• 암석학회지
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• 제3권1호
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• pp.34-40
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• 1994

High pressure X-ray diffraction study was carried out on a graphite to investigate its compressibility as well as any possible phase transition to the hexagonal diamond structure at room temperature. Energy dispersive X-ray diffraction method was introduced using a Mao-Bell type diamond anvil cell with Synchrotron Radiation. Polycrystalline sodium chloride was compressed together with graphite for the high pressure determinations. Because of the poor resolution of the X-ray diffraction pattern of graphite, its compressibility was estimated to be almost same as that of NaCl by graphite (002) X-ray diffraction peak only. An observation of any new peak from a possible hexagonal diamond phase seems very unplausible for its definite identification based on the present data. Alternative approaches such as an Wiggler Radiation source as well as a Large Volume high pressure apparatus will be necessary for the detailed studies on a graphite in future.

• 암석학회지
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• 제6권2호
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• pp.88-95
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• 1997

High pressure X-ray diffraction study was carried out on a polycrystalline graphite to investigate the phase transition(s) at room temperature. Energy dispersive X-ray diffraction method was employed using a Mao-Bell type diamond anvil cell with an Wiggler synchrotron Radiation at the National Synchrotron Light Source. Sodium chloride power was used as the internal pressure sensor for the high pressure determinations as well as the pressure medium for quasihydrostatic pressure environment. Graphite transforms into a hexagonal didose not agree with the previously reported observations and this phase persists when pressure is released down to 0.1 MPa. This result dose not agree with the previously reported observations and this discrepancy would be due to the kinetics in phase transition as well as the uniaxially oriented pressure field in the diamond anvil cell.

• 한국광물학회지
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• 제9권1호
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• pp.35-42
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• 1996

Polycrystalline ZrH2 in tetragonal crystal system has been compressed in a modified Bassett-type diamond anvil cell up to 36.0 GPa at room temperature. X-ray diffraction data did not indicate any phase transitions at the present pressure range. The pressure dependence of the a-axis, c-axis, c/a and molar volume of ZrH2 was determined at pressures up to 36.0 GPa. Assuming the pressure derivative of the bulk modulus (K0') to be 4.11 from an ultrasonic value on Zr, bulk modulus (K0) was determined to be 160Gpa by fitting the pressure-volume data to the Birch-Murnaghan equation of state. Same sample was heated at $500^{\circ}C$ at the pressure of 9.8 GPa in a modified Sung-type diamond anvil cell. Unloaded and quenched sample revealed that the original tetragonal structure transforms into a hexagonal structured phase with a zero-pressure molar volume change of ~115.5%.

• 암석학회지
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• 제5권2호
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• pp.129-134
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• 1996

피스톤 실린더와 DAC 및 방사광을 이용하여 비정질의 탄질물에서 흑연으로, 흑연에서 다이아몬드로의 상변이의 가능성이 연구되었다. 속성작용이나 낮은 변성도의 흑연생성과정을 피스톤 실린더를 사용하여 0.7 Gpa와 250-$360^{\circ}C$의 환경하에서 실시되었으며 초고압 실험은 Mao-Bell형의 DAC와 EDXRD 및 방사광 가속기를사용하여 상온에서 최고압력 39.6Gpa까지 실시되었다. $Li_2CO_3$를 촉매로 사용한 피스톤 실린더 실험에서는 온도변화에 따라 TGD가 9에서 53으로 누진적으로 변화하는 무질서흑연을 얻었으며 이로부터 0.7Gpa에서 흑연화 온도는 $270^{\circ}C$와 $300^{\circ}C$사이임을 알수 있다. 흑연의 초고압 실험에서는 여러개의 새로운 XRD피크가 관찰되며 이들중에는 육방 다이아몬드의 것으로 보이는 것들로 있으리라 사료되나 이를 단정하기에는 보다 구체적인 실험연구가 필요하다. 또한 다른 종류의 고압 실험기기나 특수한 X선을 이용하여 여러 종료의 흑연시료를 대상으로한 연구가 요구된다.

• Applied Microscopy
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• 제26권1호
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• pp.95-104
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• 1996

A comprehensive methodology to characterize the interfacial reaction products of $SiC_p/2024$ Al composites is introduced on the basis of the experimental results obtained using XRD, SEM and TEM. XRD performed on the electrochemically extracted $SiC_p$ and bulk $SiC_p/2024$ Al composite have shown that the interfacial reaction products consist of $Al_{4}C_3$ having hexagonal crystallographic structure, pure eutectic Si having diamond cubic crystallographic structure, and $CuAl_2$, having tetragonal crystalloraphic structure, respectively. According to the images observed by SEM, $Al_{4}C_3$, which has been reported to have needle shape, has a hexagonal platelet-shape and eutectic Si is found to have a dendritic shape. In addition eutectic $CuAl_2$, was observed to form near interface and/or along the grain boundaries. In order to confirm the results obtained by XRD, the primitive cell volume and reciprocal lattice height of such interfacial reaction products were calculated using the data obtained from convergent beam electron diffraction (CBED) patterns, and then compared with theoretical values.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.