• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Tribology and Lubricants
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• v.37 no.4
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• pp.125-128
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• 2021

A means of enhancing the performance of triboelectric nanogenerators (TENGs) is increasing the differences in work functions between contacting materials. Hexagonal boron nitride (h-BN) exhibits excellent mechanical properties and high chemical stability as well as a high work function. As a result, engineers in the field of energy harvesting have envisioned using h-BN in the electrification layer in TENGs. For the industrial application of h-BN in TENGs, large-scale production is necessary, and h-BN is generally exfoliated and dispersed in various solvents. In this study, we evaluate the performance of a TENG with h-BN nanoflakes in the polyimide (PI) layer. To synthesize a PI composite containing h-BN nanoflakes, h-BN powders are exfoliated and dispersed in poly(amic acid) (PAA), which is the precursor of PI. Then, h-BN dispersion is spin-coated onto the PI film and cured for 2 h under 300℃. This composite material can then be used for the electrification layer in TENGs. Below the electrification layer, an aluminum foil is placed and used as an electrode. When the contact and separation processes with polyethylene terephthalate are repeated, the fabricated TENG shows a maximum power density of 190.8 W/m². This study shows that h-BN is a promising material for enhancing the performance of the electrification layer in TENGs.

• Composites Research
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• v.34 no.1
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• pp.63-69
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• 2021

In order to develop an integrated heat dissipating material and gas barrier film for electronics, new polymer was designed and synthesized for preparing composites containing hexagonal boron nitride (hBN) filler. Depending on the size and content of the hBN filler, both thermal conductivity and oxygen transmission rate can be adjusted. The composite achieved a high thermal conductivity of 28.0 W·m-1·K-1 at most and the oxygen transmission rate was decreased by 62% compared to that of the filler free matrix. Effective filler aspect ratios could be estimated by comparing thermal conductivity and oxygen transmission rate with values predicted by theoretical models. Discrepancy on the aspect ratios extracted from thermal conductivity and oxygen transmission rate comparisons was also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.36-41
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• 2017

In this paper, $Si_3N_4/hBN$ ceramics with various hexagonal boron nitride (hBN) contents (0, 10, 20, or 30 wt%) were fabricated via spark plasma sintering (SPS) at $1500^{\circ}C$, 50MPa, and 10m holding time. The material properties such as the relative density, hardness, and fracture toughness were systematically evaluated according to the hBN content in the $Si_3N_4/hBN$ ceramics. The results show that relative density, hardness, and fracture toughness continuously decreased as the hBN content increased. In addition, peak-step drilling (with tool diameter $500{\mu}m$) was performed to observe the effects of hBN content in micro-hole shape and cutting force. A machined hole diameter of $510{\mu}m$ (entrance) and stable cutting force were obtained at 30 wt% hBN content. Consequently, $Si_3N_4/30wt%$ hBN ceramic is a feasible material upon which to apply semi-conductor components, and this study is very meaningful for determining correlations between material properties and machining performance.

• Composites Research
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• v.33 no.3
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• pp.153-160
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• 2020

In this paper, hexagonal boron nitride (h-BN) particles were added between the sheets of prepreg, and the effect of on many properties of BN-embedded carbon fiber reinforced plastics was investigated. The amount of BN particles which corresponds with 0 to 15 wt% of total resin weight was used as an additive material. The tensile strength and the inter-laminar shear strength of BN-embedded CFRP samples were improved by maximally 13.6%, and 6.7%, respectively. The tendency changes of thermal, electrical conductivities and the morphology of cross-section of CFRPs were also observed. This study suggests the possibility of controlling the characteristics of carbon fiber-BN-epoxy composites to use for aerospace applications.

• Journal of Powder Materials
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• v.25 no.2
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• pp.120-125
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• 2018

Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.