-1085
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• 2011

Prediction of a minimum crack size for growth, which is defined as a crack size that grows fast enough to keep ahead of its removal by contact wear and periodic grinding, is the most demanding work to prevent rail from fatigue failure and develop cost effective railway maintenance strategy In this study, we investigated the wheel load increment due to a rail defect during a train ran over it, and its effect on the minimum crack size for growth. For this purpose, we developed simulation software based on the Fletcher and Kapoor's "2.5D" model and measured wheel load increment during a train passed over a defect. A maximum contact pressure and contact patch size were calculated by 3D FEM and crack growth analyses were performed by varying two of dominant contact contributors; surface friction coefficient(0.1, 0.2, 0.3 and 0.4) and crack aspect ratio. The minimum crack sizes for growth were calculated from 0.29 to 1.44mm depending on the contact conditions. They were decreasing with increasing surface friction coefficient and decreasing with crack aspect ratio(a/b).

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.118-126
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• 1998

A study to improve filling of semiconductor contact holes by enhancement of the directionality of the source beams has been undertaken. The collimation of source beams was improved by the ionized cluster beam deposition technique with modification of the cell geometry. The collimation tested with neutral beam was excellent. But, the Cu flims were grown in a columnar mode due to the lack of surface mobilit of the impinged clusters. A shadow effect also caused cleavage and consequent discontinuity at the steos as films grow. By applying acceleration voltage, the columnar growth in a contact hole of 0.5 $\mu$m diameter and 1 $\mu$m height disappeared and considerable coverage at the side wall of the contacts as well as perfect bottom coverage were observed. These are all due to the assistants of the accelerated ionized clusters with high kinetic energy. Thus we demonstrated that the ICB deposition technique can be used to completely fill sub-half-micron contact holes with high aspect ratio.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.272-272
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• 2009

Screen-printing metal contact is typically applied to the solar cells for mass production. And metal paste is used widely for rear contact formation of silicon solar cells. However, Screen-printing solar cell metal paste contact has low aspect ratio, low accuracy, high resistivity, hard control of unclean process. In this paper is to develop resistivity of rear contact for silicon solar cells applications. 4-point prove result, This resistivity of rear contact by Al evaporation was measured about $3.56{\times}10^6{\Omega}{\cdot}cm$ less than screen printed solar cell about $52.6{\times}10^6{\Omega}{\cdot}cm$.