• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.262-262
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• 2003

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.89-90
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• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.95-96
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• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.

• Ceramist
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• v.21 no.2
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• pp.19-28
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• 2018

Coulomb drag is an effective probe into interlayer interaction between two electron systems in close proximity. For example, it can be a measure of momentum, phonon, or energy transfer between the two systems. The most exotic phenomenon would be when bosonic indirect excitons (electron-hole pairs) are formed in double layer systems where electrons and holes are populated in the opposite layers. In this review, we present various drag phenomena observed in different double layer electron systems, e.g. GaAs/AlGaAs heterostructures and two-dimensional material based heterostructures. In particular, we address the different behavior of Coulomb drag depending on its origin such as momentum or energy transfer between the two layers and exciton condensation. We also discuss why it is difficult to achieve electron-hole pairs in double layer electron systems in equilibrium.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.76-77
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.136-136
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.31-32
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.214-214
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.80.4-80
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• 1998